PMBFJ310,215
  • Share:

NXP USA Inc. PMBFJ310,215

Manufacturer No:
PMBFJ310,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 250MW SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBFJ310,215 is a symmetrical N-channel silicon junction field-effect transistor (JFET) manufactured by NXP USA Inc. This component is packaged in a SOT23 (TO-236-3, SC-59, SOT-23-3) case, making it suitable for surface mount applications. The transistor is designed for low noise operation and features high gain, making it ideal for various high-frequency applications.

Key Specifications

Parameter Value Unit
Manufacturer NXP USA Inc.
Base Part Number MBFJ310
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Power - Max 250 mW
FET Type N-Channel
Configuration SINGLE
Operating Mode DEPLETION MODE
DS Breakdown Voltage-Min 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 24 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id 2 V @ 1 μA
Voltage - Breakdown (V(BR)GSS) 25 V
Resistance - RDS(On) 50 Ohm
Input Capacitance (Ciss) (Max) @ Vds 5 pF @ 10 V
Feedback Cap-Max (Crss) 2.5 pF
RoHS Status ROHS3 Compliant

Key Features

  • Low noise operation
  • High gain
  • Interchangeability of drain and source connections
  • Symmetrical N-channel silicon junction field-effect transistor
  • Suitable for surface mount applications
  • Operating temperature up to 150°C TJ
  • Maximum power dissipation of 250 mW

Applications

  • AM input stage in car radios
  • VHF amplifiers
  • Oscillators and mixers
  • High-frequency applications requiring low noise and high gain

Q & A

  1. What is the package type of the PMBFJ310,215?

    The PMBFJ310,215 is packaged in a SOT23 (TO-236-3, SC-59, SOT-23-3) case.

  2. What is the maximum operating temperature of the PMBFJ310,215?

    The maximum operating temperature is 150°C TJ.

  3. What is the maximum power dissipation of the PMBFJ310,215?

    The maximum power dissipation is 250 mW.

  4. What is the typical drain current (Idss) at Vds = 10 V and Vgs = 0?

    The typical drain current (Idss) is 24 mA at Vds = 10 V and Vgs = 0.

  5. What is the gate-source breakdown voltage (V(BR)GSS)?

    The gate-source breakdown voltage (V(BR)GSS) is 25 V.

  6. Is the PMBFJ310,215 RoHS compliant?

    Yes, the PMBFJ310,215 is ROHS3 compliant.

  7. What are the typical applications of the PMBFJ310,215?

    Typical applications include AM input stages in car radios, VHF amplifiers, oscillators, and mixers.

  8. What is the input capacitance (Ciss) at Vds = 10 V?

    The input capacitance (Ciss) is 5 pF at Vds = 10 V.

  9. What is the resistance - RDS(On) of the PMBFJ310,215?

    The resistance - RDS(On) is 50 Ohm.

  10. Is the PMBFJ310,215 suitable for surface mount applications?

    Yes, the PMBFJ310,215 is suitable for surface mount applications.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):24 mA @ 10 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:2 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):50 Ohms
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
123

Please send RFQ , we will respond immediately.

Same Series
PMBFJ308,215
PMBFJ308,215
JFET N-CH 25V 250MW SOT23
PMBFJ309,215
PMBFJ309,215
JFET N-CH 25V 250MW SOT23

Similar Products

Part Number PMBFJ310,215 PMBFJ110,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V 25 V
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 24 mA @ 10 V 10 mA @ 15 V
Current Drain (Id) - Max - -
Voltage - Cutoff (VGS off) @ Id 2 V @ 1 µA 4 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V 30pF @ 10V (VGS)
Resistance - RDS(On) 50 Ohms 18 Ohms
Power - Max 250 mW 250 mW
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MMBFJ111
MMBFJ111
onsemi
JFET N-CH 35V 350MW SOT23-3
MMBF4117
MMBF4117
onsemi
JFET N-CH 40V 0.225W SOT23
MCH3914-7-TL-H
MCH3914-7-TL-H
onsemi
JFET N-CH 50MA 300MW SC70FL/MCPH
MMBFJ110
MMBFJ110
onsemi
JFET N-CH 25V 0.46W 3-SSOT
MMBF5457
MMBF5457
onsemi
JFET N-CH 25V 350MW SOT23
PMBFJ309,215
PMBFJ309,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBF4393,215
PMBF4393,215
NXP USA Inc.
JFET N-CH 40V 250MW SOT23
PMBFJ174,215
PMBFJ174,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
MMBF5484LT1
MMBF5484LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
MMBFJ309LT1
MMBFJ309LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
PMBFJ175,215
PMBFJ175,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
MKE04Z64VLH4
MKE04Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
MCIMX7U3DVK07SC
MCIMX7U3DVK07SC
NXP USA Inc.
IC I.MX 7ULP VFBGA 361
SC16C652BIB48,128
SC16C652BIB48,128
NXP USA Inc.
IC ENCODER/DECODER IRDA 48LQFP
74HCT14D/S400118
74HCT14D/S400118
NXP USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN