PMBFJ309,215
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NXP USA Inc. PMBFJ309,215

Manufacturer No:
PMBFJ309,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 250MW SOT23
Delivery:
Payment:
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Product Introduction

Overview

The PMBFJ309,215 is a JFET (Junction Field-Effect Transistor) manufactured by NXP USA Inc. This component is designed for use in various electronic circuits, particularly those requiring low noise and high frequency operation. Although the PMBFJ309,215 is currently obsolete and no longer in production, it remains relevant for legacy systems and maintenance purposes.

Key Specifications

SpecificationValue
Part NumberPMBFJ309,215
ManufacturerNXP USA Inc.
DescriptionJFET N-CH 25V 250MW SOT23
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor Element MaterialSILICON
Number of Elements1
Operating Temperature150°C TJ
Power Dissipation-Max (Abs)0.25W
FET TypeN-Channel
DS Breakdown Voltage-Min25V
Current - Drain (Idss) @ Vds (Vgs=0)12mA @ 10V
Voltage - Cutoff (VGS off) @ Id1V @ 1μA
Resistance - RDS(On)50Ohm
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Low Noise Operation: The PMBFJ309,215 is designed to provide low noise performance, making it suitable for applications requiring high signal integrity.
  • High Frequency Capability: This JFET is capable of operating at very high frequencies, which is beneficial for applications such as amplifiers and high-frequency circuits.
  • Compact Package: The component is available in the SOT23-3 package, which is compact and suitable for surface mount technology, allowing for efficient use of board space.
  • High Breakdown Voltage: With a minimum breakdown voltage of 25V, this JFET offers robust performance in various circuit conditions.
  • Low Power Dissipation: The maximum power dissipation of 0.25W ensures that the component can operate efficiently without excessive heat generation.

Applications

The PMBFJ309,215 is primarily used in electronic circuits that require low noise and high frequency operation. Some common applications include:

  • Amplifiers: Due to its low noise and high frequency capabilities, it is often used in amplifier circuits.
  • High Frequency Circuits: Suitable for use in circuits that operate at very high frequencies.
  • Signal Processing: Used in signal processing applications where high signal integrity is necessary.
  • Legacy Systems: Although obsolete, it may still be used in the maintenance and repair of older systems that originally incorporated this component.

Q & A

  1. What is the part number of this JFET?
    The part number of this JFET is PMBFJ309,215.
  2. Who is the manufacturer of the PMBFJ309,215?
    The PMBFJ309,215 is manufactured by NXP USA Inc.
  3. What is the package type of the PMBFJ309,215?
    The PMBFJ309,215 is available in the TO-236-3, SC-59, SOT-23-3 package.
  4. What is the maximum operating temperature of the PMBFJ309,215?
    The maximum operating temperature (TJ) is 150°C.
  5. What is the power dissipation capability of the PMBFJ309,215?
    The maximum power dissipation is 0.25W.
  6. Is the PMBFJ309,215 still in production?
    No, the PMBFJ309,215 is obsolete and no longer manufactured.
  7. What are some common applications of the PMBFJ309,215?
    Common applications include amplifiers, high frequency circuits, and signal processing.
  8. What is the breakdown voltage of the PMBFJ309,215?
    The minimum breakdown voltage is 25V.
  9. What is the current rating of the PMBFJ309,215?
    The drain current (Idss) at Vds (Vgs=0) is 12mA @ 10V.
  10. Is the PMBFJ309,215 RoHS compliant?
    Yes, the PMBFJ309,215 is ROHS3 compliant.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):12 mA @ 10 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):50 Ohms
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Same Series
PMBFJ308,215
PMBFJ308,215
JFET N-CH 25V 250MW SOT23
PMBFJ309,215
PMBFJ309,215
JFET N-CH 25V 250MW SOT23

Similar Products

Part Number PMBFJ309,215 PMBFJ109,215 PMBFJ308,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V 25 V 25 V
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 12 mA @ 10 V 40 mA @ 15 V 12 mA @ 10 V
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 1 V @ 1 µA 6 V @ 1 µA 1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V 30pF @ 10V (VGS) 5pF @ 10V
Resistance - RDS(On) 50 Ohms 12 Ohms 50 Ohms
Power - Max 250 mW 250 mW 250 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

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