Overview
The MMBF4392LT1G is an N-channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is designed for analog switching and chopper applications, offering a compact and reliable solution in a surface-mount SOT-23 package. It is part of onsemi's family of JFET switching transistors, known for their high performance and robust characteristics.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| FET Type | N-Channel | |
| Gate-Source Voltage (Max) | 30 | V |
| Drain Current | 25 | mA |
| Drain-to-Source Voltage (Max) | 30 | V |
| Forward Gate Current | 50 | mA |
| Package Style | SOT-23 (SC-59, TO-236) | |
| Mounting Method | Surface Mount | |
| Junction and Storage Temperature Range | -55 to +150 | °C |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | 556 | °C/W |
Key Features
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant packages available.
- High gate-source breakdown voltage (VGS = 30 V).
- Low off-state drain current.
- Compact SOT-23 surface-mount package.
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
Applications
The MMBF4392LT1G is suitable for various applications, including:
- Analog switching.
- Chopper circuits.
- Automotive systems (AEC-Q101 qualified).
- General-purpose electronic switching.
Q & A
- What is the maximum drain-to-source voltage for the MMBF4392LT1G?
The maximum drain-to-source voltage (VDS) is 30 V. - What is the package type of the MMBF4392LT1G?
The package type is SOT-23 (SC-59, TO-236). - Is the MMBF4392LT1G RoHS compliant?
Yes, the MMBF4392LT1G is RoHS compliant and available in Pb-Free packages. - What is the junction and storage temperature range for this device?
The junction and storage temperature range is -55 to +150 °C. - What are the typical applications for the MMBF4392LT1G?
The device is typically used in analog switching and chopper applications, as well as in automotive systems. - What is the maximum forward gate current for the MMBF4392LT1G?
The maximum forward gate current (IG(f)) is 50 mA. - What is the thermal resistance, junction-to-ambient, for this device?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W. - Is the MMBF4392LT1G AEC-Q101 qualified?
Yes, the MMBF4392LT1G is AEC-Q101 qualified and PPAP capable. - What is the total device dissipation on an FR-5 board at 25°C?
The total device dissipation (PD) on an FR-5 board at 25°C is 225 mW, derating above 25°C. - What is the gate-source cutoff voltage range for the MMBF4392LT1G?
The gate-source cutoff voltage (VGS(off)) range is from -2.0 to -5.0 V. - How many devices are typically packaged per reel?
Typically, 3000 devices are packaged per reel.
