STTH1R06U
  • Share:

STMicroelectronics STTH1R06U

Manufacturer No:
STTH1R06U
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH1R06U, produced by STMicroelectronics, is a Turbo 2 ultrafast high voltage rectifier diode. This device is specifically designed using ST Turbo 2 600 V technology, making it highly suitable for use as a boost diode in power factor correction circuitry. Additionally, it is intended for use as a free wheeling diode in power supplies and other power switching applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 600 V
Average Forward Current (IF(AV)) 1 A (Tc = 135°C, δ = 0.5 for SMB package) A
Maximum Operating Junction Temperature (Tj) 175 °C
Reverse Recovery Time (trr) 25 ns (max) ns
Forward Voltage Drop (VF) 1.0 V (typ) at IF = 1 A V
Reverse Leakage Current (IR) 75 µA (max) at Tj = 150°C, VR = VRRM µA
Surge Non-Repetitive Forward Current (IFSM) 20 A (max) for SMB package, tp = 10ms sinusoidal A
Storage Temperature Range (Tstg) -65 to +175 °C
Junction to Lead Thermal Resistance (Rth(j-l)) 25 °C/W for SMB package °C/W
Junction to Ambient Thermal Resistance (Rth(j-a)) 70 °C/W for SMB package °C/W

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching and conduction losses

Applications

The STTH1R06U is particularly suited for use in:

  • Power factor correction circuitry as a boost diode
  • Power supplies as a free wheeling diode
  • Other power switching applications

Q & A

  1. What is the repetitive peak reverse voltage of the STTH1R06U?

    The repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current rating for the STTH1R06U?

    The average forward current (IF(AV)) is 1 A for the SMB package at Tc = 135°C, δ = 0.5.

  3. What is the maximum operating junction temperature for the STTH1R06U?

    The maximum operating junction temperature (Tj) is 175°C.

  4. What is the reverse recovery time of the STTH1R06U?

    The reverse recovery time (trr) is up to 25 ns.

  5. What is the typical forward voltage drop of the STTH1R06U?

    The typical forward voltage drop (VF) is 1.0 V at IF = 1 A.

  6. What is the reverse leakage current of the STTH1R06U?

    The reverse leakage current (IR) is up to 75 µA at Tj = 150°C, VR = VRRM.

  7. What is the surge non-repetitive forward current rating for the STTH1R06U?

    The surge non-repetitive forward current (IFSM) is up to 20 A for the SMB package, tp = 10ms sinusoidal.

  8. What is the storage temperature range for the STTH1R06U?

    The storage temperature range (Tstg) is -65 to +175°C.

  9. What are the typical applications of the STTH1R06U?

    The STTH1R06U is used in power factor correction circuitry, power supplies, and other power switching applications.

  10. What are the key features of the STTH1R06U?

    The key features include ultrafast switching, low reverse recovery current, low thermal resistance, and reduced switching and conduction losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):45 ns
Current - Reverse Leakage @ Vr:1 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.58
321

Please send RFQ , we will respond immediately.

Same Series
STTH1R06RL
STTH1R06RL
DIODE GEN PURP 600V 1A DO41
STTH1R06
STTH1R06
DIODE GEN PURP 600V 1A DO41
STTH8L06G
STTH8L06G
DIODE GEN PURP 600V 8A D2PAK

Similar Products

Part Number STTH1R06U STTH2R06U STTH1L06U STTH1R02U STTH1R04U STTH1R06 STTH1R06A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 1A 2A 1A 1.5A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1.7 V @ 2 A 1.3 V @ 1 A 1 V @ 1.5 A 1.5 V @ 1 A 1.7 V @ 1 A 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 45 ns 50 ns 80 ns 30 ns 30 ns 45 ns 45 ns
Current - Reverse Leakage @ Vr 1 µA @ 600 V 2 µA @ 600 V 1 µA @ 600 V 3 µA @ 200 V 5 µA @ 400 V 1 µA @ 600 V 1 µA @ 600 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-204AL, DO-41, Axial DO-214AC, SMA
Supplier Device Package SMB SMB SMB SMB SMB DO-41 SMA
Operating Temperature - Junction 175°C (Max) -40°C ~ 175°C 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
TS339IPT
TS339IPT
STMicroelectronics
IC COMP MICROPWR QUAD V 14 TSSOP
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA