STPSC8H065D
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STMicroelectronics STPSC8H065D

Manufacturer No:
STPSC8H065D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC8H065D is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. This 8 A, 650 V SiC diode is built using a silicon carbide substrate, which allows for the design of a Schottky diode structure with a high voltage rating. The device is particularly suited for use in Power Factor Correction (PFC) applications and hard switching conditions, enhancing performance and robustness during transient phases.

Key Specifications

Parameter Value
Manufacturer STMicroelectronics
Part Number STPSC8H065D
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Capacitance @ Vr, F 414 pF @ 0 V, 1 MHz
Package / Case TO-220AC
Mounting Type Through Hole
Operating Temperature - Junction -40°C to 175°C
Junction Temperature (°C) (max) 175°C

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package with 2500 V RMS insulated voltage
  • Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK2 compliant component

Applications

The STPSC8H065D is especially suited for use in Power Factor Correction (PFC) applications and hard switching conditions. It is ideal for enhancing performance and robustness in various power systems, including industrial and high-power electronic devices.

Q & A

  1. What is the maximum DC reverse voltage of the STPSC8H065D?

    The maximum DC reverse voltage is 650 V.

  2. What is the average rectified current rating of the STPSC8H065D?

    The average rectified current rating is 8 A.

  3. What is the forward voltage drop at 8 A for the STPSC8H065D?

    The forward voltage drop at 8 A is 1.75 V.

  4. Does the STPSC8H065D have any reverse recovery time?

    No, the STPSC8H065D has zero reverse recovery time.

  5. What is the typical package capacitance of the STPSC8H065D?

    The typical package capacitance is 7 pF.

  6. What is the operating junction temperature range of the STPSC8H065D?

    The operating junction temperature range is -40°C to 175°C.

  7. Is the STPSC8H065D RoHS compliant?
  8. What type of package does the STPSC8H065D come in?

    The STPSC8H065D comes in a TO-220AC package.

  9. What are the primary applications for the STPSC8H065D?

    The primary applications include Power Factor Correction (PFC) and hard switching conditions in industrial and high-power electronic devices.

  10. Does the STPSC8H065D have high forward surge capability?

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:414pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
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Same Series
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STPSC8H065DI
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Similar Products

Part Number STPSC8H065D STPSC8H065DI STPSC4H065D STPSC6H065D STPSC8065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 8A 8A 4A 6A 8A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A 1.45 V @ 8 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns - 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V 80 µA @ 650 V 40 µA @ 650 V 60 µA @ 650 V 105 µA @ 650 V
Capacitance @ Vr, F 414pF @ 0V, 1MHz - 200pF @ 0V, 1MHz 300pF @ 0V, 1MHz 540pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Insulated, TO-220AC TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC ins TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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