MMBFJ175LT1
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onsemi MMBFJ175LT1

Manufacturer No:
MMBFJ175LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET SS P-CHAN 25V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ175LT1 is a P-Channel Depletion Mode JFET (Junction Field-Effect Transistor) manufactured by onsemi. This device is designed for use in various electronic circuits requiring a high degree of reliability and performance. It is particularly suited for applications that demand low noise, high input impedance, and stable operation over a wide range of temperatures.

The MMBFJ175LT1 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. The device is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental regulations.

Key Specifications

Characteristic Symbol Min Max Unit
Drain-Gate Voltage VDG 25 V
Reverse Gate-Source Voltage VGS(r) -25 V
Gate-Source Breakdown Voltage V(BR)GSS 30 V
Gate Reverse Current IGSS 1.0 nA
Gate-Source Cutoff Voltage VGS(OFF) 3.0 6.0 V
Zero Gate-Voltage Drain Current IDSS 7.0 60 mA
Drain Cutoff Current ID(off) 1.0 nA
Drain Source On Resistance rDS(on) 125 Ω
Input Capacitance Ciss 11 pF
Reverse Transfer Capacitance Crss 5.5 pF
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W
Junction and Storage Temperature TJ, Tstg -55 150 °C

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • Depletion mode operation allows for use as a voltage-controlled resistor.
  • High input impedance and low noise characteristics.
  • Stable operation over a wide temperature range (-55°C to 150°C).
  • Compact SOT-23 (TO-236) package.

Applications

  • Automotive systems requiring high reliability and compliance with automotive standards.
  • Audio and video equipment where low noise and high input impedance are critical.
  • Industrial control circuits and automation systems.
  • Medical devices and equipment requiring stable and reliable operation.
  • General-purpose switching and amplification in electronic circuits.

Q & A

  1. What is the MMBFJ175LT1?

    The MMBFJ175LT1 is a P-Channel Depletion Mode JFET manufactured by onsemi.

  2. What are the key applications of the MMBFJ175LT1?

    The device is used in automotive systems, audio and video equipment, industrial control circuits, medical devices, and general-purpose switching and amplification.

  3. What is the maximum drain-gate voltage for the MMBFJ175LT1?

    The maximum drain-gate voltage is 25 V.

  4. Is the MMBFJ175LT1 RoHS compliant?
  5. What is the junction and storage temperature range for the MMBFJ175LT1?

    The junction and storage temperature range is -55°C to 150°C.

  6. What package type is the MMBFJ175LT1 available in?

    The device is available in a SOT-23 (TO-236) package.

  7. What is the typical input capacitance of the MMBFJ175LT1?

    The typical input capacitance is 11 pF.

  8. Is the MMBFJ175LT1 suitable for high-reliability applications?
  9. What is the maximum drain source on resistance of the MMBFJ175LT1?

    The maximum drain source on resistance is 125 Ω.

  10. What is the thermal resistance, junction-to-ambient, for the MMBFJ175LT1?

    The thermal resistance, junction-to-ambient, is 556 °C/W.

Product Attributes

FET Type:- 
Voltage - Breakdown (V(BR)GSS):- 
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):- 
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number MMBFJ175LT1 MMBFJ175LT1G MMBFJ177LT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type - P-Channel -
Voltage - Breakdown (V(BR)GSS) - 30 V -
Drain to Source Voltage (Vdss) - - -
Current - Drain (Idss) @ Vds (Vgs=0) - 7 mA @ 15 V -
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id - 3 V @ 10 nA -
Input Capacitance (Ciss) (Max) @ Vds - 11pF @ 10V (VGS) -
Resistance - RDS(On) - 125 Ohms -
Power - Max - 225 mW -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - SOT-23-3 (TO-236) -

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