PMBFJ309,215
  • Share:

NXP USA Inc. PMBFJ309,215

Manufacturer No:
PMBFJ309,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 250MW SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBFJ309,215 is a JFET (Junction Field-Effect Transistor) manufactured by NXP USA Inc. This component is designed for use in various electronic circuits, particularly those requiring low noise and high frequency operation. Although the PMBFJ309,215 is currently obsolete and no longer in production, it remains relevant for legacy systems and maintenance purposes.

Key Specifications

SpecificationValue
Part NumberPMBFJ309,215
ManufacturerNXP USA Inc.
DescriptionJFET N-CH 25V 250MW SOT23
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor Element MaterialSILICON
Number of Elements1
Operating Temperature150°C TJ
Power Dissipation-Max (Abs)0.25W
FET TypeN-Channel
DS Breakdown Voltage-Min25V
Current - Drain (Idss) @ Vds (Vgs=0)12mA @ 10V
Voltage - Cutoff (VGS off) @ Id1V @ 1μA
Resistance - RDS(On)50Ohm
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Low Noise Operation: The PMBFJ309,215 is designed to provide low noise performance, making it suitable for applications requiring high signal integrity.
  • High Frequency Capability: This JFET is capable of operating at very high frequencies, which is beneficial for applications such as amplifiers and high-frequency circuits.
  • Compact Package: The component is available in the SOT23-3 package, which is compact and suitable for surface mount technology, allowing for efficient use of board space.
  • High Breakdown Voltage: With a minimum breakdown voltage of 25V, this JFET offers robust performance in various circuit conditions.
  • Low Power Dissipation: The maximum power dissipation of 0.25W ensures that the component can operate efficiently without excessive heat generation.

Applications

The PMBFJ309,215 is primarily used in electronic circuits that require low noise and high frequency operation. Some common applications include:

  • Amplifiers: Due to its low noise and high frequency capabilities, it is often used in amplifier circuits.
  • High Frequency Circuits: Suitable for use in circuits that operate at very high frequencies.
  • Signal Processing: Used in signal processing applications where high signal integrity is necessary.
  • Legacy Systems: Although obsolete, it may still be used in the maintenance and repair of older systems that originally incorporated this component.

Q & A

  1. What is the part number of this JFET?
    The part number of this JFET is PMBFJ309,215.
  2. Who is the manufacturer of the PMBFJ309,215?
    The PMBFJ309,215 is manufactured by NXP USA Inc.
  3. What is the package type of the PMBFJ309,215?
    The PMBFJ309,215 is available in the TO-236-3, SC-59, SOT-23-3 package.
  4. What is the maximum operating temperature of the PMBFJ309,215?
    The maximum operating temperature (TJ) is 150°C.
  5. What is the power dissipation capability of the PMBFJ309,215?
    The maximum power dissipation is 0.25W.
  6. Is the PMBFJ309,215 still in production?
    No, the PMBFJ309,215 is obsolete and no longer manufactured.
  7. What are some common applications of the PMBFJ309,215?
    Common applications include amplifiers, high frequency circuits, and signal processing.
  8. What is the breakdown voltage of the PMBFJ309,215?
    The minimum breakdown voltage is 25V.
  9. What is the current rating of the PMBFJ309,215?
    The drain current (Idss) at Vds (Vgs=0) is 12mA @ 10V.
  10. Is the PMBFJ309,215 RoHS compliant?
    Yes, the PMBFJ309,215 is ROHS3 compliant.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):12 mA @ 10 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):50 Ohms
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
99

Please send RFQ , we will respond immediately.

Same Series
PMBFJ308,215
PMBFJ308,215
JFET N-CH 25V 250MW SOT23
PMBFJ309,215
PMBFJ309,215
JFET N-CH 25V 250MW SOT23

Similar Products

Part Number PMBFJ309,215 PMBFJ109,215 PMBFJ308,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V 25 V 25 V
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 12 mA @ 10 V 40 mA @ 15 V 12 mA @ 10 V
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 1 V @ 1 µA 6 V @ 1 µA 1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V 30pF @ 10V (VGS) 5pF @ 10V
Resistance - RDS(On) 50 Ohms 12 Ohms 50 Ohms
Power - Max 250 mW 250 mW 250 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

MMBF4093
MMBF4093
onsemi
JFET N-CH 40V 350MW SOT23-3
MMBF5103
MMBF5103
onsemi
JFET N-CH 40V 0.35W SOT-23
MMBFU310LT1G
MMBFU310LT1G
onsemi
JFET N-CH 25V 0.225W SOT23-3
MCH3914-7-TL-H
MCH3914-7-TL-H
onsemi
JFET N-CH 50MA 300MW SC70FL/MCPH
MMBFJ175LT3G
MMBFJ175LT3G
onsemi
JFET P-CH 30V 0.225W SOT23
BFR30,235
BFR30,235
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
PMBFJ177,215
PMBFJ177,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
PMBFJ110,215
PMBFJ110,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBFJ620,115
PMBFJ620,115
NXP USA Inc.
JFET 2N-CH 25V 0.19W 6TSSOP
PMBFJ174,215
PMBFJ174,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
MMBFJ175LT1
MMBFJ175LT1
onsemi
MOSFET SS P-CHAN 25V SOT23
BFR30LT1
BFR30LT1
onsemi
JFET N-CH 225MW SOT23

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
MKL26Z128VLH4
MKL26Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MK20FN1M0VLQ12R
MK20FN1M0VLQ12R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
LPC1763FBD100,551
LPC1763FBD100,551
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 100LQFP
SC18IS600IPW/S8HP
SC18IS600IPW/S8HP
NXP USA Inc.
IC I2C CONTROLLER SPI 16TSSOP
AU5780AD/N,112
AU5780AD/N,112
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
74LVC1G17GV-Q100125
74LVC1G17GV-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
PCF7922ATT/D1AC07J
PCF7922ATT/D1AC07J
NXP USA Inc.
RF TRANSMITTER 20TSSOP