BAS16L,315
  • Share:

Nexperia USA Inc. BAS16L,315

Manufacturer No:
BAS16L,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 215MA SOD882
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16L,315 is a high-speed switching diode produced by Nexperia USA Inc. This component is encapsulated in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package. It is designed for high-speed switching applications and is known for its compact size and efficient performance.

Key Specifications

Attribute Value
Reverse Voltage - Max (Vrrm) 100 V
Reverse Recovery Time - Max 4 ns
Power Dissipation 250 mW
Average Forward Current - Max 215 mA
Peak Current - Max 500 mA
Package Style SOD-882
Mounting Method Surface Mount
Operating Temperature - Junction 150°C
Capacitance @ Vr, F 1.5 pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA

Key Features

  • High-speed switching capability with a reverse recovery time of 4 ns.
  • Compact SOD882 package, ideal for space-constrained designs.
  • Low forward voltage drop (Vf) of 1.25 V at 150 mA.
  • Low reverse leakage current of 500 nA at 80 V.
  • High operating junction temperature of up to 150°C.
  • RoHS compliant and suitable for automotive and industrial applications.

Applications

The BAS16L,315 high-speed switching diode is versatile and finds applications across various industries, including:

  • Automotive: For high-reliability and high-temperature applications.
  • Industrial: In power supplies, motor control, and other industrial electronics.
  • Consumer Electronics: In devices requiring fast switching and low power consumption.
  • Power and Computing: For efficient power management and high-speed data transmission.

Q & A

  1. Q: What is the maximum reverse voltage of the BAS16L,315 diode?

    A: The maximum reverse voltage (Vrrm) is 100 V.

  2. Q: What is the reverse recovery time of the BAS16L,315 diode?

    A: The reverse recovery time is 4 ns.

  3. Q: What is the average forward current rating of the BAS16L,315 diode?

    A: The average forward current rating is 215 mA.

  4. Q: What is the package style of the BAS16L,315 diode?

    A: The package style is SOD-882.

  5. Q: Is the BAS16L,315 diode RoHS compliant?

    A: Yes, the BAS16L,315 diode is RoHS compliant.

  6. Q: What is the operating junction temperature of the BAS16L,315 diode?

    A: The operating junction temperature is up to 150°C.

  7. Q: What are the typical applications of the BAS16L,315 diode?

    A: Typical applications include automotive, industrial, consumer electronics, and power management.

  8. Q: How much power can the BAS16L,315 diode dissipate?

    A: The power dissipation is 250 mW.

  9. Q: What is the forward voltage drop (Vf) of the BAS16L,315 diode at 150 mA?

    A: The forward voltage drop (Vf) is 1.25 V at 150 mA.

  10. Q: Is the BAS16L,315 diode suitable for high-speed switching applications?

    A: Yes, it is designed for high-speed switching applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-882
Supplier Device Package:DFN1006-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.26
3,197

Please send RFQ , we will respond immediately.

Same Series
BAS16VY,165
BAS16VY,165
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16VV,115
BAS16VV,115
DIODE ARRAY GP 100V 200MA SOT666
BAS16VY,135
BAS16VY,135
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16,235
BAS16,235
DIODE GP 100V 215MA TO236AB
BAS16,215
BAS16,215
DIODE GP 100V 215MA TO236AB
BAS516,135
BAS516,135
DIODE GEN PURP 100V 250MA SOD523
BAS516,115
BAS516,115
DIODE GEN PURP 100V 250MA SOD523
BAS316,115
BAS316,115
DIODE GEN PURP 100V 250MA SOD323
BAS316,135
BAS316,135
DIODE GEN PURP 100V 250MA SOD323
BAS316Z
BAS316Z
DIODE GEN PURP 100V 250MA SC76-2
BAS16W,115
BAS16W,115
DIODE GEN PURP 100V 175MA SOT323
BAS16WF
BAS16WF
DIODE GEN PURP 100V 175MA SOT323

Similar Products

Part Number BAS16L,315 BAS16LD,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 215mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-882 2-XDFN
Supplier Device Package DFN1006-2 DFN1006D-2
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BC846A-QVL
BC846A-QVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
PMV65XP,215
PMV65XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74LVC16245ADGG,118
74LVC16245ADGG,118
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 48TSSOP
74HC244D-Q100,118
74HC244D-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC