STPSC6H065DI
  • Share:

STMicroelectronics STPSC6H065DI

Manufacturer No:
STPSC6H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 6A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC6H065DI is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. This 6 A, 650 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with a 650 V rating. The Schottky construction eliminates reverse recovery charge and minimizes ringing patterns and capacitive turn-off behavior, making it independent of temperature. This diode is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability and robustness during transient phases.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 650 V
Average Forward Current (IF(AV)) 6 A
Forward RMS Current (IF(RMS)) 22 A
Surge Non-Repetitive Forward Current (IFSM) 60 (tp = 10 ms, Tc = 25°C) A
Maximum Junction Temperature (Tj(max)) 175 °C
Storage Temperature Range (Tstg) -55 to +175 °C
Junction to Case Thermal Resistance (Rth(j-c)) 2.9 (TO-220AC Ins) °C/W
Insulated Voltage (TO-220AC Ins) 2500 Vrms
Typical Package Capacitance 7 pF

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins with 2500 Vrms insulated voltage and typical package capacitance of 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • DC-DC converters
  • LLC topologies
  • Boost diode

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC6H065DI?

    The maximum repetitive peak reverse voltage (VRRM) is 650 V.

  2. What is the average forward current rating of the STPSC6H065DI?

    The average forward current (IF(AV)) is 6 A.

  3. What is the maximum junction temperature for the STPSC6H065DI?

    The maximum junction temperature (Tj(max)) is 175 °C.

  4. What is the insulated voltage rating for the TO-220AC Ins package?

    The insulated voltage rating for the TO-220AC Ins package is 2500 Vrms.

  5. Is the STPSC6H065DI suitable for high-frequency switching applications?

    Yes, the STPSC6H065DI is suitable for high-frequency switching applications due to its minimal capacitive turn-off behavior and switching behavior independent of temperature.

  6. What are the typical applications for the STPSC6H065DI?

    The STPSC6H065DI is typically used in switch mode power supplies, PFC applications, DC-DC converters, LLC topologies, and as a boost diode.

  7. Is the STPSC6H065DI ECOPACK®2 compliant?

    Yes, the STPSC6H065DI is ECOPACK®2 compliant.

  8. What is the forward surge capability of the STPSC6H065DI?

    The STPSC6H065DI has a high forward surge capability, with a surge non-repetitive forward current (IFSM) of 60 A for tp = 10 ms at Tc = 25°C.

  9. What is the storage temperature range for the STPSC6H065DI?

    The storage temperature range (Tstg) is -55 to +175 °C.

  10. What is the typical package capacitance of the STPSC6H065DI?

    The typical package capacitance is 7 pF.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 6 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:60 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.91
75

Please send RFQ , we will respond immediately.

Same Series
STPSC6H065DI
STPSC6H065DI
DIODE SCHOTTKY 650V 6A TO220AC
STPSC6H065B-TR
STPSC6H065B-TR
DIODE SCHOTTKY 650V 6A DPAK
STPSC6H065G-TR
STPSC6H065G-TR
DIODE SCHOTTKY 650V 6A D2PAK

Similar Products

Part Number STPSC6H065DI STPSC8H065DI STPSC4H065DI STPSC6H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 6A 8A 4A 6A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 6 A 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V 80 µA @ 650 V 40 µA @ 650 V 60 µA @ 650 V
Capacitance @ Vr, F - - - 300pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC