BAS16L,315
  • Share:

Nexperia USA Inc. BAS16L,315

Manufacturer No:
BAS16L,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 215MA SOD882
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16L,315 is a high-speed switching diode produced by Nexperia USA Inc. This component is encapsulated in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package. It is designed for high-speed switching applications and is known for its compact size and efficient performance.

Key Specifications

Attribute Value
Reverse Voltage - Max (Vrrm) 100 V
Reverse Recovery Time - Max 4 ns
Power Dissipation 250 mW
Average Forward Current - Max 215 mA
Peak Current - Max 500 mA
Package Style SOD-882
Mounting Method Surface Mount
Operating Temperature - Junction 150°C
Capacitance @ Vr, F 1.5 pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA

Key Features

  • High-speed switching capability with a reverse recovery time of 4 ns.
  • Compact SOD882 package, ideal for space-constrained designs.
  • Low forward voltage drop (Vf) of 1.25 V at 150 mA.
  • Low reverse leakage current of 500 nA at 80 V.
  • High operating junction temperature of up to 150°C.
  • RoHS compliant and suitable for automotive and industrial applications.

Applications

The BAS16L,315 high-speed switching diode is versatile and finds applications across various industries, including:

  • Automotive: For high-reliability and high-temperature applications.
  • Industrial: In power supplies, motor control, and other industrial electronics.
  • Consumer Electronics: In devices requiring fast switching and low power consumption.
  • Power and Computing: For efficient power management and high-speed data transmission.

Q & A

  1. Q: What is the maximum reverse voltage of the BAS16L,315 diode?

    A: The maximum reverse voltage (Vrrm) is 100 V.

  2. Q: What is the reverse recovery time of the BAS16L,315 diode?

    A: The reverse recovery time is 4 ns.

  3. Q: What is the average forward current rating of the BAS16L,315 diode?

    A: The average forward current rating is 215 mA.

  4. Q: What is the package style of the BAS16L,315 diode?

    A: The package style is SOD-882.

  5. Q: Is the BAS16L,315 diode RoHS compliant?

    A: Yes, the BAS16L,315 diode is RoHS compliant.

  6. Q: What is the operating junction temperature of the BAS16L,315 diode?

    A: The operating junction temperature is up to 150°C.

  7. Q: What are the typical applications of the BAS16L,315 diode?

    A: Typical applications include automotive, industrial, consumer electronics, and power management.

  8. Q: How much power can the BAS16L,315 diode dissipate?

    A: The power dissipation is 250 mW.

  9. Q: What is the forward voltage drop (Vf) of the BAS16L,315 diode at 150 mA?

    A: The forward voltage drop (Vf) is 1.25 V at 150 mA.

  10. Q: Is the BAS16L,315 diode suitable for high-speed switching applications?

    A: Yes, it is designed for high-speed switching applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-882
Supplier Device Package:DFN1006-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.26
3,197

Please send RFQ , we will respond immediately.

Same Series
BAS16,235
BAS16,235
DIODE GP 100V 215MA TO236AB
BAS16,215
BAS16,215
DIODE GP 100V 215MA TO236AB
BAS16L,315
BAS16L,315
DIODE GEN PURP 100V 215MA SOD882
BAS516,315
BAS516,315
DIODE GEN PURP 100V 250MA SOD523
BAS516,135
BAS516,135
DIODE GEN PURP 100V 250MA SOD523
BAS516,115
BAS516,115
DIODE GEN PURP 100V 250MA SOD523
BAS316,135
BAS316,135
DIODE GEN PURP 100V 250MA SOD323
BAS316Z
BAS316Z
DIODE GEN PURP 100V 250MA SC76-2
BAS16W,115
BAS16W,115
DIODE GEN PURP 100V 175MA SOT323
BAS16H,115
BAS16H,115
DIODE GP 100V 215MA SOD123F
BAS16J,135
BAS16J,135
DIODE GP 100V 250MA SOD323F
BAS16J,115
BAS16J,115
DIODE GP 100V 250MA SOD323F

Similar Products

Part Number BAS16L,315 BAS16LD,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 215mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-882 2-XDFN
Supplier Device Package DFN1006-2 DFN1006D-2
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
PMST3904/ZLF
PMST3904/ZLF
Nexperia USA Inc.
PMST3904/ZLF
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74HC11D,653
74HC11D,653
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SO
74AHC1G04GV-Q100H
74AHC1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A