MJD45H11TF
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Fairchild Semiconductor MJD45H11TF

Manufacturer No:
MJD45H11TF
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
TRANS PNP 80V 8A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD45H11TF is a PNP Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor. This transistor is designed for general-purpose power and switching applications, making it suitable for output or driver stages in various electronic circuits. Although the product is currently obsolete and not in production, it remains a valuable component for reference and legacy systems.

Key Specifications

Parameter Conditions Min. Typ. Max. Unit
VCEO -80 V
VEBO -5 V
IC (DC) -8 A
ICP (Pulse) -16 A
PC (TC = 25°C) 20 W
PC (TA = 25°C) 1.75 W
TJ 150 °C
TSTG -55 150 °C
VCEO(sus) IC = -30 mA, IB = 0 -80 V
ICEO VCE = -80 V, IB = 0 -10 μA
IEBO VEB = -5 V, IC = 0 -50 μA
hFE VCE = -1 V, IC = -2 A 60
VCE(sat) IC = -8 A, IB = -0.4 A -1 V
VBE(sat) IC = -8 A, IB = -0.8 A -1.5 V
fT VCE = -10 V, IC = -0.5 A 40 MHz
Cob VCB = -10 V, f = 1 MHz 230 pF
tON IC = -5 A, IB1 = IB2 = -0.5 A 135 ns
tSTG 500 ns
tF 100 ns

Key Features

  • General-Purpose Power and Switching: Suitable for output or driver stages in various applications.
  • D-PAK Package: Designed for surface-mount applications, with lead-formed options for easy mounting.
  • Fast Switching Speeds: Enables quick turn-on and turn-off times, making it ideal for high-frequency applications.
  • Low Collector Emitter Saturation Voltage: Reduces power losses and improves efficiency in switching applications.

Applications

  • Output or Driver Stages: Used in power amplifiers, motor drivers, and other high-current applications.
  • Switching Circuits: Suitable for use in switching power supplies, relay drivers, and other switching applications.
  • Automotive and Industrial Systems: Can be used in various automotive and industrial control systems due to its robust specifications.

Q & A

  1. What is the MJD45H11TF transistor used for?

    The MJD45H11TF is used for general-purpose power and switching applications, such as output or driver stages in electronic circuits.

  2. What is the maximum collector current of the MJD45H11TF?

    The maximum collector current (DC) is -8 A, and the maximum collector current (pulse) is -16 A.

  3. What is the package type of the MJD45H11TF?

    The MJD45H11TF comes in a TO-252 3L (DPAK) package, suitable for surface-mount applications.

  4. What is the maximum junction temperature of the MJD45H11TF?

    The maximum junction temperature is 150°C.

  5. Is the MJD45H11TF still in production?

    No, the MJD45H11TF is obsolete and not in production.

  6. What are the typical applications of the MJD45H11TF?

    Typical applications include output or driver stages, switching circuits, and various automotive and industrial systems.

  7. What is the collector-emitter saturation voltage of the MJD45H11TF?

    The collector-emitter saturation voltage is approximately -1 V.

  8. What is the current gain bandwidth product of the MJD45H11TF?

    The current gain bandwidth product (fT) is 40 MHz.

  9. What is the turn-on time of the MJD45H11TF?

    The turn-on time (tON) is approximately 135 ns.

  10. What is the storage temperature range of the MJD45H11TF?

    The storage temperature range is -55°C to +150°C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:40MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252-3
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Same Series
MJD45H11TM
MJD45H11TM
TRANS PNP 80V 8A TO252-3

Similar Products

Part Number MJD45H11TF MJD45H11TM MJD44H11TF MJD45H11T4
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi STMicroelectronics
Product Status Active Active Active Active
Transistor Type PNP PNP NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10µA 10µA 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W 1.75 W 20 W
Frequency - Transition 40MHz 40MHz 50MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252-3 TO-252-3 D-Pak DPAK

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