BAV21W-E3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAV21W-E3-08

Manufacturer No:
BAV21W-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21W-E3-08 is a small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose, power, and switching applications. It features a silicon-based construction and is packaged in a ROHS compliant SOD-123 package. The diode is known for its fast recovery time and low forward voltage, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Value
Manufacturer Vishay General Semiconductor - Diodes Division
Part Number BAV21W-E3-08
Description Rectifier Diode, Silicon-based, 1 Element, 0.2A, 250V VRRM
Package / Case SOD-123
Voltage - DC Reverse (Vr) (Max) 250 V
Current - Average Rectified (Io) 250 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA
Speed Fast Recovery <= 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V
Capacitance @ Vr, F 1.5 pF @ 0V, 1MHz
Operating Temperature - Junction -55°C to 150°C
Power Dissipation-Max 0.41 W
Mounting Type Surface Mount
Terminal Finish Matte Tin (Sn)

Key Features

  • Fast Recovery Time: Less than 500 ns, making it suitable for high-frequency applications.
  • Low Forward Voltage: Maximum forward voltage of 1 V at 100 mA, reducing power losses.
  • High Reverse Voltage: Maximum reverse voltage of 250 V, providing robust protection against reverse voltage.
  • Low Reverse Leakage Current: 100 nA at 150 V, minimizing standby power consumption.
  • Surface Mount Package: SOD-123 package, facilitating easy integration into surface mount technology (SMT) assembly lines.
  • ROHS Compliant: Ensures environmental compliance and reduces the risk of hazardous substances.

Applications

  • General Purpose Rectification: Suitable for various rectification needs in electronic circuits.
  • Polarity Protection: Can be used to protect circuits from incorrect polarity connections.
  • Signal Switching: Ideal for switching and signal processing applications due to its fast recovery time.
  • Automotive and Industrial Systems: Qualified for use in automotive and industrial environments due to its robust specifications and compliance with standards like AEC-Q101.
  • Consumer Electronics: Used in a wide range of consumer electronic devices requiring reliable and efficient diode performance.

Q & A

  1. What is the maximum reverse voltage of the BAV21W-E3-08 diode?

    The maximum reverse voltage (Vr) of the BAV21W-E3-08 diode is 250 V.

  2. What is the average rectified current (Io) of the BAV21W-E3-08 diode?

    The average rectified current (Io) of the BAV21W-E3-08 diode is 250 mA.

  3. What is the forward voltage (Vf) of the BAV21W-E3-08 diode at 100 mA?

    The forward voltage (Vf) of the BAV21W-E3-08 diode at 100 mA is 1 V.

  4. What is the recovery time of the BAV21W-E3-08 diode?

    The recovery time of the BAV21W-E3-08 diode is less than 500 ns.

  5. What is the operating temperature range of the BAV21W-E3-08 diode?

    The operating temperature range of the BAV21W-E3-08 diode is from -55°C to 150°C.

  6. Is the BAV21W-E3-08 diode ROHS compliant?

    Yes, the BAV21W-E3-08 diode is ROHS compliant.

  7. What is the package type of the BAV21W-E3-08 diode?

    The BAV21W-E3-08 diode is packaged in a SOD-123 surface mount package.

  8. What is the maximum power dissipation of the BAV21W-E3-08 diode?

    The maximum power dissipation of the BAV21W-E3-08 diode is 0.41 W.

  9. Is the BAV21W-E3-08 diode suitable for automotive applications?

    Yes, the BAV21W-E3-08 diode is qualified for automotive applications and meets the AEC-Q101 standard.

  10. What is the reverse leakage current of the BAV21W-E3-08 diode at 150 V?

    The reverse leakage current of the BAV21W-E3-08 diode at 150 V is 100 nA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.29
2,522

Please send RFQ , we will respond immediately.

Same Series
BAV21W-E3-08
BAV21W-E3-08
DIODE GEN PURP 200V 250MA SOD123
BAV20W-HE3-18
BAV20W-HE3-18
DIODE GEN PURP 150V 250MA SOD123
BAV20W-E3-08
BAV20W-E3-08
DIODE GEN PURP 150V 250MA SOD123
BAV20W-HE3-08
BAV20W-HE3-08
DIODE GEN PURP 150V 250MA SOD123
BAV20W-E3-18
BAV20W-E3-18
DIODE GEN PURP 150V 250MA SOD123
BAV21W-E3-18
BAV21W-E3-18
DIODE GEN PURP 200V 250MA SOD123
BAV19W-E3-08
BAV19W-E3-08
DIODE GEN PURP 100V 250MA SOD123
BAV19W-E3-18
BAV19W-E3-18
DIODE GEN PURP 100V 250MA SOD123
BAV19W-HE3-18
BAV19W-HE3-18
DIODE GEN PURP 100V 250MA SOD123
BAV21W-HE3-18
BAV21W-HE3-18
DIODE GEN PURP 200V 250MA SOD123
BAV19W-HE3-08
BAV19W-HE3-08
DIODE GEN PURP 100V 250MA SOD123

Similar Products

Part Number BAV21W-E3-08 BAV21WS-E3-08 BAV21W-G3-08 BAV21W-HE3-08 BAV21W-E3-18 BAV20W-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V 200 V 150 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1.25 V @ 200 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 150 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SC-76, SOD-323 SOD-123 SOD-123 SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-323 SOD-123 SOD-123 SOD-123 SOD-123
Operating Temperature - Junction 175°C (Max) 150°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 150°C (Max)

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

SM15T33A-M3/9AT
SM15T33A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T12AHM3_A/H
SM15T12AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM6T220AHM3/I
SM6T220AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
MBR10100CT-E3/45
MBR10100CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
BAT54C-BO-G3-18
BAT54C-BO-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHTKY DL 30V 200MA SOT23
1N4148WS-HE3-18
1N4148WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
1N4007-E3/54
1N4007-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C16-E3-08
BZX84C16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX384C15-G3-08
BZX384C15-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX84C4V7-E3-18
BZX84C4V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3