Overview
The BFR30LT1G is a N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi. This component is designed for low noise and high input impedance, making it suitable for various electronic applications. It is packaged in a SOT-23-3 case, which is a small, surface-mount package ideal for space-constrained designs.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Gate Source Cutoff Voltage | VGS(OFF) | - | 5.0 | Vdc |
| Gate Source Voltage (ID = 1.0 mA, VDS = 10 Vdc) | VGS | -0.7 | -3.0 | Vdc |
| Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) | IDSS | 4.0 | 10 | mAdc |
| Forward Transconductance (ID = 1.0 mA, VDS = 10 Vdc, f = 1.0 kHz) | yfs | 1.0 | 1.5 | mmhos |
| Input Capacitance (ID = 1.0 mA, VDS = 10 Vdc, f = 1.0 MHz) | Ciss | - | 5.0 | pF |
| Reverse Transfer Capacitance (ID = 1.0 mA, VDS = 10 Vdc, f = 1.0 MHz) | Crss | - | 1.5 | pF |
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 417 | °C/W |
Key Features
- Low Noise Operation: The BFR30LT1G is designed to provide low noise figures, making it ideal for applications requiring high signal integrity.
- High Input Impedance: This JFET offers high input impedance, which is beneficial for applications where minimal signal loading is necessary.
- Small Package Size: The SOT-23-3 package is compact and suitable for space-constrained designs.
- Wide Operating Temperature Range: The component can operate over a wide temperature range from -55°C to +150°C, making it versatile for various environments.
Applications
- Audio Amplifiers: The low noise and high input impedance of the BFR30LT1G make it suitable for use in audio amplifiers and preamplifiers.
- RF Amplifiers: This JFET can be used in RF amplifiers due to its low noise figure and high gain.
- Switching Circuits: The BFR30LT1G can be used in switching circuits where low power consumption and high switching speed are required.
- Measurement Instruments: Its high input impedance and low noise characteristics make it suitable for use in measurement instruments such as voltmeters and oscilloscopes.
Q & A
- What is the package type of the BFR30LT1G?
The BFR30LT1G is packaged in a SOT-23-3 case.
- What is the typical forward transconductance of the BFR30LT1G?
The typical forward transconductance is between 1.0 and 1.5 mmhos at ID = 1.0 mA, VDS = 10 Vdc, and f = 1.0 kHz.
- What is the maximum junction temperature for the BFR30LT1G?
The maximum junction temperature is +150°C.
- What are the key applications of the BFR30LT1G?
The BFR30LT1G is commonly used in audio amplifiers, RF amplifiers, switching circuits, and measurement instruments.
- What is the thermal resistance, junction-to-ambient, of the BFR30LT1G?
The thermal resistance, junction-to-ambient, is approximately 417 °C/W.
- What is the input capacitance of the BFR30LT1G?
The input capacitance is typically up to 5.0 pF at ID = 1.0 mA, VDS = 10 Vdc, and f = 1.0 MHz.
- What is the reverse transfer capacitance of the BFR30LT1G?
The reverse transfer capacitance is typically up to 1.5 pF at ID = 1.0 mA, VDS = 10 Vdc, and f = 1.0 MHz.
- Is the BFR30LT1G lead-free?
Yes, the BFR30LT1G is available in a lead-free version.
- What is the gate source cutoff voltage of the BFR30LT1G?
The gate source cutoff voltage is up to 5.0 Vdc.
- What is the zero-gate-voltage drain current of the BFR30LT1G?
The zero-gate-voltage drain current is between 4.0 and 10 mA at VDS = 10 Vdc and VGS = 0.
