STPSC4H065DI
  • Share:

STMicroelectronics STPSC4H065DI

Manufacturer No:
STPSC4H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 4A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC4H065DI is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. This 4 A, 650 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material and a 650 V rating. The Schottky construction of this diode eliminates reverse recovery charge and minimizes capacitive turn-off behavior, making it independent of temperature. This component is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability.

Key Specifications

Parameter Value Unit
Maximum Continuous Forward Current 4 A
Peak Reverse Repetitive Voltage 650 V
Junction Temperature (max) 175 °C
Operating Temperature Range -40 to 150 °C
Package Type TO-220AC Ins
Insulated Voltage 2500 V RMS
Typical Package Capacitance 7 pF
RoHS Compliance Grade Ecopack2

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package (TO-220AC Ins) with 2500 V RMS insulated voltage
  • Typical package capacitance of 7 pF
  • Power efficient product
  • ECOPACK2 compliant component

Applications

The STPSC4H065DI is especially recommended for use in Power Factor Correction (PFC) applications. Its high performance and robustness make it ideal for hard switching conditions, enhancing the overall efficiency and reliability of the system.

Q & A

  1. What is the maximum continuous forward current of the STPSC4H065DI?

    The maximum continuous forward current is 4 A.

  2. What is the peak reverse repetitive voltage of the STPSC4H065DI?

    The peak reverse repetitive voltage is 650 V.

  3. What is the junction temperature range for the STPSC4H065DI?

    The junction temperature range is up to 175°C.

  4. What type of package does the STPSC4H065DI come in?

    The STPSC4H065DI comes in a TO-220AC Ins package.

  5. Is the STPSC4H065DI RoHS compliant?

    Yes, the STPSC4H065DI is ECOPACK2 compliant and RoHS compliant.

  6. What is the typical package capacitance of the STPSC4H065DI?

    The typical package capacitance is 7 pF.

  7. What are the key applications for the STPSC4H065DI?

    The STPSC4H065DI is especially suited for Power Factor Correction (PFC) applications and hard switching conditions.

  8. Does the STPSC4H065DI have any reverse recovery charge?

    No, the STPSC4H065DI does not exhibit any reverse recovery charge in its application current range.

  9. Is the switching behavior of the STPSC4H065DI temperature-dependent?

    No, the switching behavior of the STPSC4H065DI is independent of temperature.

  10. What is the insulated voltage rating of the STPSC4H065DI package?

    The insulated voltage rating is 2500 V RMS.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$3.01
135

Please send RFQ , we will respond immediately.

Same Series
STPSC4H065B-TR
STPSC4H065B-TR
DIODE SCHOTTKY 650V 4A DPAK
STPSC4H065DI
STPSC4H065DI
DIODE SCHOTTKY 650V 4A TO220AC

Similar Products

Part Number STPSC4H065DI STPSC6H065DI STPSC8H065DI STPSC4H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 4A 6A 8A 4A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 4 A 1.75 V @ 6 A 1.75 V @ 8 A 1.75 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 60 µA @ 650 V 80 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F - - - 200pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3