BAV21W-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAV21W-G3-08

Manufacturer No:
BAV21W-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21W-G3-08 is a general-purpose small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for various applications requiring high voltage and low current switching. It is part of the BAV21W series, which is known for its reliability and performance in automotive, industrial, and consumer electronics.

The BAV21W-G3-08 is AEC-Q101 qualified, ensuring it meets the stringent standards for automotive applications. It features a compact SOD-123 package, making it suitable for surface mount technology (SMT) and offering a space-efficient solution for modern electronic designs.

Key Specifications

Parameter Value Unit
Continuous Reverse Voltage (VR) 200 V
Repetitive Peak Reverse Voltage (VRRM) 250 V
DC Forward Current (IF) 300 mA
Average Rectified Current (IF(AV)) 200 mA
Repetitive Peak Forward Current (IFRM) 625 mA
Surge Forward Current (IFSM) 1 A
Forward Voltage (VF) @ IF = 100 mA 1 V
Reverse Leakage Current (IR) @ VR = 200 V 100 nA
Reverse Recovery Time (trr) 50 ns
Diode Capacitance (CD) @ VR = 0 V, f = 1 MHz 0.5 pF
Operating Temperature - Junction 175°C
Package / Case SOD-123
Mounting Type Surface Mount

Key Features

  • AEC-Q101 Qualified: Meets automotive industry standards for reliability and performance.
  • High Voltage Capability: Continuous reverse voltage of 200 V and repetitive peak reverse voltage of 250 V.
  • Low Forward Voltage: Forward voltage of 1 V at 100 mA, ensuring low power loss.
  • Fast Recovery Time: Reverse recovery time of 50 ns, suitable for high-speed switching applications.
  • Compact Package: SOD-123 package for surface mount technology, optimizing space in modern designs.
  • High Surge Current Capability: Surge forward current of 1 A, providing robustness against transient conditions.

Applications

  • Automotive Electronics: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Electronics: Used in industrial control systems, power supplies, and other high-reliability applications.
  • Consumer Electronics: Found in consumer devices requiring high voltage and low current switching, such as TV sets, audio equipment, and more.
  • Rectification and Polarity Protection: Ideal for rectification, polarity protection, or signal switching in various electronic circuits.

Q & A

  1. What is the continuous reverse voltage rating of the BAV21W-G3-08?

    The continuous reverse voltage rating is 200 V.

  2. What is the maximum forward current for the BAV21W-G3-08?

    The maximum DC forward current is 300 mA.

  3. What is the reverse recovery time of the BAV21W-G3-08?

    The reverse recovery time is 50 ns.

  4. Is the BAV21W-G3-08 AEC-Q101 qualified?
  5. What is the package type of the BAV21W-G3-08?

    The package type is SOD-123.

  6. What is the maximum junction temperature for the BAV21W-G3-08?

    The maximum junction temperature is 175°C.

  7. What is the typical forward voltage at 100 mA for the BAV21W-G3-08?

    The typical forward voltage at 100 mA is 1 V.

  8. What is the diode capacitance at 0 V and 1 MHz for the BAV21W-G3-08?

    The diode capacitance is 0.5 pF.

  9. Is the BAV21W-G3-08 suitable for surface mount technology?
  10. What is the surge forward current rating of the BAV21W-G3-08?

    The surge forward current rating is 1 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.33
1,547

Please send RFQ , we will respond immediately.

Same Series
BAV21W-G3-08
BAV21W-G3-08
DIODE GEN PURP 200V 250MA SOD123
BAV19W-G3-18
BAV19W-G3-18
DIODE GEN PURP 100V 250MA SOD123
BAV20W-G3-18
BAV20W-G3-18
DIODE GEN PURP 150V 250MA SOD123
BAV19W-G3-08
BAV19W-G3-08
DIODE GEN PURP 100V 250MA SOD123
BAV20W-G3-08
BAV20W-G3-08
DIODE GEN PURP 150V 250MA SOD123

Similar Products

Part Number BAV21W-G3-08 BAV21WS-G3-08 BAV21W-G3-18 BAV20W-G3-08 BAV21W-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1.25 V @ 200 mA 1 V @ 100 mA 1.25 V @ 200 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 150 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SC-76, SOD-323 SOD-123 SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-323 SOD-123 SOD-123 SOD-123
Operating Temperature - Junction 175°C (Max) 150°C (Max) 175°C (Max) 150°C (Max) 175°C (Max)

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM15T12A-E3/9AT
SM15T12A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T7V5A-E3/57T
SM15T7V5A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM15T150CAHE3_A/I
SM15T150CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T15CAHE3/5B
SM6T15CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T39CAHE3/57T
SM15T39CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T22CAHM3_A/I
SM15T22CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
MBR10100CT-E3/45
MBR10100CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
SS14HE3_B/I
SS14HE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3