MMBFJ113
  • Share:

onsemi MMBFJ113

Manufacturer No:
MMBFJ113
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 35V 350MW SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ113 is an N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. It is part of the J111, J112, and J113 series, which are known for their robust performance and versatility in various electronic applications.

The MMBFJ113 is available in the SOT-23 (TO-236) package, making it suitable for surface mount applications. It is a Pb-free device, adhering to environmental regulations and ensuring reliability in modern electronic designs.

Key Specifications

Parameter Value Unit
Drain-Gate Voltage (VDG) 35 V
Gate-Source Voltage (VGS) -35 V
Forward Gate Current (IGF) 50 mA
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to 150 °C
Total Device Dissipation (PD) 350 mW
Derate Above 25°C 2.8 mW/°C
Thermal Resistance, Junction-to-Case (RθJC) 125 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 357 °C/W
Gate-Source Breakdown Voltage (V(BR)GSS) -35 V
Gate-Source Cut-Off Voltage (VGS(off)) -0.5 to -3.0 V
Drain Cutoff Leakage Current (ID(off)) 1.0 nA
Zero-Gate Voltage Drain Current (IDSS) 2.0 mA
Drain-Source On Resistance (rDS(on)) 100 Ω

Key Features

  • Low-Level Analog Switching: Suitable for applications requiring low-level analog switching.
  • Sample and Hold Circuits: Ideal for sample and hold circuits due to its low noise and high input impedance.
  • Chopper Stabilized Amplifiers: Used in chopper stabilized amplifiers for precision and stability.
  • Interchangeable Source and Drain: The source and drain terminals are interchangeable, offering flexibility in circuit design.
  • Pb-Free and Surface Mount: Available in the SOT-23 package, making it Pb-free and suitable for surface mount applications.
  • Wide Operating Temperature Range: Operates over a temperature range of -55°C to 150°C, ensuring reliability in various environments.

Applications

  • Analog Switching Circuits: Used in low-level analog switching applications where high input impedance and low noise are crucial.
  • Sample and Hold Circuits: Employed in sample and hold circuits to maintain signal integrity.
  • Chopper Stabilized Amplifiers: Utilized in chopper stabilized amplifiers for precision and stability in amplifier designs.
  • Audio and Signal Processing: Suitable for audio and signal processing applications requiring low noise and high fidelity.
  • Industrial and Automotive Electronics: Used in various industrial and automotive electronic systems due to its robust performance and wide operating temperature range.

Q & A

  1. What is the maximum drain-gate voltage for the MMBFJ113?

    The maximum drain-gate voltage (VDG) for the MMBFJ113 is 35 V.

  2. What is the operating temperature range of the MMBFJ113?

    The operating and storage junction temperature range for the MMBFJ113 is -55°C to 150°C.

  3. What is the typical drain-source on resistance of the MMBFJ113?

    The typical drain-source on resistance (rDS(on)) for the MMBFJ113 is 100 Ω.

  4. Is the MMBFJ113 Pb-free?

    Yes, the MMBFJ113 is a Pb-free device, making it compliant with environmental regulations.

  5. What package type is the MMBFJ113 available in?

    The MMBFJ113 is available in the SOT-23 (TO-236) package.

  6. What are some common applications of the MMBFJ113?

    The MMBFJ113 is commonly used in low-level analog switching, sample and hold circuits, chopper stabilized amplifiers, and various industrial and automotive electronic systems.

  7. What is the maximum forward gate current for the MMBFJ113?

    The maximum forward gate current (IGF) for the MMBFJ113 is 50 mA.

  8. What is the gate-source cut-off voltage range for the MMBFJ113?

    The gate-source cut-off voltage (VGS(off)) range for the MMBFJ113 is -0.5 to -3.0 V.

  9. What is the thermal resistance, junction-to-ambient, for the MMBFJ113?

    The thermal resistance, junction-to-ambient (RθJA), for the MMBFJ113 is 357 °C/W.

  10. Can the source and drain terminals of the MMBFJ113 be interchanged?

    Yes, the source and drain terminals of the MMBFJ113 are interchangeable.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):35 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:500 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):100 Ohms
Power - Max:350 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.49
1,406

Please send RFQ , we will respond immediately.

Same Series
J111-D74Z
J111-D74Z
JFET N-CH 35V 625MW TO92-3
J112-D26Z
J112-D26Z
JFET N-CH 35V 625MW TO92-3
J111
J111
JFET N-CH 35V 625MW TO92-3
J112-D74Z
J112-D74Z
JFET N-CH 35V 625MW TO92
MMBFJ111
MMBFJ111
JFET N-CH 35V 350MW SOT23-3
MMBFJ113
MMBFJ113
JFET N-CH 35V 350MW SOT23
MMBFJ112
MMBFJ112
JFET N-CH 35V 0.35W SOT-23
J112-D27Z
J112-D27Z
JFET N-CH 35V 625MW TO92-3
J113_D26Z
J113_D26Z
JFET N-CH 35V 625MW TO92
J111_D75Z
J111_D75Z
JFET N-CH 35V 625MW TO92
J111_D27Z
J111_D27Z
JFET N-CH 35V 625MW TO92
J112_D11Z
J112_D11Z
JFET N-CH 35V 625MW TO92

Similar Products

Part Number MMBFJ113 MMBFJ110 MMBFJ111 MMBFJ112
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V 25 V 35 V 35 V
Drain to Source Voltage (Vdss) - - - -
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V 10 mA @ 15 V 20 mA @ 15 V 5 mA @ 15 V
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA 4 V @ 10 nA 3 V @ 1 µA 1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds - - - -
Resistance - RDS(On) 100 Ohms 18 Ohms 30 Ohms 50 Ohms
Power - Max 350 mW 460 mW 350 mW 350 mW
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3

Related Product By Categories

MMBFJ177LT1G
MMBFJ177LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBF4392LT1G
MMBF4392LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBFJ175LT1G
MMBFJ175LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBF4393LT1G
MMBF4393LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MCH3914-7-TL-H
MCH3914-7-TL-H
onsemi
JFET N-CH 50MA 300MW SC70FL/MCPH
MMBFJ108
MMBFJ108
onsemi
JFET N-CH 25V 350MW SSOT3
PMBFJ308,215
PMBFJ308,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
BFR30,235
BFR30,235
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
PMBFJ310,215
PMBFJ310,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBFJ109,215
PMBFJ109,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
MMBF4416LT1
MMBF4416LT1
onsemi
MOSFET SS N-CHAN VHF 30V SOT23
BFR30LT1G
BFR30LT1G
onsemi
JFET N-CH 225MW SOT23

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK