STPSC6H065B-TR
  • Share:

STMicroelectronics STPSC6H065B-TR

Manufacturer No:
STPSC6H065B-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 650V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC6H065B-TR is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. This 6 A, 650 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with a 650 V rating. The Schottky construction eliminates reverse recovery charge and minimizes capacitive turn-off behavior, making it independent of temperature. This diode is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 650 V
IF(AV) Average forward current 6 A
IF(RMS) Forward rms current 22 A
IFSM Surge non-repetitive forward current 400 A
Tj(max.) Junction temperature (max.) 175 °C
Package DPAK
Insulated voltage (TO-220AC Ins) 2500 Vrms
Typical package capacitance (TO-220AC Ins) 7 pF

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package (TO-220AC Ins): Insulated voltage up to 2500 Vrms, typical package capacitance of 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • DC-DC converters
  • LLC topologies
  • Boost diode

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC6H065B-TR?

    The maximum repetitive peak reverse voltage is 650 V.

  2. What is the average forward current rating of the STPSC6H065B-TR?

    The average forward current rating is 6 A.

  3. What is the junction temperature maximum rating for the STPSC6H065B-TR?

    The junction temperature maximum rating is 175 °C.

  4. What type of package is available for the STPSC6H065B-TR?

    The STPSC6H065B-TR is available in a DPAK package.

  5. Does the STPSC6H065B-TR have any special insulation features?

    Yes, the insulated package (TO-220AC Ins) offers an insulated voltage up to 2500 Vrms.

  6. What are the key applications for the STPSC6H065B-TR?

    The key applications include switch mode power supply, PFC, DC-DC converters, LLC topologies, and boost diode.

  7. Is the STPSC6H065B-TR compliant with environmental standards?

    Yes, it is ECOPACK®2 compliant.

  8. What is the significance of the Schottky construction in the STPSC6H065B-TR?

    The Schottky construction eliminates reverse recovery charge and minimizes capacitive turn-off behavior, making it independent of temperature.

  9. How does the high forward surge capability benefit the STPSC6H065B-TR?

    The high forward surge capability ensures good robustness during transient phases.

  10. Where can I find more detailed specifications and resources for the STPSC6H065B-TR?

    You can find detailed specifications and resources on the official STMicroelectronics website and through authorized distributors.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:60 µA @ 650 V
Capacitance @ Vr, F:300pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.76
97

Please send RFQ , we will respond immediately.

Same Series
STPSC6H065DI
STPSC6H065DI
DIODE SCHOTTKY 650V 6A TO220AC
STPSC6H065B-TR
STPSC6H065B-TR
DIODE SCHOTTKY 650V 6A DPAK
STPSC6H065G-TR
STPSC6H065G-TR
DIODE SCHOTTKY 650V 6A D2PAK

Similar Products

Part Number STPSC6H065B-TR STPSC8H065B-TR STPSC6H065BY-TR STPSC6H065G-TR STPSC2H065B-TR STPSC4H065B-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 6A 8A 6A 6A 2A 4A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 6 A 1.75 V @ 8 A - 1.75 V @ 6 A 1.55 V @ 2 A 1.75 V @ 4 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns - 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V 80 µA @ 650 V 60 µA @ 650 V 60 µA @ 650 V 20 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 300pF @ 0V, 1MHz 414pF @ 0V, 1MHz 300pF @ 0V, 1MHz 300pF @ 0V, 1MHz 135pF @ 0V, 1MHz 200pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK D²PAK DPAK DPAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP