MMBF4416LT1
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onsemi MMBF4416LT1

Manufacturer No:
MMBF4416LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET SS N-CHAN VHF 30V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF4416LT1 is a JFET (Junction Field-Effect Transistor) designed for VHF/UHF amplifier applications, manufactured by onsemi. This N-Channel JFET is known for its high frequency performance and is suitable for use in a variety of electronic circuits requiring low noise and high gain. The device is packaged in a small SOT-23 package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)30 V
Gate-Source Breakdown Voltage (Vgs)30 V
Drain-Source Current at Vgs=0 (Idss)5 mA to 15 mA
Junction and Storage Temperature (TJ, Tstg)−55 to +150 °C

Key Features

  • High frequency performance suitable for VHF/UHF amplifier applications
  • Low noise operation
  • High gain characteristics
  • Compact SOT-23 package for space-efficient designs
  • Wide operating temperature range from −55 to +150 °C

Applications

The MMBF4416LT1 is commonly used in various high-frequency applications, including:

  • VHF and UHF amplifiers
  • RF amplifiers and circuits
  • Low noise preamplifiers
  • High-frequency switching circuits
  • General-purpose amplifier circuits requiring high gain and low noise

Q & A

  1. What is the MMBF4416LT1 used for? The MMBF4416LT1 is used for VHF/UHF amplifier applications and other high-frequency circuits.
  2. What is the drain-source breakdown voltage of the MMBF4416LT1? The drain-source breakdown voltage (Vds) is 30 V.
  3. What is the gate-source breakdown voltage of the MMBF4416LT1? The gate-source breakdown voltage (Vgs) is 30 V.
  4. What is the typical drain-source current at Vgs=0 for the MMBF4416LT1? The typical drain-source current at Vgs=0 (Idss) ranges from 5 mA to 15 mA.
  5. What is the operating temperature range for the MMBF4416LT1? The junction and storage temperature range is from −55 to +150 °C.
  6. What package type is the MMBF4416LT1 available in? The MMBF4416LT1 is available in a SOT-23 package.
  7. Is the MMBF4416LT1 suitable for low noise applications? Yes, the MMBF4416LT1 is suitable for low noise applications due to its high frequency performance and low noise characteristics.
  8. Can the MMBF4416LT1 be used in RF amplifiers? Yes, the MMBF4416LT1 can be used in RF amplifiers due to its high gain and high frequency capabilities.
  9. What are some common applications of the MMBF4416LT1? Common applications include VHF and UHF amplifiers, RF amplifiers, low noise preamplifiers, and high-frequency switching circuits.
  10. Where can I find detailed specifications for the MMBF4416LT1? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:- 
Voltage - Breakdown (V(BR)GSS):- 
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):- 
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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