PMBFJ308,215
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NXP USA Inc. PMBFJ308,215

Manufacturer No:
PMBFJ308,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 250MW SOT23
Delivery:
Payment:
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Product Introduction

Overview

The PMBFJ308,215 is an N-channel silicon field-effect transistor (FET) produced by NXP USA Inc. This component is part of the PMBFJ308 series and is packaged in a plastic surface-mounted SOT23 envelope. Although the product is currently obsolete and no longer manufactured, it remains relevant for legacy systems and maintenance purposes. The PMBFJ308,215 is designed for various electronic applications requiring low power consumption and high reliability.

Key Specifications

ParameterConditionsMinTypMaxUnit
VDS (Drain-Source Voltage)DC--±25V
VGSO (Gate-Source Voltage)Open Drain---25V
VGDO (Gate-Drain Voltage)Open Source---25V
IG (Forward Gate Current)DC--50mA
IDSS (Drain Current)VGS = 0 V; VDS = 10 V12-60mA
Ptot (Total Power Dissipation)Tamb = 25 °C--250mW
Tstg (Storage Temperature)--65-150°C
Tj (Junction Temperature)---150°C
Rth(j-a) (Thermal Resistance from Junction to Ambient)--500K/W

Key Features

  • N-channel silicon field-effect transistor in SOT23 package, suitable for surface mount applications.
  • Low power consumption with a total power dissipation of up to 250 mW at 25 °C.
  • High reliability with a junction temperature rating of up to 150 °C.
  • Interchangeable drain and source pins, offering flexibility in circuit design.
  • Low drain current (IDSS) range of 12 to 60 mA at VGS = 0 V and VDS = 10 V.

Applications

The PMBFJ308,215 is suitable for a variety of low-power electronic applications, including:

  • Audio and video equipment where low noise and high fidelity are required.
  • Industrial control systems that need reliable and efficient switching.
  • Automotive electronics, particularly in systems requiring low power consumption and high reliability.
  • Consumer electronics such as portable devices and home appliances.

Q & A

  1. What is the package type of the PMBFJ308,215?
    The PMBFJ308,215 is packaged in a plastic surface-mounted SOT23 envelope.
  2. What is the maximum drain-source voltage for the PMBFJ308,215?
    The maximum drain-source voltage (VDS) is ±25 V.
  3. What is the total power dissipation of the PMBFJ308,215 at 25 °C?
    The total power dissipation (Ptot) is up to 250 mW at 25 °C.
  4. Is the PMBFJ308,215 still in production?
    No, the PMBFJ308,215 is currently obsolete and no longer manufactured.
  5. What is the junction temperature rating of the PMBFJ308,215?
    The junction temperature rating is up to 150 °C.
  6. Can the drain and source pins be interchanged?
    Yes, the drain and source pins are interchangeable.
  7. What is the typical forward gate current for the PMBFJ308,215?
    The typical forward gate current (IG) is up to 50 mA.
  8. What are some common applications for the PMBFJ308,215?
    Common applications include audio and video equipment, industrial control systems, automotive electronics, and consumer electronics.
  9. What is the storage temperature range for the PMBFJ308,215?
    The storage temperature range is from -65 °C to 150 °C.
  10. What is the thermal resistance from junction to ambient for the PMBFJ308,215?
    The thermal resistance from junction to ambient (Rth(j-a)) is 500 K/W.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):12 mA @ 10 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):50 Ohms
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Same Series
PMBFJ308,215
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JFET N-CH 25V 250MW SOT23
PMBFJ310,215
PMBFJ310,215
JFET N-CH 25V 250MW SOT23

Similar Products

Part Number PMBFJ308,215 PMBFJ309,215 PMBFJ108,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V 25 V 25 V
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 12 mA @ 10 V 12 mA @ 10 V 80 mA @ 15 V
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 1 V @ 1 µA 1 V @ 1 µA 10 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V 5pF @ 10V 30pF @ 10V (VGS)
Resistance - RDS(On) 50 Ohms 50 Ohms 8 Ohms
Power - Max 250 mW 250 mW 250 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

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