Overview
The MMBF5457LT1G is a N-Channel General Purpose JFET (Junction Field-Effect Transistor) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low noise and high input impedance. It is packaged in a SOT-23-3 (TO-236) surface mount package, making it suitable for compact and efficient circuit designs.
Key Specifications
Parameter | Value | Unit |
---|---|---|
FET Type | N-Channel | |
Voltage - Breakdown (V(BR)GSS) | 25 | V |
Current - Drain (Idss) @ Vds (Vgs=0) | 1 | mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 500 | mV @ 10nA |
Input Capacitance (Ciss) @ Vds | 7 | pF @ 15V |
Mounting Type | Surface Mount | |
Package / Case | SOT-23-3 (TO-236) | |
Power - Max | 225 | mW |
Key Features
- Low Noise Operation: Suitable for applications requiring minimal noise interference.
- High Input Impedance: Ideal for circuits where high input impedance is necessary.
- Compact Package: SOT-23-3 (TO-236) surface mount package for space-efficient designs.
- General Purpose: Versatile transistor for a wide range of applications, including amplifiers and switches.
- Low Power Consumption: Maximum power dissipation of 225 mW, making it energy-efficient.
Applications
- Audio Amplifiers: Used in audio circuits where low noise and high fidelity are crucial.
- Switching Circuits: Suitable for switching applications due to its fast switching times and low on-resistance.
- Voltage Regulators: Can be used in voltage regulator circuits to provide stable output voltages.
- Measurement Instruments: Used in measurement instruments where high input impedance is required.
- Consumer Electronics: Found in various consumer electronic devices such as radios, TVs, and other electronic appliances.
Q & A
- What is the maximum voltage rating for the MMBF5457LT1G?
The maximum voltage rating for the MMBF5457LT1G is 25V.
- What is the typical drain current (Idss) at Vds = 15V and Vgs = 0?
The typical drain current (Idss) at Vds = 15V and Vgs = 0 is 1 mA.
- What is the input capacitance (Ciss) at Vds = 15V?
The input capacitance (Ciss) at Vds = 15V is 7 pF.
- What is the maximum power dissipation for the MMBF5457LT1G?
The maximum power dissipation for the MMBF5457LT1G is 225 mW.
- What package type is the MMBF5457LT1G available in?
The MMBF5457LT1G is available in a SOT-23-3 (TO-236) surface mount package.
- What are some common applications for the MMBF5457LT1G?
Common applications include audio amplifiers, switching circuits, voltage regulators, measurement instruments, and consumer electronics.
- Why is the MMBF5457LT1G suitable for low noise applications?
The MMBF5457LT1G is suitable for low noise applications due to its inherent low noise characteristics.
- Can the MMBF5457LT1G be used in high-frequency applications?
Yes, the MMBF5457LT1G can be used in high-frequency applications due to its fast switching times and low capacitance.
- How does the MMBF5457LT1G differ from other JFETs in terms of package size?
The MMBF5457LT1G is packaged in a compact SOT-23-3 (TO-236) surface mount package, making it ideal for space-constrained designs.
- What is the typical voltage cutoff (VGS off) for the MMBF5457LT1G?
The typical voltage cutoff (VGS off) for the MMBF5457LT1G is 500 mV at Id = 10 nA.