Overview
The MMBFJ110 is an N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi. This device is specifically designed for digital switching applications where very low on-resistance is crucial. It is sourced from onsemi's Process 58 and is a Pb-Free device, making it compliant with environmental regulations. The MMBFJ110 is packaged in a SOT-23/SUPERSOT-23, 3-lead case, which is suitable for surface mount applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | - | - |
| Drain-Gate Voltage (VDG) | 25 | V |
| Gate-Source Voltage (VGS) | -25 | V |
| Forward Gate Current (IGF) | 10 | mA |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -55 to 150 | °C |
| Total Device Dissipation (PD) | 460 | mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 270 | °C/W |
| Drain-Source On Resistance (rDS(on)) | 18 | Ω |
| Gate-Source Breakdown Voltage (VBR(GSS)) | -25 | V |
| Gate Reverse Current (IGSS) | -3.0 | nA |
Key Features
- Designed for digital switching applications with very low on-resistance.
- Pb-Free device, compliant with environmental regulations.
- Sourced from Process 58.
- Low drain-source on resistance of 18 Ω.
- High gate-source breakdown voltage of -25 V.
- Low gate reverse current of -3.0 nA.
- High junction temperature of up to 150°C.
- Surface mount SOT-23/SUPERSOT-23 package.
Applications
The MMBFJ110 is ideal for digital switching applications where low on-resistance is mandatory. It can be used in various electronic circuits such as logic gates, switches, and amplifiers. The device's low on-resistance and high breakdown voltage make it suitable for applications requiring high reliability and performance.
Q & A
- What is the MMBFJ110? The MMBFJ110 is an N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi.
- What is the primary application of the MMBFJ110? It is designed for digital switching applications where very low on-resistance is mandatory.
- What is the package type of the MMBFJ110? The MMBFJ110 is packaged in a SOT-23/SUPERSOT-23, 3-lead case.
- What is the maximum junction temperature of the MMBFJ110? The maximum junction temperature is 150°C.
- What is the total device dissipation of the MMBFJ110? The total device dissipation is 460 mW.
- What is the drain-source on resistance of the MMBFJ110? The drain-source on resistance is 18 Ω.
- Is the MMBFJ110 Pb-Free? Yes, the MMBFJ110 is a Pb-Free device.
- What is the gate-source breakdown voltage of the MMBFJ110? The gate-source breakdown voltage is -25 V.
- What is the thermal resistance, junction-to-ambient of the MMBFJ110? The thermal resistance, junction-to-ambient is 270 °C/W.
- What are the storage temperature limits for the MMBFJ110? The storage temperature range is -55 to 150 °C.
