PMBFJ113,215
  • Share:

NXP USA Inc. PMBFJ113,215

Manufacturer No:
PMBFJ113,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 40V 0.3W SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBFJ113,215 is an N-channel junction Field-Effect Transistor (JFET) manufactured by NXP USA Inc. This device is part of the PMBFJ113 series and is designed for various electronic applications requiring low noise and high input impedance. The PMBFJ113,215 is packaged in a SOT-23 (TO-236AB) case, making it suitable for surface mount applications.

Key Specifications

SymbolParameterConditionsMinTypMaxUnit
IGSSGate-source leakage currentVGS = -15 V; VDS = 0 V---1nA
IDSSDrain-source leakage currentVGS = 0 V; VDS = 15 V2--mA
V(BR)GSSGate-source breakdown voltageIG = -1 μA; VDS = 0 V-40--V
VGSoffGate-source cut-off voltageID = 1 μA; VDS = 5 V-3--0.5V
RDSonDrain-source on-state resistanceVGS = 0 V; VDS = 0.1 V--100Ω
CissInput capacitanceVDS = 0 V; VGS = -10 V; f = 1 MHz-6-pF
CrssFeedback capacitance--3-pF
trRise time--6-ns
tonTurn-on time--13-ns
tfFall time--15-ns
toffTurn-off time--35-ns

Key Features

  • High Input Impedance: The PMBFJ113,215 has high input impedance, making it suitable for applications requiring minimal input current.
  • Low Noise Performance: This JFET offers better noise performance compared to MOSFETs, especially in analog signal amplification.
  • Normally On Operation: The device is normally on when no voltage is applied to the gate, which is beneficial in certain circuit designs.
  • Surface Mount Package: The SOT-23 (TO-236AB) package is convenient for surface mount applications, enhancing board space efficiency.
  • Low Power Consumption: With a maximum power dissipation of 250 mW, it is suitable for low-power electronic circuits.

Applications

The PMBFJ113,215 is generally used in low current applications and analog signal amplification. Some common applications include:

  • Audio Amplifiers: Due to its low noise characteristics, it is often used in audio amplifiers and other audio equipment.
  • Voltage Regulators: It can be used in voltage regulator circuits where high input impedance and low noise are required.
  • Switching Circuits: The device can be used in switching circuits where its normally on operation is advantageous.
  • Measurement Instruments: It is suitable for use in measurement instruments that require high input impedance and low noise.

Q & A

  1. What is the package type of the PMBFJ113,215?
    The PMBFJ113,215 is packaged in a SOT-23 (TO-236AB) case.
  2. What is the maximum drain-source voltage (Vdss) of the PMBFJ113,215?
    The maximum drain-source voltage (Vdss) is 25 V.
  3. What is the typical input capacitance (Ciss) of the PMBFJ113,215?
    The typical input capacitance (Ciss) is 6 pF at VDS = 0 V and VGS = -10 V.
  4. What is the gate-source cut-off voltage (VGSoff) of the PMBFJ113,215?
    The gate-source cut-off voltage (VGSoff) ranges from -3 V to -0.5 V.
  5. Is the PMBFJ113,215 suitable for high current applications?
    No, the PMBFJ113,215 is generally used for low current applications.
  6. What are the typical switching times for the PMBFJ113,215?
    The rise time (tr) is typically 6 ns, the turn-on time (ton) is typically 13 ns, the fall time (tf) is typically 15 ns, and the turn-off time (toff) is typically 35 ns.
  7. Is the PMBFJ113,215 RoHS compliant?
    Yes, the PMBFJ113,215 is lead-free and RoHS compliant.
  8. What is the maximum operating temperature of the PMBFJ113,215?
    The maximum operating temperature (TJ) is 150°C.
  9. What are the advantages of using a JFET over a MOSFET?
    JFETs have better noise performance and higher input impedance compared to MOSFETs, making them suitable for analog signal amplification and low noise applications.
  10. Is the PMBFJ113,215 still in production?
    No, the PMBFJ113,215 is obsolete and no longer manufactured by NXP USA Inc.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):40 V
Drain to Source Voltage (Vdss):40 V
Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:6pF @ 10V (VGS)
Resistance - RDS(On):100 Ohms
Power - Max:300 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
593

Please send RFQ , we will respond immediately.

Same Series
PMBFJ111,215
PMBFJ111,215
JFET N-CH 40V 0.3W SOT23
PMBFJ112,215
PMBFJ112,215
JFET N-CH 40V 0.3W SOT23
SP1812R-272K
SP1812R-272K
FIXED IND 2.7UH 1.11A 160MOHM SM
SP1812R-332K
SP1812R-332K
FIXED IND 3.3UH 1.06A 180MOHM SM

Similar Products

Part Number PMBFJ113,215 PMBFJ110,215 PMBFJ111,215 PMBFJ112,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 40 V 25 V 40 V 40 V
Drain to Source Voltage (Vdss) 40 V 25 V 40 V 40 V
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V 10 mA @ 15 V 20 mA @ 15 V 5 mA @ 15 V
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 3 V @ 1 µA 4 V @ 1 µA 10 V @ 1 µA 5 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V (VGS) 30pF @ 10V (VGS) 6pF @ 10V (VGS) 6pF @ 10V (VGS)
Resistance - RDS(On) 100 Ohms 18 Ohms 30 Ohms 50 Ohms
Power - Max 300 mW 250 mW 300 mW 300 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MMBFJ177LT1G
MMBFJ177LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
J112-D74Z
J112-D74Z
onsemi
JFET N-CH 35V 625MW TO92
BF510
BF510
NXP USA Inc.
RF MOSFET N-CHANNEL JFET 20V 100
MMBFJ113
MMBFJ113
onsemi
JFET N-CH 35V 350MW SOT23
MMBFJ175
MMBFJ175
Fairchild Semiconductor
P-CHANNEL JFET, TO-236AB
PMBFJ177,215
PMBFJ177,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
PMBFJ109,215
PMBFJ109,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBF4393,215
PMBF4393,215
NXP USA Inc.
JFET N-CH 40V 250MW SOT23
MMBF4393LT1
MMBF4393LT1
onsemi
JFET N-CH 30V 0.225W SOT23
MMBFJ175LT1
MMBFJ175LT1
onsemi
MOSFET SS P-CHAN 25V SOT23
MMBFJ309LT1
MMBFJ309LT1
onsemi
MOSFET SS N-CHAN 25V SOT23

Related Product By Brand

PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
MKE04Z128VLH4
MKE04Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
FS32K116LAT0MLFR
FS32K116LAT0MLFR
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
TLVH431CDBZR,215
TLVH431CDBZR,215
NXP USA Inc.
IC VREF SHUNT ADJ 1.5% TO236AB
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN