Overview
The MMBFJ176 is a P-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is specifically designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. It is sourced from onsemi's Process 88 and is available in the SOT-23 package, making it suitable for surface mount applications.
Key Specifications
| Parameter | Conditions | Min. | Max. | Unit |
|---|---|---|---|---|
| Drain-Gate Voltage (VDG) | -30 | V | ||
| Gate-Source Voltage (VGS) | 30 | V | ||
| Forward Gate Current (IGF) | 50 | mA | ||
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 | 150 | °C | |
| Total Device Dissipation (PD) | 225 | mW | ||
| Thermal Resistance, Junction to Case (RθJC) | 125 | °C/W | ||
| Thermal Resistance, Junction to Ambient (RθJA) | 556 | °C/W | ||
| Gate-Source Breakdown Voltage (V(BR)GSS) | IG = 1.0 μA, VDS = 0 | 1.0 | 4.0 | V |
| Gate-Source Cut-Off Voltage (VGS(off)) | VDS = -15 V, ID = -10 nA | 1.0 | 4.0 | V |
| Zero-Gate Voltage Drain Current (IDSS) | VDS = -15 V, IGS = 0 | -2.0 | -25.0 | mA |
| Drain-Source On Resistance (rDS(on)) | VDS ≤ 0.1 V, VGS = 0 | 250 | Ω |
Key Features
- P-Channel JFET: Suitable for low-level analog switching applications.
- Surface Mount Package: Available in SOT-23 package, facilitating compact and efficient board design.
- Low Power Dissipation: Total device dissipation of 225 mW, making it suitable for applications where power efficiency is crucial.
- Wide Operating Temperature Range: Operating and storage junction temperature range from -55°C to 150°C.
- High Gate-Source Breakdown Voltage: Up to 4.0 V, ensuring robust performance in various circuit configurations.
- Interchangeable Source and Drain: Provides flexibility in circuit design and implementation.
Applications
- Low-Level Analog Switching: Ideal for applications requiring precise analog signal switching.
- Sample-and-Hold Circuits: Used in circuits that require holding analog signals at a specific level.
- Chopper-Stabilized Amplifiers: Enhances the stability and accuracy of amplifier circuits.
- General Purpose Amplifiers: Suitable for various amplifier configurations where low noise and high stability are required.
Q & A
- What is the MMBFJ176 used for?
The MMBFJ176 is used for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers.
- What package type does the MMBFJ176 come in?
The MMBFJ176 is available in the SOT-23 surface mount package.
- What is the maximum drain-gate voltage for the MMBFJ176?
The maximum drain-gate voltage (VDG) is -30 V.
- What is the operating temperature range for the MMBFJ176?
The operating and storage junction temperature range is from -55°C to 150°C.
- What is the total device dissipation for the MMBFJ176?
The total device dissipation (PD) is 225 mW.
- Can the source and drain of the MMBFJ176 be interchanged?
- What is the gate-source breakdown voltage for the MMBFJ176?
The gate-source breakdown voltage (V(BR)GSS) ranges from 1.0 V to 4.0 V.
- What is the typical drain-source on resistance for the MMBFJ176?
The typical drain-source on resistance (rDS(on)) is 250 Ω.
- In what types of circuits is the MMBFJ176 commonly used?
The MMBFJ176 is commonly used in sample-and-hold circuits, chopper-stabilized amplifiers, and general-purpose amplifier configurations.
- Is the MMBFJ176 suitable for high-power applications?
No, the MMBFJ176 is designed for low-power applications with a total device dissipation of 225 mW.
