Overview
The PMBFJ175,215 is a P-channel silicon field-effect transistor (JFET) manufactured by NXP USA Inc. This component is part of the PMBFJ174, PMBFJ175, PMBFJ176, and PMBFJ177 series, which are designed for use in various analog applications. The PMBFJ175,215 is housed in a plastic microminiature SOT23 envelope, making it suitable for surface mount device (SMD) technology. It is particularly useful in applications such as analog switches, choppers, and commutators due to its symmetrical characteristics and the interchangeability of the drain and source connections.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | - | - | 30 | V | |
| VGSo (Gate-Source Voltage) | - | - | 30 | V | |
| IG (Gate Current) | - | - | 50 | mA | |
| Ptot (Total Power Dissipation) | Tamb = 25 °C | - | - | 300 | mW |
| IDSS (Drain Current) | VDS = 15 V; VGS = 0 V | 7 | - | 70 | mA |
| V(BR)GSS (Gate-Source Breakdown Voltage) | IG = 1 μA; VDS = 0 V | - | - | 30 | V |
| VGSoff (Gate-Source Cut-off Voltage) | ID = 10 nA; VDS = -15 V | 3 | - | 6 | V |
| RDSon (Drain-Source On Resistance) | VDS = 0.1 V; VGS = 0 V | - | - | 125 | Ω |
Key Features
- Symmetrical P-channel silicon field-effect transistor in SOT23 package, suitable for SMD technology.
- Interchangeable drain and source connections, enhancing flexibility in circuit design.
- High gate-source breakdown voltage of up to 30 V, ensuring robust performance under various conditions.
- Low drain-source on resistance, making it efficient for switching applications.
- Compliant with EU RoHS, ELV, and China RoHS directives, ensuring environmental sustainability.
Applications
The PMBFJ175,215 is designed for use in a variety of analog applications, including:
- Analog switches: The symmetrical characteristics and low on-resistance make it ideal for switching circuits.
- Choppers: Suitable for high-frequency switching applications due to its fast switching times.
- Commutators: Used in circuits that require efficient and reliable commutation.
Q & A
- What is the PMBFJ175,215?
The PMBFJ175,215 is a P-channel silicon field-effect transistor (JFET) manufactured by NXP USA Inc.. - What package type does the PMBFJ175,215 use?
The PMBFJ175,215 is housed in a plastic microminiature SOT23 envelope. - What are the key applications of the PMBFJ175,215?
The PMBFJ175,215 is used in analog switches, choppers, and commutators. - What is the maximum drain-source voltage for the PMBFJ175,215?
The maximum drain-source voltage is 30 V. - Is the PMBFJ175,215 environmentally compliant?
Yes, it is compliant with EU RoHS, ELV, and China RoHS directives. - What is the typical drain current for the PMBFJ175,215?
The typical drain current is between 7 and 70 mA. - What is the gate-source cut-off voltage for the PMBFJ175,215?
The gate-source cut-off voltage is between 3 and 6 V. - What is the maximum total power dissipation for the PMBFJ175,215?
The maximum total power dissipation is 300 mW at Tamb = 25 °C. - Is the PMBFJ175,215 suitable for surface mount technology?
Yes, it is designed for surface mount device (SMD) technology. - What is the drain-source on resistance for the PMBFJ175,215?
The drain-source on resistance is up to 125 Ω).
