MMBFJ175
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Fairchild Semiconductor MMBFJ175

Manufacturer No:
MMBFJ175
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
P-CHANNEL JFET, TO-236AB
Delivery:
Payment:
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Product Introduction

Overview

The MMBFJ175 is a P-Channel JFET (Junction Field-Effect Transistor) produced by Fairchild Semiconductor, now part of ON Semiconductor. This device is designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. It is sourced from process 88 and is available in various packages, including TO-92 and SOT-23.

Key Specifications

ParameterValueUnit
Drain-Gate Voltage (VDG)-30V
Gate-Source Voltage (VGS)30V
Forward Gate Current (IGF)50mA
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +150°C
Total Device Dissipation (PD)225mW
Derate Above 25°C1.8mW/°C
Thermal Resistance, Junction to Case (RθJC)125°C/W
Thermal Resistance, Junction to Ambient (RθJA)556°C/W
Gate-Source Breakdown Voltage (V(BR)GSS)30V
Gate-Source Cut-Off Voltage (VGS(off))3.0 - 6.0V
Zero-Gate Voltage Drain Current (IDSS)-7.0 to -60.0mA
Drain-Source On Resistance (rDS(on))125Ω

Key Features

  • P-Channel JFET with low noise and high input impedance, making it suitable for analog switching applications.
  • Available in TO-92 and SOT-23 packages, offering flexibility in design and space-saving options.
  • Maximum drain-source voltage of 30 V and maximum gate-source voltage of 30 V.
  • Maximum drain current of 60 mA and low drain-source on resistance.
  • Operating temperature range from -55°C to +150°C, ensuring reliability in various environments.

Applications

The MMBFJ175 is primarily used in low-level analog switching circuits, sample-and-hold circuits, and chopper-stabilized amplifiers. It is also suitable for other applications requiring low noise and high input impedance, such as audio circuits, medical devices, and industrial control systems.

Q & A

  1. What is the MMBFJ175? The MMBFJ175 is a P-Channel JFET produced by Fairchild Semiconductor, designed for low-level analog switching and other high-impedance applications.
  2. What are the package options for the MMBFJ175? The MMBFJ175 is available in TO-92 and SOT-23 packages.
  3. What is the maximum drain-source voltage for the MMBFJ175? The maximum drain-source voltage is 30 V.
  4. What is the maximum gate-source voltage for the MMBFJ175? The maximum gate-source voltage is 30 V.
  5. What is the operating temperature range for the MMBFJ175? The operating temperature range is from -55°C to +150°C.
  6. What are the typical applications for the MMBFJ175? Typical applications include low-level analog switching, sample-and-hold circuits, chopper-stabilized amplifiers, audio circuits, medical devices, and industrial control systems.
  7. What is the maximum drain current for the MMBFJ175? The maximum drain current is 60 mA.
  8. What is the drain-source on resistance for the MMBFJ175? The drain-source on resistance is 125 Ω.
  9. Is the MMBFJ175 suitable for high-power applications? No, the MMBFJ175 is designed for low-level analog switching and is not suitable for high-power applications.
  10. Can the source and drain be interchanged in the MMBFJ175? Yes, the source and drain are interchangeable in the MMBFJ175.
  11. What is the thermal resistance from junction to ambient for the MMBFJ175 in an SOT-23 package? The thermal resistance from junction to ambient is 556 °C/W for the SOT-23 package.

Product Attributes

FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):7 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):125 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Same Series
MMBFJ175
MMBFJ175
P-CHANNEL JFET, TO-236AB

Similar Products

Part Number MMBFJ175 MMBFJ176 MMBFJ177
Manufacturer Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V 30 V 30 V
Drain to Source Voltage (Vdss) - - -
Current - Drain (Idss) @ Vds (Vgs=0) 7 mA @ 15 V 2 mA @ 15 V 1.5 mA @ 15 V
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 3 V @ 10 nA 1 V @ 10 nA 800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds - - -
Resistance - RDS(On) 125 Ohms 250 Ohms 300 Ohms
Power - Max 225 mW 225 mW 225 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

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