MMBFJ113
  • Share:

onsemi MMBFJ113

Manufacturer No:
MMBFJ113
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 35V 350MW SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ113 is an N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. It is part of the J111, J112, and J113 series, which are known for their robust performance and versatility in various electronic applications.

The MMBFJ113 is available in the SOT-23 (TO-236) package, making it suitable for surface mount applications. It is a Pb-free device, adhering to environmental regulations and ensuring reliability in modern electronic designs.

Key Specifications

Parameter Value Unit
Drain-Gate Voltage (VDG) 35 V
Gate-Source Voltage (VGS) -35 V
Forward Gate Current (IGF) 50 mA
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to 150 °C
Total Device Dissipation (PD) 350 mW
Derate Above 25°C 2.8 mW/°C
Thermal Resistance, Junction-to-Case (RθJC) 125 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 357 °C/W
Gate-Source Breakdown Voltage (V(BR)GSS) -35 V
Gate-Source Cut-Off Voltage (VGS(off)) -0.5 to -3.0 V
Drain Cutoff Leakage Current (ID(off)) 1.0 nA
Zero-Gate Voltage Drain Current (IDSS) 2.0 mA
Drain-Source On Resistance (rDS(on)) 100 Ω

Key Features

  • Low-Level Analog Switching: Suitable for applications requiring low-level analog switching.
  • Sample and Hold Circuits: Ideal for sample and hold circuits due to its low noise and high input impedance.
  • Chopper Stabilized Amplifiers: Used in chopper stabilized amplifiers for precision and stability.
  • Interchangeable Source and Drain: The source and drain terminals are interchangeable, offering flexibility in circuit design.
  • Pb-Free and Surface Mount: Available in the SOT-23 package, making it Pb-free and suitable for surface mount applications.
  • Wide Operating Temperature Range: Operates over a temperature range of -55°C to 150°C, ensuring reliability in various environments.

Applications

  • Analog Switching Circuits: Used in low-level analog switching applications where high input impedance and low noise are crucial.
  • Sample and Hold Circuits: Employed in sample and hold circuits to maintain signal integrity.
  • Chopper Stabilized Amplifiers: Utilized in chopper stabilized amplifiers for precision and stability in amplifier designs.
  • Audio and Signal Processing: Suitable for audio and signal processing applications requiring low noise and high fidelity.
  • Industrial and Automotive Electronics: Used in various industrial and automotive electronic systems due to its robust performance and wide operating temperature range.

Q & A

  1. What is the maximum drain-gate voltage for the MMBFJ113?

    The maximum drain-gate voltage (VDG) for the MMBFJ113 is 35 V.

  2. What is the operating temperature range of the MMBFJ113?

    The operating and storage junction temperature range for the MMBFJ113 is -55°C to 150°C.

  3. What is the typical drain-source on resistance of the MMBFJ113?

    The typical drain-source on resistance (rDS(on)) for the MMBFJ113 is 100 Ω.

  4. Is the MMBFJ113 Pb-free?

    Yes, the MMBFJ113 is a Pb-free device, making it compliant with environmental regulations.

  5. What package type is the MMBFJ113 available in?

    The MMBFJ113 is available in the SOT-23 (TO-236) package.

  6. What are some common applications of the MMBFJ113?

    The MMBFJ113 is commonly used in low-level analog switching, sample and hold circuits, chopper stabilized amplifiers, and various industrial and automotive electronic systems.

  7. What is the maximum forward gate current for the MMBFJ113?

    The maximum forward gate current (IGF) for the MMBFJ113 is 50 mA.

  8. What is the gate-source cut-off voltage range for the MMBFJ113?

    The gate-source cut-off voltage (VGS(off)) range for the MMBFJ113 is -0.5 to -3.0 V.

  9. What is the thermal resistance, junction-to-ambient, for the MMBFJ113?

    The thermal resistance, junction-to-ambient (RθJA), for the MMBFJ113 is 357 °C/W.

  10. Can the source and drain terminals of the MMBFJ113 be interchanged?

    Yes, the source and drain terminals of the MMBFJ113 are interchangeable.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):35 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:500 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):100 Ohms
Power - Max:350 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.49
1,406

Please send RFQ , we will respond immediately.

Same Series
J111-D74Z
J111-D74Z
JFET N-CH 35V 625MW TO92-3
J111
J111
JFET N-CH 35V 625MW TO92-3
J112-D74Z
J112-D74Z
JFET N-CH 35V 625MW TO92
MMBFJ111
MMBFJ111
JFET N-CH 35V 350MW SOT23-3
MMBFJ113
MMBFJ113
JFET N-CH 35V 350MW SOT23
MMBFJ112
MMBFJ112
JFET N-CH 35V 0.35W SOT-23
J113_D26Z
J113_D26Z
JFET N-CH 35V 625MW TO92
J113_D75Z
J113_D75Z
JFET N-CH 35V 625MW TO92
J111_D75Z
J111_D75Z
JFET N-CH 35V 625MW TO92
J113_D27Z
J113_D27Z
JFET N-CH 35V 625MW TO92
J111_D27Z
J111_D27Z
JFET N-CH 35V 625MW TO92
J112_D11Z
J112_D11Z
JFET N-CH 35V 625MW TO92

Similar Products

Part Number MMBFJ113 MMBFJ110 MMBFJ111 MMBFJ112
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V 25 V 35 V 35 V
Drain to Source Voltage (Vdss) - - - -
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V 10 mA @ 15 V 20 mA @ 15 V 5 mA @ 15 V
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA 4 V @ 10 nA 3 V @ 1 µA 1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds - - - -
Resistance - RDS(On) 100 Ohms 18 Ohms 30 Ohms 50 Ohms
Power - Max 350 mW 460 mW 350 mW 350 mW
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3

Related Product By Categories

MMBFJ175LT1G
MMBFJ175LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBF4117
MMBF4117
onsemi
JFET N-CH 40V 0.225W SOT23
MMBFJ176
MMBFJ176
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBFJ175
MMBFJ175
Fairchild Semiconductor
P-CHANNEL JFET, TO-236AB
MMBFJ175LT3G
MMBFJ175LT3G
onsemi
JFET P-CH 30V 0.225W SOT23
BFR30,215
BFR30,215
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
PMBFJ177,215
PMBFJ177,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
PMBFJ174,215
PMBFJ174,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
MMBF5457LT1
MMBF5457LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
MMBF5484LT1G
MMBF5484LT1G
onsemi
JFET N-CH 25V 0.225W SOT23
BFR30LT1
BFR30LT1
onsemi
JFET N-CH 225MW SOT23
MMBFJ201_G
MMBFJ201_G
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE