BAV21W-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAV21W-G3-18

Manufacturer No:
BAV21W-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21W-G3-18 is a general-purpose small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAV21W-G series and is known for its high voltage and current handling capabilities, making it suitable for a wide range of electronic applications. The device is packaged in a SOD-123 case and is available in tape and reel format, facilitating easy integration into surface mount assembly processes.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Voltage - Forward (Vf) (Max) @ If 1 @ 100 mA V
Current - Average Rectified (Io) 250 mA
Current - Reverse Leakage @ Vr 100 nA @ 200 V nA
Repetitive Peak Forward Current (IFRM) 625 mA
Surge Forward Current (IFSM) 1 A
Reverse Recovery Time (trr) 50 ns
Diode Capacitance @ Vr, F 1.5 pF @ 0 V, 1 MHz pF
Operating Temperature - Junction 175 °C
Package / Case SOD-123
Mounting Type Surface Mount

Key Features

  • High Voltage Handling: The BAV21W-G3-18 can handle a maximum DC reverse voltage of 200 V, making it suitable for applications requiring high voltage tolerance.
  • Fast Recovery Time: With a reverse recovery time of 50 ns, this diode is ideal for high-frequency applications.
  • Low Forward Voltage Drop: The diode has a forward voltage drop of 1 V at 100 mA, ensuring efficient operation.
  • Surface Mount Package: The SOD-123 package is designed for surface mount assembly, facilitating easy integration into modern PCB designs.
  • RoHS Compliant: The BAV21W-G3-18 is RoHS compliant, ensuring it meets environmental regulations.

Applications

  • General Purpose Rectification: Suitable for various rectification applications in power supplies, DC-DC converters, and other general-purpose circuits.
  • Switching Circuits: The fast recovery time makes it ideal for use in switching circuits, such as in power management and control systems.
  • High-Frequency Applications: The low reverse recovery time and high voltage handling capabilities make it suitable for high-frequency applications, including RF and microwave circuits.
  • Automotive and Industrial Systems: AEC-Q101 qualified versions are available upon request, making it suitable for automotive and industrial applications that require high reliability.

Q & A

  1. What is the maximum DC reverse voltage of the BAV21W-G3-18?

    The maximum DC reverse voltage is 200 V.

  2. What is the forward voltage drop at 100 mA for the BAV21W-G3-18?

    The forward voltage drop at 100 mA is 1 V.

  3. What is the reverse recovery time of the BAV21W-G3-18?

    The reverse recovery time is 50 ns.

  4. What is the package type of the BAV21W-G3-18?

    The package type is SOD-123.

  5. Is the BAV21W-G3-18 RoHS compliant?

    Yes, the BAV21W-G3-18 is RoHS compliant.

  6. What is the maximum junction temperature for the BAV21W-G3-18?

    The maximum junction temperature is 175°C.

  7. What is the average rectified current (Io) for the BAV21W-G3-18?

    The average rectified current (Io) is 250 mA.

  8. What is the surge forward current (IFSM) for the BAV21W-G3-18?

    The surge forward current (IFSM) is 1 A.

  9. Is the BAV21W-G3-18 suitable for high-frequency applications?

    Yes, the BAV21W-G3-18 is suitable for high-frequency applications due to its fast recovery time.

  10. Can the BAV21W-G3-18 be used in automotive applications?

    AEC-Q101 qualified versions are available upon request, making it suitable for automotive applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.04
18,586

Please send RFQ , we will respond immediately.

Same Series
BAV21W-G3-08
BAV21W-G3-08
DIODE GEN PURP 200V 250MA SOD123
BAV19W-G3-18
BAV19W-G3-18
DIODE GEN PURP 100V 250MA SOD123
BAV20W-G3-18
BAV20W-G3-18
DIODE GEN PURP 150V 250MA SOD123
BAV19W-G3-08
BAV19W-G3-08
DIODE GEN PURP 100V 250MA SOD123
BAV20W-G3-08
BAV20W-G3-08
DIODE GEN PURP 150V 250MA SOD123

Similar Products

Part Number BAV21W-G3-18 BAV21WS-G3-18 BAV20W-G3-18 BAV21W-E3-18 BAV21W-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 150 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SC-76, SOD-323 SOD-123 SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-323 SOD-123 SOD-123 SOD-123
Operating Temperature - Junction 175°C (Max) 150°C (Max) 150°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T22CAHM3_A/H
SM6T22CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
1.5KE6.8A-E3/73
1.5KE6.8A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T39CAHE3/52
SM6T39CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T200CAHM3_A/I
SM15T200CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM6T7V5CAHE3_A/I
SM6T7V5CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
BAT54C-E3-08
BAT54C-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70-E3-18
BAV70-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 125MA SOT23
MBR10100CT-E3/4W
MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
BYQ28E-200HE3/45
BYQ28E-200HE3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO220AB
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BZX84B10-G3-08
BZX84B10-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3