STTH2R06U
  • Share:

STMicroelectronics STTH2R06U

Manufacturer No:
STTH2R06U
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH2R06U, produced by STMicroelectronics, is a high-efficiency ultrafast diode that utilizes ST Turbo 2 600 V planar Pt doping technology. This device is specifically designed for use in switching mode base drive and transistor circuits, making it ideal for high-frequency applications. It is available in various packages, including SMB, SMA, SMC, and DO-41, to cater to different design requirements.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 600 V
Average Forward Current (IF(AV)) 2 A
Forward RMS Current (IF(RMS)) 7 A
Surge Non-Repetitive Forward Current (IFSM) 30-40 A
Forward Voltage Drop (VF) 1.0 - 1.7 V
Reverse Recovery Time (trr) 30-50 ns
Operating Junction Temperature Range -40 to +175 °C
Storage Temperature Range -65 to +175 °C
Junction to Lead Thermal Resistance (Rth(j-l)) 20-35 °C/W

Key Features

  • Very low conduction losses
  • Low forward and reverse recovery times
  • Negligible switching losses
  • High junction temperature capability up to 175°C
  • Available in various packages: SMB, SMA, SMC, and DO-41
  • Suitable for high-frequency inverters, free-wheeling, and polarity protection

Applications

The STTH2R06U is designed for use in various high-frequency applications, including:

  • Switching mode base drive and transistor circuits
  • High-frequency inverters
  • Free-wheeling diode applications
  • Polarity protection circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH2R06U?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current rating of the STTH2R06U?

    The average forward current (IF(AV)) is 2 A.

  3. What are the typical forward and reverse recovery times of the STTH2R06U?

    The typical forward recovery time is around 100 ns, and the reverse recovery time is between 30-50 ns.

  4. What is the maximum operating junction temperature of the STTH2R06U?

    The maximum operating junction temperature is 175°C.

  5. In which packages is the STTH2R06U available?

    The STTH2R06U is available in SMB, SMA, SMC, and DO-41 packages.

  6. What are the primary applications of the STTH2R06U?

    The primary applications include high-frequency inverters, free-wheeling, and polarity protection circuits.

  7. What technology does the STTH2R06U use?

    The STTH2R06U uses ST Turbo 2 600 V planar Pt doping technology.

  8. What is the surge non-repetitive forward current rating of the STTH2R06U?

    The surge non-repetitive forward current (IFSM) is 30-40 A depending on the package.

  9. Is the STTH2R06U RoHS compliant?
  10. What is the storage temperature range for the STTH2R06U?

    The storage temperature range is -65 to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$0.45
465

Please send RFQ , we will respond immediately.

Same Series
STTH2R06A
STTH2R06A
DIODE GEN PURP 600V 2A SMA
STTH2R06
STTH2R06
DIODE GEN PURP 600V 2A DO41
STTH2R06RL
STTH2R06RL
DIODE GEN PURP 600V 2A DO41
STTH2R06S
STTH2R06S
DIODE GEN PURP 600V 2A SMC

Similar Products

Part Number STTH2R06U STTH3R06U STTH1R06U STTH2L06U STTH2R02U STTH2R06 STTH2R06A STTH2R06S
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 200 V 600 V 600 V 600 V
Current - Average Rectified (Io) 2A 3A 1A 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 2 A 1.7 V @ 3 A 1.7 V @ 1 A 1.3 V @ 2 A 1 V @ 2 A 1.7 V @ 2 A 1.7 V @ 2 A 1.7 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 35 ns 45 ns 85 ns 30 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 2 µA @ 600 V 3 µA @ 600 V 1 µA @ 600 V 2 µA @ 600 V 3 µA @ 200 V 2 µA @ 600 V 2 µA @ 600 V 2 µA @ 600 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-204AL, DO-41, Axial DO-214AC, SMA DO-214AB, SMC
Supplier Device Package SMB SMB SMB SMB SMB DO-41 SMA SMC
Operating Temperature - Junction -40°C ~ 175°C 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
MC34063ABD
MC34063ABD
STMicroelectronics
IC REG BUCK BST ADJ 1.5A 8SO
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK