PMBFJ110,215
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NXP USA Inc. PMBFJ110,215

Manufacturer No:
PMBFJ110,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 250MW SOT23
Delivery:
Payment:
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Product Introduction

Overview

The PMBFJ110,215 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by NXP USA Inc. Although this component is currently obsolete and no longer in production, it remains relevant for understanding and comparing JFETs in various applications. The PMBFJ110,215 is part of the PMBFJ110 series, which is known for its reliability and performance in low-current and analog signal amplification scenarios.

Key Specifications

ParameterValueUnit
Part NumberPMBFJ110,215-
CategoryTransistors - JFETs-
ManufacturerNXP USA Inc.-
DescriptionJFET N-CH 25V 6mA-
Package / CaseTO-236-3, SC-59, SOT-23-3-
Operating Temperature (TJ)150°C°C
Mounting TypeSurface Mount-
Power - Max250 mWmW
FET TypeN-Channel-
Drain to Source Voltage (Vdss)25 VV
Input Capacitance (Ciss) @ Vds30 pF @ 10 V (VGS)pF
Voltage - Breakdown (V(BR)GSS)25 VV
Current - Drain (Idss) @ Vds (Vgs=0)6 mA @ 15 VmA
Voltage - Cutoff (VGS off) @ Id6 V @ 1 µAV
Resistance - RDS(On)12 OhmsOhms

Key Features

  • High Input Impedance: The PMBFJ110,215 has high input impedance, making it suitable for applications where minimal signal distortion is required.
  • Low Noise Performance: It offers better noise performance compared to MOSFETs, particularly in the absence of 1/f noise.
  • Normally On Operation: The JFET is normally on, meaning the drain and source are conductive when no voltage is applied to the gate.
  • Compact Package: Available in TO-236-3, SC-59, and SOT-23-3 packages, making it suitable for surface mount applications.
  • Low Current Handling: Designed for low current applications, typically up to 6 mA.

Applications

The PMBFJ110,215 is generally used in low-current and analog signal amplification scenarios. It is suitable for applications such as audio amplifiers, voltage regulators, and other low-power electronic circuits where high input impedance and low noise are critical.

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the PMBFJ110,215?
    The maximum drain-to-source voltage (Vdss) is 25 V.
  2. What is the typical input capacitance (Ciss) of the PMBFJ110,215?
    The typical input capacitance (Ciss) is 30 pF at 10 V (VGS).
  3. What is the operating temperature range of the PMBFJ110,215?
    The operating temperature range is up to 150°C (TJ).
  4. What is the maximum power dissipation of the PMBFJ110,215?
    The maximum power dissipation is 250 mW.
  5. Is the PMBFJ110,215 still in production?
    No, the PMBFJ110,215 is obsolete and no longer manufactured.
  6. What are the available package types for the PMBFJ110,215?
    The available package types are TO-236-3, SC-59, and SOT-23-3.
  7. What is the typical drain current (Idss) of the PMBFJ110,215?
    The typical drain current (Idss) is 6 mA at 15 V (Vgs=0).
  8. What is the voltage cutoff (VGS off) of the PMBFJ110,215?
    The voltage cutoff (VGS off) is 6 V at 1 µA.
  9. What is the on-resistance (RDS(On)) of the PMBFJ110,215?
    The on-resistance (RDS(On)) is 12 Ohms.
  10. In what types of applications is the PMBFJ110,215 typically used?
    The PMBFJ110,215 is typically used in low-current and analog signal amplification scenarios.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):10 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:4 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:30pF @ 10V (VGS)
Resistance - RDS(On):18 Ohms
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Same Series
PMBFJ110,215
PMBFJ110,215
JFET N-CH 25V 250MW SOT23
PMBFJ108,215
PMBFJ108,215
JFET N-CH 25V 250MW SOT23

Similar Products

Part Number PMBFJ110,215 PMBFJ111,215 PMBFJ112,215 PMBFJ310,215 PMBFJ113,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V 40 V 40 V 25 V 40 V
Drain to Source Voltage (Vdss) 25 V 40 V 40 V 25 V 40 V
Current - Drain (Idss) @ Vds (Vgs=0) 10 mA @ 15 V 20 mA @ 15 V 5 mA @ 15 V 24 mA @ 10 V 2 mA @ 15 V
Current Drain (Id) - Max - - - - -
Voltage - Cutoff (VGS off) @ Id 4 V @ 1 µA 10 V @ 1 µA 5 V @ 1 µA 2 V @ 1 µA 3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V (VGS) 6pF @ 10V (VGS) 6pF @ 10V (VGS) 5pF @ 10V 6pF @ 10V (VGS)
Resistance - RDS(On) 18 Ohms 30 Ohms 50 Ohms 50 Ohms 100 Ohms
Power - Max 250 mW 300 mW 300 mW 250 mW 300 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

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