Overview
The PMBFJ620,115 is a dual N-channel field-effect transistor (FET) manufactured by NXP USA Inc. This component is designed for a variety of applications requiring low power consumption and high reliability. The transistor is packaged in a 6-lead TSSOP (Thin Shrink Small Outline Package) and is suitable for use in a range of electronic circuits, including amplifiers, switches, and voltage regulators.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | - | - | - | ±25 | V |
| VGSO (Gate-Source Voltage) | Open drain | - | - | -25 | V |
| VGDO (Gate-Drain Voltage) | Open source | - | - | -25 | V |
| IG (Forward Gate Current) | - | - | - | 50 | mA |
| Ptot (Total Power Dissipation) | Ts ≤ 90°C | - | - | 190 | mW |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Junction Temperature) | - | - | - | 150 | °C |
| IDSS (Drain-Source Leakage Current) | VDS = 10 V; VGS = 0 V | 24 | - | - | μA |
| gfs (Common Source Transfer Conductance) | VDS = 10 V; ID = 10 mA; f = 100 MHz | - | 13 | - | mS |
Key Features
- Dual N-channel field-effect transistor in a single package, enhancing circuit simplicity and reducing component count.
- Low power dissipation of up to 190 mW, making it suitable for low-power applications.
- High gate-source breakdown voltage of up to -25 V, providing robust protection against voltage spikes.
- Compact 6-lead TSSOP package, ideal for space-constrained designs.
- Wide operating temperature range from -65°C to 150°C, ensuring reliability in various environmental conditions.
Applications
The PMBFJ620,115 is versatile and can be used in a variety of electronic circuits, including:
- Amplifiers: Due to its high transfer conductance, it is suitable for amplifier circuits.
- Switches: Its low power consumption and high switching speed make it ideal for switching applications.
- Voltage Regulators: It can be used in voltage regulator circuits to provide stable output voltages.
- Audio and RF Circuits: Its low noise characteristics make it suitable for audio and RF applications.
Q & A
- What is the PMBFJ620,115?
The PMBFJ620,115 is a dual N-channel field-effect transistor manufactured by NXP USA Inc. - What is the package type of the PMBFJ620,115?
The PMBFJ620,115 is packaged in a 6-lead TSSOP. - What is the maximum drain-source voltage for the PMBFJ620,115?
The maximum drain-source voltage is ±25 V. - What is the total power dissipation of the PMBFJ620,115?
The total power dissipation is up to 190 mW. - What is the storage temperature range for the PMBFJ620,115?
The storage temperature range is from -65°C to 150°C. - What are some common applications of the PMBFJ620,115?
It is commonly used in amplifiers, switches, voltage regulators, and audio/RF circuits. - What is the gate-source breakdown voltage of the PMBFJ620,115?
The gate-source breakdown voltage is up to -25 V. - What is the common source transfer conductance of the PMBFJ620,115?
The common source transfer conductance is typically 13 mS at VDS = 10 V and ID = 10 mA. - Is the PMBFJ620,115 suitable for high-temperature applications?
Yes, it operates reliably in temperatures up to 150°C. - Where can I purchase the PMBFJ620,115?
The PMBFJ620,115 can be purchased from various electronic component suppliers such as Digi-Key, Mouser, and X-ON Electronics.
