Overview
The MMBFU310LT1G is an N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This component is designed to be Pb-free, halogen-free, and BFR-free, making it compliant with RoHS standards. It is packaged in the SOT-23 (TO-236AB) case style, which is a small, surface-mount package suitable for a variety of applications requiring low power consumption and high reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | Vdc |
| Gate-Source Voltage | VGS | 25 | Vdc |
| Gate Current | IG | 10 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Gate-Source Breakdown Voltage (IG = -1.0 μAdc, VDS = 0) | V(BR)GSS | -25 | Vdc |
| Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) | VGS(off) | -2.5 to -6.0 | Vdc |
| Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) | IDSS | 24 to 60 | mAdc |
| Gate-Source Forward Voltage (IG = 10 mAdc, VDS = 0) | VGS(f) | -1.0 | Vdc |
| Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) | |Yfs| | 10 to 18 | mmhos |
| Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) | |yos| | -250 | μmhos |
| Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) | Ciss | -5.0 | pF |
| Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) | Crss | -2.5 | pF |
Key Features
- Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
- Small SOT-23 (TO-236AB) package, ideal for space-constrained applications.
- N-Channel JFET with high input impedance and low noise.
- High gate-source breakdown voltage and low gate-source cutoff voltage.
- Low power consumption with a total device dissipation of 225 mW at 25°C.
- Wide junction and storage temperature range (-55°C to +150°C).
Applications
- Audio and video switching circuits.
- Low-power amplifiers and buffers.
- Voltage regulators and power management systems.
- Automotive and industrial control systems.
- Consumer electronics such as audio equipment, televisions, and radios.
Q & A
- What is the package type of the MMBFU310LT1G?
The MMBFU310LT1G is packaged in the SOT-23 (TO-236AB) case style.
- Is the MMBFU310LT1G RoHS compliant?
Yes, the MMBFU310LT1G is Pb-free, halogen-free, and BFR-free, making it RoHS compliant.
- What is the maximum drain-source voltage for the MMBFU310LT1G?
The maximum drain-source voltage (VDS) is 25 Vdc.
- What is the thermal resistance, junction-to-ambient for the MMBFU310LT1G?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.
- What are the typical applications of the MMBFU310LT1G?
Typical applications include audio and video switching circuits, low-power amplifiers, voltage regulators, automotive and industrial control systems, and consumer electronics.
- What is the gate-source breakdown voltage for the MMBFU310LT1G?
The gate-source breakdown voltage (V(BR)GSS) is -25 Vdc.
- What is the zero-gate-voltage drain current for the MMBFU310LT1G?
The zero-gate-voltage drain current (IDSS) ranges from 24 to 60 mAdc.
- What is the forward transfer admittance for the MMBFU310LT1G?
The forward transfer admittance (|Yfs|) ranges from 10 to 18 mmhos.
- What is the input capacitance for the MMBFU310LT1G?
The input capacitance (Ciss) is -5.0 pF.
- What is the junction and storage temperature range for the MMBFU310LT1G?
The junction and storage temperature range is -55°C to +150°C.
