SMMBFJ177LT1G
  • Share:

onsemi SMMBFJ177LT1G

Manufacturer No:
SMMBFJ177LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS JFET P-CH SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMBFJ177LT1G is a P-channel JFET (Junction Field-Effect Transistor) device manufactured by onsemi. It is specifically designed for analog switching and chopper applications. This device is notable for its low on-resistance, which enhances efficiency and extends battery life in various electronic systems. The SMMBFJ177LT1G is packaged in a miniature SOT-23 surface mount package, which helps in saving board space and facilitating compact design solutions.

Key Specifications

Characteristic Symbol Min Max Unit
Drain-Gate Voltage VDG -25 -25 Vdc
Gate-Source Voltage VGS 25 25 Vdc
Gate-Source Breakdown Voltage V(BR)GSS 30 - Vdc
Gate Reverse Current IGSS - 1.0 nA dc
Gate Source Cutoff Voltage VGS(off) 0.8 2.5 Vdc
Zero-Gate-Voltage Drain Current IDSS -1.5 -20 mA
Drain Cutoff Current ID(off) - -1.0 nA dc
Drain Source On Resistance rDS(on) - 300 Ω -
Input Capacitance Ciss - 11 pF -
Reverse Transfer Capacitance Crss - 5.5 pF -
Junction and Storage Temperature TJ, Tstg -55 150 °C
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW - -
Thermal Resistance, Junction-to-Ambient RJA - 556 °C/W -

Key Features

  • P-Channel JFET: Designed for analog switching and chopper applications.
  • Low On-Resistance: Enhances efficiency and extends battery life.
  • Miniature SOT-23 Package: Saves board space and facilitates compact design solutions.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • Analog Switching: Ideal for applications requiring precise control over signal paths.
  • Chopper Applications: Used in circuits that require high-frequency switching.
  • Automotive Systems: Qualified for use in automotive applications due to its AEC-Q101 certification.
  • Industrial Control Systems: Suitable for various industrial control and automation applications.
  • Consumer Electronics: Can be used in a variety of consumer electronic devices requiring efficient switching.

Q & A

  1. What is the primary application of the SMMBFJ177LT1G JFET?

    The SMMBFJ177LT1G is primarily used for analog switching and chopper applications.

  2. What is the maximum drain-gate voltage for the SMMBFJ177LT1G?

    The maximum drain-gate voltage (VDG) is -25 Vdc.

  3. What is the gate-source breakdown voltage of the SMMBFJ177LT1G?

    The gate-source breakdown voltage (V(BR)GSS) is 30 Vdc.

  4. What is the typical on-resistance of the SMMBFJ177LT1G?

    The drain source on-resistance (rDS(on)) is up to 300 Ω.

  5. Is the SMMBFJ177LT1G RoHS compliant?

    Yes, the SMMBFJ177LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What is the junction and storage temperature range for the SMMBFJ177LT1G?

    The junction and storage temperature range is -55°C to +150°C.

  7. What package type is used for the SMMBFJ177LT1G?

    The SMMBFJ177LT1G is packaged in a miniature SOT-23 surface mount package.

  8. Is the SMMBFJ177LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.

  9. What is the total device dissipation for the SMMBFJ177LT1G on an FR-5 board at 25°C?

    The total device dissipation (PD) is 225 mW.

  10. What is the thermal resistance, junction-to-ambient, for the SMMBFJ177LT1G?

    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.

Product Attributes

FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):1.5 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V (VGS)
Resistance - RDS(On):300 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.45
1,236

Please send RFQ , we will respond immediately.

Same Series
MMBFJ177LT1G
MMBFJ177LT1G
JFET P-CH 30V 0.225W SOT23-3

Similar Products

Part Number SMMBFJ177LT1G SMMBFJ175LT1G SMMBFJ177LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel -
Voltage - Breakdown (V(BR)GSS) 30 V 30 V -
Drain to Source Voltage (Vdss) - - -
Current - Drain (Idss) @ Vds (Vgs=0) 1.5 mA @ 15 V 7 mA @ 15 V -
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 800 mV @ 10 nA 3 V @ 10 nA -
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V (VGS) 11pF @ 10V (VGS) -
Resistance - RDS(On) 300 Ohms 125 Ohms -
Power - Max 225 mW 225 mW -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

J112-D74Z
J112-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MMBFJ175LT1G
MMBFJ175LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBF4393LT1G
MMBF4393LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBFJ112
MMBFJ112
onsemi
JFET N-CH 35V 0.35W SOT-23
MMBFJ108
MMBFJ108
onsemi
JFET N-CH 25V 350MW SSOT3
MMBF5457
MMBF5457
onsemi
JFET N-CH 25V 350MW SOT23
BFR30,235
BFR30,235
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
PMBFJ310,215
PMBFJ310,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBFJ109,215
PMBFJ109,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBFJ620,115
PMBFJ620,115
NXP USA Inc.
JFET 2N-CH 25V 0.19W 6TSSOP
MMBF4393LT1
MMBF4393LT1
onsemi
JFET N-CH 30V 0.225W SOT23
MMBF5484LT1
MMBF5484LT1
onsemi
MOSFET SS N-CHAN 25V SOT23

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4