PMBFJ310,215
  • Share:

NXP USA Inc. PMBFJ310,215

Manufacturer No:
PMBFJ310,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 250MW SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBFJ310,215 is a symmetrical N-channel silicon junction field-effect transistor (JFET) manufactured by NXP USA Inc. This component is packaged in a SOT23 (TO-236-3, SC-59, SOT-23-3) case, making it suitable for surface mount applications. The transistor is designed for low noise operation and features high gain, making it ideal for various high-frequency applications.

Key Specifications

Parameter Value Unit
Manufacturer NXP USA Inc.
Base Part Number MBFJ310
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Power - Max 250 mW
FET Type N-Channel
Configuration SINGLE
Operating Mode DEPLETION MODE
DS Breakdown Voltage-Min 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 24 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id 2 V @ 1 μA
Voltage - Breakdown (V(BR)GSS) 25 V
Resistance - RDS(On) 50 Ohm
Input Capacitance (Ciss) (Max) @ Vds 5 pF @ 10 V
Feedback Cap-Max (Crss) 2.5 pF
RoHS Status ROHS3 Compliant

Key Features

  • Low noise operation
  • High gain
  • Interchangeability of drain and source connections
  • Symmetrical N-channel silicon junction field-effect transistor
  • Suitable for surface mount applications
  • Operating temperature up to 150°C TJ
  • Maximum power dissipation of 250 mW

Applications

  • AM input stage in car radios
  • VHF amplifiers
  • Oscillators and mixers
  • High-frequency applications requiring low noise and high gain

Q & A

  1. What is the package type of the PMBFJ310,215?

    The PMBFJ310,215 is packaged in a SOT23 (TO-236-3, SC-59, SOT-23-3) case.

  2. What is the maximum operating temperature of the PMBFJ310,215?

    The maximum operating temperature is 150°C TJ.

  3. What is the maximum power dissipation of the PMBFJ310,215?

    The maximum power dissipation is 250 mW.

  4. What is the typical drain current (Idss) at Vds = 10 V and Vgs = 0?

    The typical drain current (Idss) is 24 mA at Vds = 10 V and Vgs = 0.

  5. What is the gate-source breakdown voltage (V(BR)GSS)?

    The gate-source breakdown voltage (V(BR)GSS) is 25 V.

  6. Is the PMBFJ310,215 RoHS compliant?

    Yes, the PMBFJ310,215 is ROHS3 compliant.

  7. What are the typical applications of the PMBFJ310,215?

    Typical applications include AM input stages in car radios, VHF amplifiers, oscillators, and mixers.

  8. What is the input capacitance (Ciss) at Vds = 10 V?

    The input capacitance (Ciss) is 5 pF at Vds = 10 V.

  9. What is the resistance - RDS(On) of the PMBFJ310,215?

    The resistance - RDS(On) is 50 Ohm.

  10. Is the PMBFJ310,215 suitable for surface mount applications?

    Yes, the PMBFJ310,215 is suitable for surface mount applications.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):24 mA @ 10 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:2 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):50 Ohms
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
123

Please send RFQ , we will respond immediately.

Same Series
PMBFJ308,215
PMBFJ308,215
JFET N-CH 25V 250MW SOT23
PMBFJ310,215
PMBFJ310,215
JFET N-CH 25V 250MW SOT23

Similar Products

Part Number PMBFJ310,215 PMBFJ110,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V 25 V
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 24 mA @ 10 V 10 mA @ 15 V
Current Drain (Id) - Max - -
Voltage - Cutoff (VGS off) @ Id 2 V @ 1 µA 4 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V 30pF @ 10V (VGS)
Resistance - RDS(On) 50 Ohms 18 Ohms
Power - Max 250 mW 250 mW
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

J112-D74Z
J112-D74Z
onsemi
JFET N-CH 35V 625MW TO92
BF510
BF510
NXP USA Inc.
RF MOSFET N-CHANNEL JFET 20V 100
MMBFJ175LT1G
MMBFJ175LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBFJ270
MMBFJ270
onsemi
JFET P-CH 30V 0.225W SOT23
MMBFJ113
MMBFJ113
onsemi
JFET N-CH 35V 350MW SOT23
MMBF5103
MMBF5103
onsemi
JFET N-CH 40V 0.35W SOT-23
MMBFJ175
MMBFJ175
Fairchild Semiconductor
P-CHANNEL JFET, TO-236AB
MMBF4416LT1
MMBF4416LT1
onsemi
MOSFET SS N-CHAN VHF 30V SOT23
MMBF5457LT1
MMBF5457LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
MMBFJ175LT1
MMBFJ175LT1
onsemi
MOSFET SS P-CHAN 25V SOT23
MMBF5457LT1G
MMBF5457LT1G
onsemi
JFET N-CH 25V 0.225W SOT23
MMBF5484LT1G
MMBF5484LT1G
onsemi
JFET N-CH 25V 0.225W SOT23

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
MKL27Z256VFM4
MKL27Z256VFM4
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 32QFN
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
PCAL6416AER
PCAL6416AER
NXP USA Inc.
PARALLEL I/O PORT, 16 I/O, CMOS,
IP4786CZ32518
IP4786CZ32518
NXP USA Inc.
IP4786CZ32S - CONSUMER CIRCUIT
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
TLVH431CDBZR,215
TLVH431CDBZR,215
NXP USA Inc.
IC VREF SHUNT ADJ 1.5% TO236AB