J112-D74Z
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onsemi J112-D74Z

Manufacturer No:
J112-D74Z
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
JFET N-CH 35V 625MW TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The J112-D74Z, produced by onsemi, is an N-Channel JFET (Junction Field-Effect Transistor) designed for various low-level analog applications. This device is part of the J112 series, which is known for its depletion mode operation and is suitable for chopper stabilized amplifiers, sample and hold circuits, and other analog switching applications.

The J112-D74Z is available in a TO-92 package and is Pb-free, making it compliant with current environmental regulations. It offers a balance of low noise, high input impedance, and low power consumption, making it an ideal choice for sensitive analog circuits.

Key Specifications

Characteristic Symbol Min Max Unit
Drain-Gate Voltage VDG -35 -35 Vdc
Gate-Source Voltage VGS -35 -35 Vdc
Gate Current IG - 50 mAdc
Operating and Storage Junction Temperature Range TJ, Tstg -65 150 °C
Total Device Dissipation at TA = 25°C PD - 350 mW
Derate Above 25°C - - 2.8 mW/°C
Zero-Gate Voltage Drain Current (IDSS) IDSS 25 75 mA
Drain-Source On Resistance (rDS(on)) rDS(on) - 50 Ω
Gate-Source Cut-Off Voltage (VGS(off)) VGS(off) -1.0 -5.0 Vdc
Drain Cutoff Leakage Current (ID(off)) ID(off) - 1.0 nA

Key Features

  • Pb-Free Packages: Available in Pb-free packages, making them compliant with current environmental regulations.
  • Low Noise and High Input Impedance: Suitable for low-level analog applications where noise and input impedance are critical.
  • Depletion Mode Operation: Operates in depletion mode, providing a high degree of control over the drain current.
  • Interchangeable Source and Drain: The source and drain terminals are interchangeable, offering flexibility in circuit design.
  • Low Power Consumption: Designed for low power consumption, making it suitable for battery-powered devices and energy-efficient systems.

Applications

  • Chopper Stabilized Amplifiers: Used in chopper stabilized amplifiers to improve stability and reduce noise.
  • Sample and Hold Circuits: Ideal for sample and hold circuits due to its high input impedance and low noise characteristics.
  • Analog Switching: Suitable for low-level analog switching applications where precision and low noise are required.
  • Audio and Signal Processing: Used in audio and signal processing circuits where high fidelity and low distortion are necessary.

Q & A

  1. What is the maximum drain-gate voltage for the J112-D74Z?

    The maximum drain-gate voltage (VDG) is -35 Vdc.

  2. What is the operating junction temperature range for this device?

    The operating and storage junction temperature range is -65°C to 150°C.

  3. What is the typical zero-gate voltage drain current (IDSS) for the J112-D74Z?

    The IDSS range is from 25 mA to 75 mA.

  4. What is the drain-source on resistance (rDS(on)) for this device?

    The drain-source on resistance (rDS(on)) is up to 50 Ω.

  5. Is the J112-D74Z Pb-free?
  6. What are the typical applications for the J112-D74Z?
  7. What is the maximum gate current for the J112-D74Z?
  8. What is the thermal resistance, junction-to-case (RθJC), for the J112-D74Z?
  9. Can the source and drain terminals be interchanged?
  10. What is the typical drain cutoff leakage current (ID(off)) for the J112-D74Z?

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):35 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):50 Ohms
Power - Max:625 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Same Series
J111-D74Z
J111-D74Z
JFET N-CH 35V 625MW TO92-3
J112-D26Z
J112-D26Z
JFET N-CH 35V 625MW TO92-3
J111
J111
JFET N-CH 35V 625MW TO92-3
J113
J113
JFET N-CH 35V 625MW TO92-3
J111-D26Z
J111-D26Z
JFET N-CH 35V 625MW TO92
MMBFJ113
MMBFJ113
JFET N-CH 35V 350MW SOT23
MMBFJ112
MMBFJ112
JFET N-CH 35V 0.35W SOT-23
J112-D27Z
J112-D27Z
JFET N-CH 35V 625MW TO92-3
J113_D26Z
J113_D26Z
JFET N-CH 35V 625MW TO92
J113_D75Z
J113_D75Z
JFET N-CH 35V 625MW TO92
J113_D27Z
J113_D27Z
JFET N-CH 35V 625MW TO92
J111_D27Z
J111_D27Z
JFET N-CH 35V 625MW TO92

Similar Products

Part Number J112-D74Z J113-D74Z J111-D74Z
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V 35 V 35 V
Drain to Source Voltage (Vdss) - - -
Current - Drain (Idss) @ Vds (Vgs=0) 5 mA @ 15 V 2 mA @ 15 V 20 mA @ 15 V
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 1 V @ 1 µA 500 mV @ 1 µA 3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds - - -
Resistance - RDS(On) 50 Ohms 100 Ohms 30 Ohms
Power - Max 625 mW 625 mW 625 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3

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