PMBFJ620,115
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NXP USA Inc. PMBFJ620,115

Manufacturer No:
PMBFJ620,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET 2N-CH 25V 0.19W 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBFJ620,115 is a dual N-channel field-effect transistor (FET) manufactured by NXP USA Inc. This component is designed for a variety of applications requiring low power consumption and high reliability. The transistor is packaged in a 6-lead TSSOP (Thin Shrink Small Outline Package) and is suitable for use in a range of electronic circuits, including amplifiers, switches, and voltage regulators.

Key Specifications

ParameterConditionsMinTypMaxUnit
VDS (Drain-Source Voltage)---±25V
VGSO (Gate-Source Voltage)Open drain---25V
VGDO (Gate-Drain Voltage)Open source---25V
IG (Forward Gate Current)---50mA
Ptot (Total Power Dissipation)Ts ≤ 90°C--190mW
Tstg (Storage Temperature)--65-150°C
Tj (Junction Temperature)---150°C
IDSS (Drain-Source Leakage Current)VDS = 10 V; VGS = 0 V24--μA
gfs (Common Source Transfer Conductance)VDS = 10 V; ID = 10 mA; f = 100 MHz-13-mS

Key Features

  • Dual N-channel field-effect transistor in a single package, enhancing circuit simplicity and reducing component count.
  • Low power dissipation of up to 190 mW, making it suitable for low-power applications.
  • High gate-source breakdown voltage of up to -25 V, providing robust protection against voltage spikes.
  • Compact 6-lead TSSOP package, ideal for space-constrained designs.
  • Wide operating temperature range from -65°C to 150°C, ensuring reliability in various environmental conditions.

Applications

The PMBFJ620,115 is versatile and can be used in a variety of electronic circuits, including:

  • Amplifiers: Due to its high transfer conductance, it is suitable for amplifier circuits.
  • Switches: Its low power consumption and high switching speed make it ideal for switching applications.
  • Voltage Regulators: It can be used in voltage regulator circuits to provide stable output voltages.
  • Audio and RF Circuits: Its low noise characteristics make it suitable for audio and RF applications.

Q & A

  1. What is the PMBFJ620,115?
    The PMBFJ620,115 is a dual N-channel field-effect transistor manufactured by NXP USA Inc.
  2. What is the package type of the PMBFJ620,115?
    The PMBFJ620,115 is packaged in a 6-lead TSSOP.
  3. What is the maximum drain-source voltage for the PMBFJ620,115?
    The maximum drain-source voltage is ±25 V.
  4. What is the total power dissipation of the PMBFJ620,115?
    The total power dissipation is up to 190 mW.
  5. What is the storage temperature range for the PMBFJ620,115?
    The storage temperature range is from -65°C to 150°C.
  6. What are some common applications of the PMBFJ620,115?
    It is commonly used in amplifiers, switches, voltage regulators, and audio/RF circuits.
  7. What is the gate-source breakdown voltage of the PMBFJ620,115?
    The gate-source breakdown voltage is up to -25 V.
  8. What is the common source transfer conductance of the PMBFJ620,115?
    The common source transfer conductance is typically 13 mS at VDS = 10 V and ID = 10 mA.
  9. Is the PMBFJ620,115 suitable for high-temperature applications?
    Yes, it operates reliably in temperatures up to 150°C.
  10. Where can I purchase the PMBFJ620,115?
    The PMBFJ620,115 can be purchased from various electronic component suppliers such as Digi-Key, Mouser, and X-ON Electronics.

Product Attributes

FET Type:2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):24 mA @ 10 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:2 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):50 Ohms
Power - Max:190 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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