MMBFJ111
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onsemi MMBFJ111

Manufacturer No:
MMBFJ111
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 35V 350MW SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ111 is an N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. It is sourced from Process 51 and features interchangeable source and drain terminals. The MMBFJ111 is available in SOT-23 (TO-236) and TO-92 packages, making it versatile for various applications. It is also a Pb-free device, aligning with modern environmental standards.

Key Specifications

Parameter Value Unit
Drain-Gate Voltage (VDG) 35 V
Gate-Source Voltage (VGS) -35 V
Forward Gate Current (IGF) 50 mA
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to 150 °C
Total Device Dissipation (PD) 350 mW
Derate Above 25°C 2.8 mW/°C
Thermal Resistance, Junction-to-Case (RθJC) 125 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 357 °C/W
Gate-Source Breakdown Voltage (V(BR)GSS) -35 V
Gate-Source Cutoff Voltage (VGS(off)) -3.0 to -10.0 V
Drain Cutoff Leakage Current (ID(off)) -1.0 nA nA
Zero-Gate Voltage Drain Current (IDSS) 20 mA mA
Drain-Source On Resistance (rDS(on)) 30 Ω Ω

Key Features

  • Designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers.
  • Sourced from Process 51.
  • Interchangeable source and drain terminals.
  • Pb-free device, compliant with environmental regulations.
  • Available in SOT-23 (TO-236) and TO-92 packages.
  • Low noise operation suitable for sensitive analog applications.

Applications

  • Low-level analog switching.
  • Sample and hold circuits.
  • Chopper stabilized amplifiers.
  • Analog signal processing.
  • Audio and video equipment.
  • Medical devices requiring low noise and high precision.

Q & A

  1. What is the MMBFJ111 used for?

    The MMBFJ111 is used for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers.

  2. What are the package options for the MMBFJ111?

    The MMBFJ111 is available in SOT-23 (TO-236) and TO-92 packages.

  3. What is the maximum drain-gate voltage for the MMBFJ111?

    The maximum drain-gate voltage (VDG) is 35 V.

  4. What is the operating junction temperature range for the MMBFJ111?

    The operating and storage junction temperature range (TJ, TSTG) is -55 to 150°C.

  5. Is the MMBFJ111 a Pb-free device?
  6. What is the typical drain-source on resistance for the MMBFJ111?

    The typical drain-source on resistance (rDS(on)) is 30 Ω.

  7. What is the zero-gate voltage drain current for the MMBFJ111?

    The zero-gate voltage drain current (IDSS) is 20 mA.

  8. What are some common applications of the MMBFJ111?

    Common applications include low-level analog switching, sample and hold circuits, chopper stabilized amplifiers, and analog signal processing.

  9. What is the thermal resistance, junction-to-ambient for the MMBFJ111?

    The thermal resistance, junction-to-ambient (RθJA) is 357°C/W.

  10. Can the source and drain terminals be interchanged on the MMBFJ111?

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):35 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):20 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):30 Ohms
Power - Max:350 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBFJ111 MMBFJ113 MMBFJ112 MMBFJ110
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V 35 V 35 V 25 V
Drain to Source Voltage (Vdss) - - - -
Current - Drain (Idss) @ Vds (Vgs=0) 20 mA @ 15 V 2 mA @ 15 V 5 mA @ 15 V 10 mA @ 15 V
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 3 V @ 1 µA 500 mV @ 1 µA 1 V @ 1 µA 4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds - - - -
Resistance - RDS(On) 30 Ohms 100 Ohms 50 Ohms 18 Ohms
Power - Max 350 mW 350 mW 350 mW 460 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3

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