MMBF5457LT1G
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onsemi MMBF5457LT1G

Manufacturer No:
MMBF5457LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 0.225W SOT23
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The MMBF5457LT1G is a N-Channel General Purpose JFET (Junction Field-Effect Transistor) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low noise and high input impedance. It is packaged in a SOT-23-3 (TO-236) surface mount package, making it suitable for compact and efficient circuit designs.

Key Specifications

Parameter Value Unit
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500 mV @ 10nA
Input Capacitance (Ciss) @ Vds 7 pF @ 15V
Mounting Type Surface Mount
Package / Case SOT-23-3 (TO-236)
Power - Max 225 mW

Key Features

  • Low Noise Operation: Suitable for applications requiring minimal noise interference.
  • High Input Impedance: Ideal for circuits where high input impedance is necessary.
  • Compact Package: SOT-23-3 (TO-236) surface mount package for space-efficient designs.
  • General Purpose: Versatile transistor for a wide range of applications, including amplifiers and switches.
  • Low Power Consumption: Maximum power dissipation of 225 mW, making it energy-efficient.

Applications

  • Audio Amplifiers: Used in audio circuits where low noise and high fidelity are crucial.
  • Switching Circuits: Suitable for switching applications due to its fast switching times and low on-resistance.
  • Voltage Regulators: Can be used in voltage regulator circuits to provide stable output voltages.
  • Measurement Instruments: Used in measurement instruments where high input impedance is required.
  • Consumer Electronics: Found in various consumer electronic devices such as radios, TVs, and other electronic appliances.

Q & A

  1. What is the maximum voltage rating for the MMBF5457LT1G?

    The maximum voltage rating for the MMBF5457LT1G is 25V.

  2. What is the typical drain current (Idss) at Vds = 15V and Vgs = 0?

    The typical drain current (Idss) at Vds = 15V and Vgs = 0 is 1 mA.

  3. What is the input capacitance (Ciss) at Vds = 15V?

    The input capacitance (Ciss) at Vds = 15V is 7 pF.

  4. What is the maximum power dissipation for the MMBF5457LT1G?

    The maximum power dissipation for the MMBF5457LT1G is 225 mW.

  5. What package type is the MMBF5457LT1G available in?

    The MMBF5457LT1G is available in a SOT-23-3 (TO-236) surface mount package.

  6. What are some common applications for the MMBF5457LT1G?

    Common applications include audio amplifiers, switching circuits, voltage regulators, measurement instruments, and consumer electronics.

  7. Why is the MMBF5457LT1G suitable for low noise applications?

    The MMBF5457LT1G is suitable for low noise applications due to its inherent low noise characteristics.

  8. Can the MMBF5457LT1G be used in high-frequency applications?

    Yes, the MMBF5457LT1G can be used in high-frequency applications due to its fast switching times and low capacitance.

  9. How does the MMBF5457LT1G differ from other JFETs in terms of package size?

    The MMBF5457LT1G is packaged in a compact SOT-23-3 (TO-236) surface mount package, making it ideal for space-constrained designs.

  10. What is the typical voltage cutoff (VGS off) for the MMBF5457LT1G?

    The typical voltage cutoff (VGS off) for the MMBF5457LT1G is 500 mV at Id = 10 nA.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):1 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:500 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
Resistance - RDS(On):- 
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBF5457LT1G MMBF5457LT1
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel -
Voltage - Breakdown (V(BR)GSS) 25 V -
Drain to Source Voltage (Vdss) 25 V -
Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 15 V -
Current Drain (Id) - Max - -
Voltage - Cutoff (VGS off) @ Id 500 mV @ 10 nA -
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V -
Resistance - RDS(On) - -
Power - Max 225 mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -

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