Overview
The MMBF5484LT1G is a small signal N-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. This device is packaged in a SOT-23 (TO-236) case, making it suitable for surface mount applications. The MMBF5484LT1G is designed for use in various electronic circuits requiring low noise and high input impedance.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 25 | Vdc |
| Gate-Source Breakdown Voltage | V(BR)GSS | - | 25 | Vdc |
| Reverse Gate-Source Voltage | VGS(r) | - | 25 | Vdc |
| Forward Gate Current | IG(f) | - | 10 | mAdc |
| Zero-Gate-Voltage Drain Current | IDSS | 1.0 | 5.0 | mAdc |
| Gate Source Cutoff Voltage | VGS(off) | -0.3 | -3.0 | Vdc |
| Continuous Device Dissipation at TC = 25°C | PD | - | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C |
Key Features
- Pb-Free Package: Available in a lead-free SOT-23 package, making it compliant with environmental regulations.
- Low Noise and High Input Impedance: Suitable for applications requiring minimal noise and high input impedance.
- Small Signal Operation: Designed for small signal applications, making it ideal for amplifier circuits.
- Depletion Mode Operation: Operates in depletion mode, providing a wide range of control over the drain current.
- Surface Mount Capability: Compatible with surface mount technology, facilitating easy integration into modern electronic designs.
Applications
- Amplifier Circuits: Commonly used in amplifier circuits due to its low noise and high input impedance characteristics.
- RF Amplifiers: Suitable for RF amplifier applications, especially in the N-Channel configuration.
- General Purpose Electronics: Used in various general-purpose electronic circuits requiring a JFET with good stability and reliability.
- Automotive and Industrial Electronics: Can be used in automotive and industrial electronics where robust and reliable JFETs are required.
Q & A
- What is the maximum drain-source voltage for the MMBF5484LT1G?
The maximum drain-source voltage is 25 Vdc.
- What is the gate-source breakdown voltage for this JFET?
The gate-source breakdown voltage is up to 25 Vdc.
- What is the typical zero-gate-voltage drain current range for the MMBF5484LT1G?
The zero-gate-voltage drain current (IDSS) ranges from 1.0 to 5.0 mA.
- What is the thermal resistance, junction-to-ambient for this device?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W.
- Is the MMBF5484LT1G Pb-free?
- What is the operating temperature range for the MMBF5484LT1G?
The junction and storage temperature range is from -55°C to 150°C.
- What type of package does the MMBF5484LT1G come in?
The device is packaged in a SOT-23 (TO-236) case.
- Is the MMBF5484LT1G suitable for surface mount applications?
- What are common applications for the MMBF5484LT1G?
- What is the maximum continuous device dissipation at TC = 25°C?
