SMMBFJ177LT1G
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onsemi SMMBFJ177LT1G

Manufacturer No:
SMMBFJ177LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS JFET P-CH SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMBFJ177LT1G is a P-channel JFET (Junction Field-Effect Transistor) device manufactured by onsemi. It is specifically designed for analog switching and chopper applications. This device is notable for its low on-resistance, which enhances efficiency and extends battery life in various electronic systems. The SMMBFJ177LT1G is packaged in a miniature SOT-23 surface mount package, which helps in saving board space and facilitating compact design solutions.

Key Specifications

Characteristic Symbol Min Max Unit
Drain-Gate Voltage VDG -25 -25 Vdc
Gate-Source Voltage VGS 25 25 Vdc
Gate-Source Breakdown Voltage V(BR)GSS 30 - Vdc
Gate Reverse Current IGSS - 1.0 nA dc
Gate Source Cutoff Voltage VGS(off) 0.8 2.5 Vdc
Zero-Gate-Voltage Drain Current IDSS -1.5 -20 mA
Drain Cutoff Current ID(off) - -1.0 nA dc
Drain Source On Resistance rDS(on) - 300 Ω -
Input Capacitance Ciss - 11 pF -
Reverse Transfer Capacitance Crss - 5.5 pF -
Junction and Storage Temperature TJ, Tstg -55 150 °C
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW - -
Thermal Resistance, Junction-to-Ambient RJA - 556 °C/W -

Key Features

  • P-Channel JFET: Designed for analog switching and chopper applications.
  • Low On-Resistance: Enhances efficiency and extends battery life.
  • Miniature SOT-23 Package: Saves board space and facilitates compact design solutions.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • Analog Switching: Ideal for applications requiring precise control over signal paths.
  • Chopper Applications: Used in circuits that require high-frequency switching.
  • Automotive Systems: Qualified for use in automotive applications due to its AEC-Q101 certification.
  • Industrial Control Systems: Suitable for various industrial control and automation applications.
  • Consumer Electronics: Can be used in a variety of consumer electronic devices requiring efficient switching.

Q & A

  1. What is the primary application of the SMMBFJ177LT1G JFET?

    The SMMBFJ177LT1G is primarily used for analog switching and chopper applications.

  2. What is the maximum drain-gate voltage for the SMMBFJ177LT1G?

    The maximum drain-gate voltage (VDG) is -25 Vdc.

  3. What is the gate-source breakdown voltage of the SMMBFJ177LT1G?

    The gate-source breakdown voltage (V(BR)GSS) is 30 Vdc.

  4. What is the typical on-resistance of the SMMBFJ177LT1G?

    The drain source on-resistance (rDS(on)) is up to 300 Ω.

  5. Is the SMMBFJ177LT1G RoHS compliant?

    Yes, the SMMBFJ177LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What is the junction and storage temperature range for the SMMBFJ177LT1G?

    The junction and storage temperature range is -55°C to +150°C.

  7. What package type is used for the SMMBFJ177LT1G?

    The SMMBFJ177LT1G is packaged in a miniature SOT-23 surface mount package.

  8. Is the SMMBFJ177LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.

  9. What is the total device dissipation for the SMMBFJ177LT1G on an FR-5 board at 25°C?

    The total device dissipation (PD) is 225 mW.

  10. What is the thermal resistance, junction-to-ambient, for the SMMBFJ177LT1G?

    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.

Product Attributes

FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):1.5 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V (VGS)
Resistance - RDS(On):300 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

$0.45
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Same Series
MMBFJ177LT1G
MMBFJ177LT1G
JFET P-CH 30V 0.225W SOT23-3

Similar Products

Part Number SMMBFJ177LT1G SMMBFJ175LT1G SMMBFJ177LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel -
Voltage - Breakdown (V(BR)GSS) 30 V 30 V -
Drain to Source Voltage (Vdss) - - -
Current - Drain (Idss) @ Vds (Vgs=0) 1.5 mA @ 15 V 7 mA @ 15 V -
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 800 mV @ 10 nA 3 V @ 10 nA -
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V (VGS) 11pF @ 10V (VGS) -
Resistance - RDS(On) 300 Ohms 125 Ohms -
Power - Max 225 mW 225 mW -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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