BFR30LT1
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onsemi BFR30LT1

Manufacturer No:
BFR30LT1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 225MW SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR30LT1 is a high-frequency, low-noise N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This component is designed for applications requiring low noise and high gain, making it suitable for various electronic circuits, particularly in audio and RF applications.

The BFR30LT1 is available in the SOT-23 package and is lead-free, complying with current environmental standards. It is widely used in amplification and switching tasks due to its excellent electrical characteristics and thermal performance.

Key Specifications

Characteristic Symbol Min Max Unit
Gate Reverse Current IGSS - 0.2 nAdc
Gate Source Cutoff Voltage VGS(OFF) - 5.0 Vdc
Zero-Gate-Voltage Drain Current IDSS 4.0 10 mAdc
Forward Transconductance gfs 1.0 4.0 mmhos
Input Capacitance Ciss - 5.0 pF
Reverse Transfer Capacitance Crss - 1.5 pF
Junction and Storage Temperature TJ, Tstg -55 150 °C
Thermal Resistance, Junction-to-Ambient RJA - 417 °C/W

Key Features

  • Low Noise Operation: The BFR30LT1 is known for its low noise characteristics, making it ideal for audio and RF applications.
  • High Gain: It offers high forward transconductance, which is essential for amplification tasks.
  • High Frequency Capability: Suitable for high-frequency applications due to its good small-signal characteristics.
  • Lead-Free Packaging: Available in SOT-23 lead-free packages, complying with environmental regulations.
  • Wide Temperature Range: Operates over a wide junction and storage temperature range from -55°C to 150°C.

Applications

  • Audio Amplification: Used in audio amplifiers and preamplifiers due to its low noise and high gain characteristics.
  • RF Circuits: Utilized in radio frequency applications for tasks such as oscillation, amplification, and modulation.
  • Switching Tasks: Employed in switching loads under 150mA, such as relays, small motors, or LEDs.
  • Signal Processing: Suitable for signal processing applications requiring low noise and high fidelity.
  • Push-Pull Configuration Circuits: Applied in push-pull amplifier configurations to improve efficiency and reduce distortion.

Q & A

  1. What is the BFR30LT1?

    The BFR30LT1 is a high-frequency, low-noise N-Channel JFET produced by onsemi.

  2. What package type is the BFR30LT1 available in?

    The BFR30LT1 is available in the SOT-23 package.

  3. What are the key electrical characteristics of the BFR30LT1?

    Key characteristics include low gate reverse current, high forward transconductance, and low input capacitance.

  4. What is the thermal resistance of the BFR30LT1?

    The thermal resistance, junction-to-ambient, is 417°C/W.

  5. What is the operating temperature range of the BFR30LT1?

    The junction and storage temperature range is from -55°C to 150°C.

  6. What are some common applications of the BFR30LT1?

    Common applications include audio amplification, RF circuits, switching tasks, and signal processing.

  7. Is the BFR30LT1 lead-free?

    Yes, the BFR30LT1 is available in lead-free packaging.

  8. What is the maximum drain current for the BFR30LT1?

    The zero-gate-voltage drain current (IDSS) is up to 10 mA.

  9. How does the BFR30LT1 perform in high-frequency applications?

    The BFR30LT1 has good small-signal characteristics, making it suitable for high-frequency applications.

  10. Where can I find detailed specifications for the BFR30LT1?

    Detailed specifications can be found in the datasheet available on the onsemi website or through authorized distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):- 
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):4 mA @ 10 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):- 
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
BFR30LT1G
BFR30LT1G
JFET N-CH 225MW SOT23
BFR31LT1
BFR31LT1
JFET N-CH 225MW SOT23
BFR31LT1G
BFR31LT1G
JFET N-CH 225MW SOT23

Similar Products

Part Number BFR30LT1 BFR30LT1G BFR31LT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) - - -
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 4 mA @ 10 V 4 mA @ 10 V 1 mA @ 10 V
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 5 V @ 0.5 nA 5 V @ 0.5 nA 2.5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V 5pF @ 10V 5pF @ 10V
Resistance - RDS(On) - - -
Power - Max 225 mW 225 mW 225 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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