BF510
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NXP USA Inc. BF510

Manufacturer No:
BF510
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF MOSFET N-CHANNEL JFET 20V 100
Delivery:
Payment:
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Product Introduction

Overview

The BF510 is an N-channel silicon field-effect transistor (JFET) manufactured by NXP USA Inc. It is part of the BF510 to BF513 series, designed for applications up to the very high frequency (VHF) range. These transistors are packaged in a miniature plastic envelope, making them suitable for use in hybrid thick and thin-film circuits. The BF510 is particularly noted for its low feedback capacitance and low noise figure, which are critical for high-frequency applications.

Key Specifications

ParameterValue
Drain-source voltage (VDS)20 V
Drain current (ID)0.7 mA (at VDS = 10 V, VGS = 0 V)
Total power dissipation (Ptot)250 mW (at T = 40°C)
Transfer admittance (yfs)2.5 mS (at VDS = 10 V, VGS = 0 V, f = 1 kHz)
Feedback capacitance (Crss)0.3 pF (at VDS = 10 V, VGS = 0 V)
Noise figure (F)1.5 dB (at f = 100 MHz, optimum source admittance)

Key Features

  • Low feedback capacitance
  • Low noise figure
  • Asymmetrical N-channel planar epitaxial junction field-effect transistor
  • Miniature plastic envelope (SOT23 package)
  • Suitable for high-frequency applications up to the VHF range

Applications

The BF510 is suitable for various high-frequency applications, including:

  • RF stages in FM portables
  • Car radios
  • Mains radios
  • Mixer stages in hybrid circuits

Q & A

  1. What is the maximum drain-source voltage for the BF510?
    The maximum drain-source voltage (VDS) for the BF510 is 20 V.
  2. What is the typical drain current for the BF510?
    The typical drain current (ID) for the BF510 is 0.7 mA at VDS = 10 V and VGS = 0 V.
  3. What is the total power dissipation limit for the BF510?
    The total power dissipation (Ptot) limit for the BF510 is 250 mW at T = 40°C.
  4. What is the transfer admittance of the BF510?
    The transfer admittance (yfs) of the BF510 is 2.5 mS at VDS = 10 V, VGS = 0 V, and f = 1 kHz.
  5. What is the feedback capacitance of the BF510?
    The feedback capacitance (Crss) of the BF510 is typically 0.3 pF at VDS = 10 V and VGS = 0 V.
  6. What is the noise figure of the BF510?
    The noise figure (F) of the BF510 is typically 1.5 dB at f = 100 MHz with optimum source admittance.
  7. In what package is the BF510 available?
    The BF510 is available in a miniature plastic envelope (SOT23 package).
  8. What are some common applications of the BF510?
    The BF510 is commonly used in RF stages of FM portables, car radios, mains radios, and mixer stages in hybrid circuits.
  9. Why is the BF510 suitable for high-frequency applications?
    The BF510 is suitable for high-frequency applications due to its low feedback capacitance and low noise figure.
  10. Where can I find detailed specifications for the BF510?
    Detailed specifications for the BF510 can be found in the datasheet available from NXP USA Inc. or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):20 V
Drain to Source Voltage (Vdss):20 V
Current - Drain (Idss) @ Vds (Vgs=0):3 mA @ 10 V
Current Drain (Id) - Max:30 mA
Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 µA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):- 
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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