PMBFJ113,215
  • Share:

NXP USA Inc. PMBFJ113,215

Manufacturer No:
PMBFJ113,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 40V 0.3W SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBFJ113,215 is an N-channel junction Field-Effect Transistor (JFET) manufactured by NXP USA Inc. This device is part of the PMBFJ113 series and is designed for various electronic applications requiring low noise and high input impedance. The PMBFJ113,215 is packaged in a SOT-23 (TO-236AB) case, making it suitable for surface mount applications.

Key Specifications

SymbolParameterConditionsMinTypMaxUnit
IGSSGate-source leakage currentVGS = -15 V; VDS = 0 V---1nA
IDSSDrain-source leakage currentVGS = 0 V; VDS = 15 V2--mA
V(BR)GSSGate-source breakdown voltageIG = -1 μA; VDS = 0 V-40--V
VGSoffGate-source cut-off voltageID = 1 μA; VDS = 5 V-3--0.5V
RDSonDrain-source on-state resistanceVGS = 0 V; VDS = 0.1 V--100Ω
CissInput capacitanceVDS = 0 V; VGS = -10 V; f = 1 MHz-6-pF
CrssFeedback capacitance--3-pF
trRise time--6-ns
tonTurn-on time--13-ns
tfFall time--15-ns
toffTurn-off time--35-ns

Key Features

  • High Input Impedance: The PMBFJ113,215 has high input impedance, making it suitable for applications requiring minimal input current.
  • Low Noise Performance: This JFET offers better noise performance compared to MOSFETs, especially in analog signal amplification.
  • Normally On Operation: The device is normally on when no voltage is applied to the gate, which is beneficial in certain circuit designs.
  • Surface Mount Package: The SOT-23 (TO-236AB) package is convenient for surface mount applications, enhancing board space efficiency.
  • Low Power Consumption: With a maximum power dissipation of 250 mW, it is suitable for low-power electronic circuits.

Applications

The PMBFJ113,215 is generally used in low current applications and analog signal amplification. Some common applications include:

  • Audio Amplifiers: Due to its low noise characteristics, it is often used in audio amplifiers and other audio equipment.
  • Voltage Regulators: It can be used in voltage regulator circuits where high input impedance and low noise are required.
  • Switching Circuits: The device can be used in switching circuits where its normally on operation is advantageous.
  • Measurement Instruments: It is suitable for use in measurement instruments that require high input impedance and low noise.

Q & A

  1. What is the package type of the PMBFJ113,215?
    The PMBFJ113,215 is packaged in a SOT-23 (TO-236AB) case.
  2. What is the maximum drain-source voltage (Vdss) of the PMBFJ113,215?
    The maximum drain-source voltage (Vdss) is 25 V.
  3. What is the typical input capacitance (Ciss) of the PMBFJ113,215?
    The typical input capacitance (Ciss) is 6 pF at VDS = 0 V and VGS = -10 V.
  4. What is the gate-source cut-off voltage (VGSoff) of the PMBFJ113,215?
    The gate-source cut-off voltage (VGSoff) ranges from -3 V to -0.5 V.
  5. Is the PMBFJ113,215 suitable for high current applications?
    No, the PMBFJ113,215 is generally used for low current applications.
  6. What are the typical switching times for the PMBFJ113,215?
    The rise time (tr) is typically 6 ns, the turn-on time (ton) is typically 13 ns, the fall time (tf) is typically 15 ns, and the turn-off time (toff) is typically 35 ns.
  7. Is the PMBFJ113,215 RoHS compliant?
    Yes, the PMBFJ113,215 is lead-free and RoHS compliant.
  8. What is the maximum operating temperature of the PMBFJ113,215?
    The maximum operating temperature (TJ) is 150°C.
  9. What are the advantages of using a JFET over a MOSFET?
    JFETs have better noise performance and higher input impedance compared to MOSFETs, making them suitable for analog signal amplification and low noise applications.
  10. Is the PMBFJ113,215 still in production?
    No, the PMBFJ113,215 is obsolete and no longer manufactured by NXP USA Inc.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):40 V
Drain to Source Voltage (Vdss):40 V
Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:6pF @ 10V (VGS)
Resistance - RDS(On):100 Ohms
Power - Max:300 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
593

Please send RFQ , we will respond immediately.

Same Series
PMBFJ111,215
PMBFJ111,215
JFET N-CH 40V 0.3W SOT23
PMBFJ112,215
PMBFJ112,215
JFET N-CH 40V 0.3W SOT23
SP1812R-272K
SP1812R-272K
FIXED IND 2.7UH 1.11A 160MOHM SM
SP1812R-332K
SP1812R-332K
FIXED IND 3.3UH 1.06A 180MOHM SM

Similar Products

Part Number PMBFJ113,215 PMBFJ110,215 PMBFJ111,215 PMBFJ112,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 40 V 25 V 40 V 40 V
Drain to Source Voltage (Vdss) 40 V 25 V 40 V 40 V
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V 10 mA @ 15 V 20 mA @ 15 V 5 mA @ 15 V
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 3 V @ 1 µA 4 V @ 1 µA 10 V @ 1 µA 5 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V (VGS) 30pF @ 10V (VGS) 6pF @ 10V (VGS) 6pF @ 10V (VGS)
Resistance - RDS(On) 100 Ohms 18 Ohms 30 Ohms 50 Ohms
Power - Max 300 mW 250 mW 300 mW 300 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MMBFJ177LT1G
MMBFJ177LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
J112-D74Z
J112-D74Z
onsemi
JFET N-CH 35V 625MW TO92
BF510
BF510
NXP USA Inc.
RF MOSFET N-CHANNEL JFET 20V 100
MMBF4392LT1G
MMBF4392LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBFJ270
MMBFJ270
onsemi
JFET P-CH 30V 0.225W SOT23
SMMBFJ177LT1G
SMMBFJ177LT1G
onsemi
TRANS JFET P-CH SOT23
MMBFU310LT1G
MMBFU310LT1G
onsemi
JFET N-CH 25V 0.225W SOT23-3
MMBFJ110
MMBFJ110
onsemi
JFET N-CH 25V 0.46W 3-SSOT
MMBF5457
MMBF5457
onsemi
JFET N-CH 25V 350MW SOT23
BFR30,215
BFR30,215
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
MMBF5457LT1
MMBF5457LT1
onsemi
MOSFET SS N-CHAN 25V SOT23

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
SC16C554DBIA68,518
SC16C554DBIA68,518
NXP USA Inc.
IC UART QUAD 68PLCC
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
BGU7005/Z/N2115
BGU7005/Z/N2115
NXP USA Inc.
NARROW BAND LOW POWER AMPLIFIER
SLRC40001T/OFE,112
SLRC40001T/OFE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX