Overview
The MMBFJ202 is an N-Channel General-Purpose Amplifier produced by onsemi. This device is designed primarily for low-level audio and general-purpose applications, particularly those involving high impedance signal sources. It is sourced from process 52 and is available in a SOT-23 (TO-236) package, which is Pb-Free.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Gate Voltage (VDG) | 40 | V |
| Gate-Source Voltage (VGS) | -40 | V |
| Forward Gate Current (IGF) | 50 | mA |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to 150 | °C |
| Total Device Dissipation (PD) | 350 | mW |
| Derate Above 25°C | 2.8 | mW/°C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 357 | °C/W |
| Gate-Source Breakdown Voltage (V(BR)GSS) | -40 | V |
| Gate Reverse Current (IGSS) | -100 | pA |
| Gate-Source Cut-Off Voltage (VGS(off)) | -0.8 to -4.0 | V |
| Zero-Gate Voltage Drain Current (IDSS) | 0.9 to 4.5 | mA |
| Forward Transfer Admittance (yFS) | 1000 | μmhos |
Key Features
- Designed for low-level audio and general-purpose applications with high impedance signal sources.
- Pb-Free SOT-23 (TO-236) package.
- High gate-source breakdown voltage and low gate reverse current.
- Wide operating and storage junction temperature range (-55°C to 150°C).
- Low total device dissipation (350 mW) with a derate of 2.8 mW/°C above 25°C.
- High thermal resistance, junction-to-ambient (357 °C/W).
- Interchangeable source and drain leads.
Applications
- Low-level audio amplification.
- General-purpose amplification in high impedance signal sources.
- Small signal amplification in various electronic circuits.
- Use in audio equipment, such as pre-amplifiers and audio signal processing circuits.
Q & A
- What is the primary application of the MMBFJ202?
The MMBFJ202 is primarily designed for low-level audio and general-purpose applications with high impedance signal sources.
- What is the package type of the MMBFJ202?
The MMBFJ202 is available in a Pb-Free SOT-23 (TO-236) package.
- What is the maximum drain-gate voltage (VDG) for the MMBFJ202?
The maximum drain-gate voltage (VDG) is 40 V.
- What is the operating and storage junction temperature range for the MMBFJ202?
The operating and storage junction temperature range is -55°C to 150°C.
- What is the total device dissipation (PD) for the MMBFJ202?
The total device dissipation (PD) is 350 mW, with a derate of 2.8 mW/°C above 25°C.
- What is the thermal resistance, junction-to-ambient (RθJA), for the MMBFJ202?
The thermal resistance, junction-to-ambient (RθJA), is 357 °C/W.
- Can the source and drain leads of the MMBFJ202 be interchanged?
- What is the gate-source breakdown voltage (V(BR)GSS) for the MMBFJ202?
The gate-source breakdown voltage (V(BR)GSS) is -40 V.
- What is the forward transfer admittance (yFS) for the MMBFJ202?
The forward transfer admittance (yFS) is 1000 μmhos.
- Is the MMBFJ202 suitable for use in life support systems or medical devices?
No, the MMBFJ202 is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
