STPSC4H065DI
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STMicroelectronics STPSC4H065DI

Manufacturer No:
STPSC4H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 4A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC4H065DI is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. This 4 A, 650 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material and a 650 V rating. The Schottky construction of this diode eliminates reverse recovery charge and minimizes capacitive turn-off behavior, making it independent of temperature. This component is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability.

Key Specifications

Parameter Value Unit
Maximum Continuous Forward Current 4 A
Peak Reverse Repetitive Voltage 650 V
Junction Temperature (max) 175 °C
Operating Temperature Range -40 to 150 °C
Package Type TO-220AC Ins
Insulated Voltage 2500 V RMS
Typical Package Capacitance 7 pF
RoHS Compliance Grade Ecopack2

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package (TO-220AC Ins) with 2500 V RMS insulated voltage
  • Typical package capacitance of 7 pF
  • Power efficient product
  • ECOPACK2 compliant component

Applications

The STPSC4H065DI is especially recommended for use in Power Factor Correction (PFC) applications. Its high performance and robustness make it ideal for hard switching conditions, enhancing the overall efficiency and reliability of the system.

Q & A

  1. What is the maximum continuous forward current of the STPSC4H065DI?

    The maximum continuous forward current is 4 A.

  2. What is the peak reverse repetitive voltage of the STPSC4H065DI?

    The peak reverse repetitive voltage is 650 V.

  3. What is the junction temperature range for the STPSC4H065DI?

    The junction temperature range is up to 175°C.

  4. What type of package does the STPSC4H065DI come in?

    The STPSC4H065DI comes in a TO-220AC Ins package.

  5. Is the STPSC4H065DI RoHS compliant?

    Yes, the STPSC4H065DI is ECOPACK2 compliant and RoHS compliant.

  6. What is the typical package capacitance of the STPSC4H065DI?

    The typical package capacitance is 7 pF.

  7. What are the key applications for the STPSC4H065DI?

    The STPSC4H065DI is especially suited for Power Factor Correction (PFC) applications and hard switching conditions.

  8. Does the STPSC4H065DI have any reverse recovery charge?

    No, the STPSC4H065DI does not exhibit any reverse recovery charge in its application current range.

  9. Is the switching behavior of the STPSC4H065DI temperature-dependent?

    No, the switching behavior of the STPSC4H065DI is independent of temperature.

  10. What is the insulated voltage rating of the STPSC4H065DI package?

    The insulated voltage rating is 2500 V RMS.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
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In Stock

$3.01
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Same Series
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STPSC4H065DI
STPSC4H065DI
DIODE SCHOTTKY 650V 4A TO220AC

Similar Products

Part Number STPSC4H065DI STPSC6H065DI STPSC8H065DI STPSC4H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 4A 6A 8A 4A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 4 A 1.75 V @ 6 A 1.75 V @ 8 A 1.75 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 60 µA @ 650 V 80 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F - - - 200pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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