Overview
The MMBF4393LT1G is a JFET (Junction Field-Effect Transistor) switching transistor manufactured by onsemi. This N-channel JFET is part of the MMBF4391L, MMBF4392L, and MMBF4393L series, which are known for their high performance and reliability in various electronic applications. The MMBF4393LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | Vdc |
| Drain-Gate Voltage | VDG | 30 | Vdc |
| Gate-Source Voltage | VGS | 30 | Vdc |
| Forward Gate Current | IG(f) | 50 | mAdc |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Gate-Source Breakdown Voltage | V(BR)GSS | 30 | Vdc |
| Gate Reverse Current | IGSS | 1.0 nAdc (at TA = 25°C), 0.20 nAdc (at TA = 100°C) | nAdc |
| Gate-Source Cutoff Voltage | VGS(off) | -5.0 to -3.0 | Vdc |
| Off-State Drain Current | ID(off) | 1.0 nAdc (at TA = 25°C), 1.0 nAdc (at TA = 100°C) | nAdc |
| Zero-Gate-Voltage Drain Current | IDSS | 30 to 75 | mAdc |
| Drain-Source On-Voltage | VDS(on) | 0.4 | Vdc |
| Static Drain-Source On-Resistance | rDS(on) | 100 | Ω |
| Input Capacitance | Ciss | 14 | pF |
| Reverse Transfer Capacitance | Crss | 3.5 | pF |
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | °C/W |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.
- Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Aligns with modern environmental standards.
- High Performance: Offers reliable switching characteristics and low on-state resistance.
- Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
- Compact Package: SOT-23 (TO-236) package, ideal for space-constrained designs.
Applications
- Automotive Electronics: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Switching Circuits: Ideal for use in switching circuits requiring low on-state resistance and high reliability.
- Audio and Signal Processing: Can be used in audio and signal processing applications where low noise and high fidelity are required.
- Industrial Control Systems: Applicable in industrial control systems that demand robust and reliable components.
Q & A
- What is the maximum drain-source voltage for the MMBF4393LT1G?
The maximum drain-source voltage (VDS) is 30 Vdc.
- What is the operating temperature range for this JFET?
The junction and storage temperature range is from -55°C to +150°C.
- Is the MMBF4393LT1G RoHS compliant?
- What is the typical on-state resistance of the MMBF4393LT1G?
The static drain-source on-resistance (rDS(on)) is typically 100 Ω.
- What package type is used for the MMBF4393LT1G?
The device is packaged in a SOT-23 (TO-236) package.
- What are the key applications for the MMBF4393LT1G?
Key applications include automotive electronics, switching circuits, audio and signal processing, and industrial control systems.
- What is the gate-source cutoff voltage range for the MMBF4393LT1G?
The gate-source cutoff voltage (VGS(off)) range is from -5.0 to -3.0 Vdc.
- What is the zero-gate-voltage drain current range for the MMBF4393LT1G?
The zero-gate-voltage drain current (IDSS) range is from 30 to 75 mA.
- What is the thermal resistance, junction-to-ambient, for the MMBF4393LT1G?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W.
- Is the MMBF4393LT1G suitable for high-frequency applications?
