Overview
The MMBFJ201 is an N-Channel General Purpose Amplifier produced by onsemi. This device is designed primarily for low-level audio and general-purpose applications, particularly those involving high impedance signal sources. It is sourced from process 52 and is suitable for a wide range of applications due to its versatile characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDG (Drain-Gate Voltage) | 40 | V |
| VGS (Gate-Source Voltage) | -40 | V |
| IGF (Forward Gate Current) | 50 | mA |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to 150 | °C |
| PD (Total Device Dissipation) | 350 | mW |
| RθJA (Thermal Resistance, Junction-to-Ambient) | 357 | °C/W |
| V(BR)GSS (Gate-Source Breakdown Voltage) | -40 | V |
| IGSS (Gate Reverse Current) | -100 pA | pA |
| VGS(off) (Gate-Source Cut-Off Voltage) | -0.3 to -1.5 | V |
| IDSS (Zero-Gate Voltage Drain Current) | 0.2 to 1.0 | mA |
| yFS (Forward Transfer Admittance) | 500 μmhos | μmhos |
| Package Type | SOT-23 (TO-236) |
Key Features
- Designed for low-level audio and general-purpose applications with high impedance signal sources.
- Sourced from process 52, ensuring consistent performance.
- High gate-source breakdown voltage (V(BR)GSS) of -40 V.
- Low gate reverse current (IGSS) of -100 pA.
- Compact SOT-23 (TO-236) package, suitable for space-constrained designs.
- Wide operating and storage junction temperature range of -55 to 150 °C.
- Low total device dissipation of 350 mW with a thermal resistance of 357 °C/W.
Applications
- Low-level audio amplification.
- General-purpose amplification in various electronic circuits.
- High impedance signal source applications.
- Small signal amplification in audio and other low-power applications.
Q & A
- What is the primary application of the MMBFJ201?
The MMBFJ201 is primarily designed for low-level audio and general-purpose applications with high impedance signal sources.
- What is the maximum drain-gate voltage for the MMBFJ201?
The maximum drain-gate voltage (VDG) is 40 V.
- What is the operating and storage junction temperature range for the MMBFJ201?
The operating and storage junction temperature range is -55 to 150 °C.
- What is the total device dissipation for the MMBFJ201?
The total device dissipation (PD) is 350 mW.
- What is the thermal resistance of the MMBFJ201?
The thermal resistance (RθJA) is 357 °C/W.
- What is the gate-source breakdown voltage for the MMBFJ201?
The gate-source breakdown voltage (V(BR)GSS) is -40 V.
- What is the package type of the MMBFJ201?
The package type is SOT-23 (TO-236).
- What is the forward transfer admittance of the MMBFJ201?
The forward transfer admittance (yFS) is 500 μmhos.
- Is the MMBFJ201 suitable for high-power applications?
No, the MMBFJ201 is designed for low-level audio and general-purpose applications and is not suitable for high-power applications.
- Can the MMBFJ201 be used in high-temperature environments?
The MMBFJ201 can operate in a wide temperature range of -55 to 150 °C, making it suitable for various environmental conditions.
