MMBFJ177LT1G
  • Share:

onsemi MMBFJ177LT1G

Manufacturer No:
MMBFJ177LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET P-CH 30V 0.225W SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ177LT1G is a P-channel JFET (Junction Field-Effect Transistor) device manufactured by onsemi. This component is specifically designed for analog switching and chopper applications, offering high efficiency and extended battery life due to its low on-resistance (rDS(on)). The device is packaged in a miniature SOT-23 surface mount package, which helps in saving board space.

Key Specifications

Parameter Symbol Value Unit
Drain-Gate Voltage VDG -25 Vdc
Gate-Source Voltage VGS 25 Vdc
Drain-Source Current (Min/Max) IDSS 1500 / 20000 µA
Input Capacitance (Max) Ciss 11 pF
Reverse Transfer Capacitance (Max) Crss 5.5 pF
Package Type SOT-23 (TO-236)
Channel Polarity P-Channel

Key Features

  • Low rDS(on): Provides higher efficiency and extends battery life.
  • Miniature SOT-23 Package: Saves board space and is suitable for compact designs.
  • Analog Switching and Chopper Applications: Designed for high-performance switching and chopper circuits.
  • High Drain-Source Current Capability: Supports a wide range of current requirements with IDSS ranging from 1500 to 20000 µA.

Applications

  • Analog Switching: Ideal for applications requiring precise and efficient analog switching.
  • Chopper Circuits: Suitable for chopper applications where high efficiency and low on-resistance are critical.
  • Portable Electronics: Enhances battery life in portable electronic devices due to its low power consumption.
  • Automotive Systems: Can be used in various automotive systems requiring reliable and efficient switching.

Q & A

  1. What is the MMBFJ177LT1G used for?

    The MMBFJ177LT1G is used for analog switching and chopper applications.

  2. What is the package type of the MMBFJ177LT1G?

    The MMBFJ177LT1G is packaged in a SOT-23 (TO-236) surface mount package.

  3. What is the maximum drain-gate voltage for the MMBFJ177LT1G?

    The maximum drain-gate voltage (VDG) is -25 Vdc.

  4. What is the range of drain-source current (IDSS) for the MMBFJ177LT1G?

    The drain-source current (IDSS) ranges from 1500 to 20000 µA.

  5. Why is the low rDS(on) important for the MMBFJ177LT1G?

    The low rDS(on) provides higher efficiency and extends battery life in applications.

  6. What are some common applications of the MMBFJ177LT1G?

    Common applications include analog switching, chopper circuits, portable electronics, and automotive systems.

  7. What is the maximum gate-source voltage for the MMBFJ177LT1G?

    The maximum gate-source voltage (VGS) is 25 Vdc.

  8. What is the input capacitance (Ciss) of the MMBFJ177LT1G?

    The input capacitance (Ciss) is 11 pF maximum.

  9. Is the MMBFJ177LT1G available in Pb-free versions?

    Yes, the MMBFJ177LT1G is available in Pb-free versions.

  10. Where can I find detailed specifications and datasheets for the MMBFJ177LT1G?

    Detailed specifications and datasheets can be found on the onsemi website and other authorized distributors like LCSC and TME.

Product Attributes

FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):1.5 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V (VGS)
Resistance - RDS(On):300 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.47
1,942

Please send RFQ , we will respond immediately.

Same Series
MMBFJ177LT1G
MMBFJ177LT1G
JFET P-CH 30V 0.225W SOT23-3

Similar Products

Part Number MMBFJ177LT1G MMBFJ175LT1G MMBFJ177LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type P-Channel P-Channel -
Voltage - Breakdown (V(BR)GSS) 30 V 30 V -
Drain to Source Voltage (Vdss) - - -
Current - Drain (Idss) @ Vds (Vgs=0) 1.5 mA @ 15 V 7 mA @ 15 V -
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 800 mV @ 10 nA 3 V @ 10 nA -
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V (VGS) 11pF @ 10V (VGS) -
Resistance - RDS(On) 300 Ohms 125 Ohms -
Power - Max 225 mW 225 mW -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

MMBF4392LT1G
MMBF4392LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBF4393LT1G
MMBF4393LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBFJ111
MMBFJ111
onsemi
JFET N-CH 35V 350MW SOT23-3
MMBF4117
MMBF4117
onsemi
JFET N-CH 40V 0.225W SOT23
MMBFJ112
MMBFJ112
onsemi
JFET N-CH 35V 0.35W SOT-23
MMBF5103
MMBF5103
onsemi
JFET N-CH 40V 0.35W SOT-23
MMBFU310LT1G
MMBFU310LT1G
onsemi
JFET N-CH 25V 0.225W SOT23-3
MCH3914-7-TL-H
MCH3914-7-TL-H
onsemi
JFET N-CH 50MA 300MW SC70FL/MCPH
NSVJ2394SA3T1G
NSVJ2394SA3T1G
onsemi
IC JFET N-CH LNA SC59-3
BFR30,235
BFR30,235
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
PMBFJ177,215
PMBFJ177,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
PMBFJ174,215
PMBFJ174,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC