STPSC6H065DI
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STMicroelectronics STPSC6H065DI

Manufacturer No:
STPSC6H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 6A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC6H065DI is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. This 6 A, 650 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with a 650 V rating. The Schottky construction eliminates reverse recovery charge and minimizes ringing patterns and capacitive turn-off behavior, making it independent of temperature. This diode is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability and robustness during transient phases.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 650 V
Average Forward Current (IF(AV)) 6 A
Forward RMS Current (IF(RMS)) 22 A
Surge Non-Repetitive Forward Current (IFSM) 60 (tp = 10 ms, Tc = 25°C) A
Maximum Junction Temperature (Tj(max)) 175 °C
Storage Temperature Range (Tstg) -55 to +175 °C
Junction to Case Thermal Resistance (Rth(j-c)) 2.9 (TO-220AC Ins) °C/W
Insulated Voltage (TO-220AC Ins) 2500 Vrms
Typical Package Capacitance 7 pF

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins with 2500 Vrms insulated voltage and typical package capacitance of 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • DC-DC converters
  • LLC topologies
  • Boost diode

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC6H065DI?

    The maximum repetitive peak reverse voltage (VRRM) is 650 V.

  2. What is the average forward current rating of the STPSC6H065DI?

    The average forward current (IF(AV)) is 6 A.

  3. What is the maximum junction temperature for the STPSC6H065DI?

    The maximum junction temperature (Tj(max)) is 175 °C.

  4. What is the insulated voltage rating for the TO-220AC Ins package?

    The insulated voltage rating for the TO-220AC Ins package is 2500 Vrms.

  5. Is the STPSC6H065DI suitable for high-frequency switching applications?

    Yes, the STPSC6H065DI is suitable for high-frequency switching applications due to its minimal capacitive turn-off behavior and switching behavior independent of temperature.

  6. What are the typical applications for the STPSC6H065DI?

    The STPSC6H065DI is typically used in switch mode power supplies, PFC applications, DC-DC converters, LLC topologies, and as a boost diode.

  7. Is the STPSC6H065DI ECOPACK®2 compliant?

    Yes, the STPSC6H065DI is ECOPACK®2 compliant.

  8. What is the forward surge capability of the STPSC6H065DI?

    The STPSC6H065DI has a high forward surge capability, with a surge non-repetitive forward current (IFSM) of 60 A for tp = 10 ms at Tc = 25°C.

  9. What is the storage temperature range for the STPSC6H065DI?

    The storage temperature range (Tstg) is -55 to +175 °C.

  10. What is the typical package capacitance of the STPSC6H065DI?

    The typical package capacitance is 7 pF.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 6 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:60 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
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In Stock

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Similar Products

Part Number STPSC6H065DI STPSC8H065DI STPSC4H065DI STPSC6H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 6A 8A 4A 6A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 6 A 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V 80 µA @ 650 V 40 µA @ 650 V 60 µA @ 650 V
Capacitance @ Vr, F - - - 300pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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