STTH1R06U
  • Share:

STMicroelectronics STTH1R06U

Manufacturer No:
STTH1R06U
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH1R06U, produced by STMicroelectronics, is a Turbo 2 ultrafast high voltage rectifier diode. This device is specifically designed using ST Turbo 2 600 V technology, making it highly suitable for use as a boost diode in power factor correction circuitry. Additionally, it is intended for use as a free wheeling diode in power supplies and other power switching applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 600 V
Average Forward Current (IF(AV)) 1 A (Tc = 135°C, δ = 0.5 for SMB package) A
Maximum Operating Junction Temperature (Tj) 175 °C
Reverse Recovery Time (trr) 25 ns (max) ns
Forward Voltage Drop (VF) 1.0 V (typ) at IF = 1 A V
Reverse Leakage Current (IR) 75 µA (max) at Tj = 150°C, VR = VRRM µA
Surge Non-Repetitive Forward Current (IFSM) 20 A (max) for SMB package, tp = 10ms sinusoidal A
Storage Temperature Range (Tstg) -65 to +175 °C
Junction to Lead Thermal Resistance (Rth(j-l)) 25 °C/W for SMB package °C/W
Junction to Ambient Thermal Resistance (Rth(j-a)) 70 °C/W for SMB package °C/W

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching and conduction losses

Applications

The STTH1R06U is particularly suited for use in:

  • Power factor correction circuitry as a boost diode
  • Power supplies as a free wheeling diode
  • Other power switching applications

Q & A

  1. What is the repetitive peak reverse voltage of the STTH1R06U?

    The repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current rating for the STTH1R06U?

    The average forward current (IF(AV)) is 1 A for the SMB package at Tc = 135°C, δ = 0.5.

  3. What is the maximum operating junction temperature for the STTH1R06U?

    The maximum operating junction temperature (Tj) is 175°C.

  4. What is the reverse recovery time of the STTH1R06U?

    The reverse recovery time (trr) is up to 25 ns.

  5. What is the typical forward voltage drop of the STTH1R06U?

    The typical forward voltage drop (VF) is 1.0 V at IF = 1 A.

  6. What is the reverse leakage current of the STTH1R06U?

    The reverse leakage current (IR) is up to 75 µA at Tj = 150°C, VR = VRRM.

  7. What is the surge non-repetitive forward current rating for the STTH1R06U?

    The surge non-repetitive forward current (IFSM) is up to 20 A for the SMB package, tp = 10ms sinusoidal.

  8. What is the storage temperature range for the STTH1R06U?

    The storage temperature range (Tstg) is -65 to +175°C.

  9. What are the typical applications of the STTH1R06U?

    The STTH1R06U is used in power factor correction circuitry, power supplies, and other power switching applications.

  10. What are the key features of the STTH1R06U?

    The key features include ultrafast switching, low reverse recovery current, low thermal resistance, and reduced switching and conduction losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):45 ns
Current - Reverse Leakage @ Vr:1 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.58
321

Please send RFQ , we will respond immediately.

Same Series
STTH1R06RL
STTH1R06RL
DIODE GEN PURP 600V 1A DO41
STTH1R06
STTH1R06
DIODE GEN PURP 600V 1A DO41
STTH8L06G
STTH8L06G
DIODE GEN PURP 600V 8A D2PAK

Similar Products

Part Number STTH1R06U STTH2R06U STTH1L06U STTH1R02U STTH1R04U STTH1R06 STTH1R06A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 1A 2A 1A 1.5A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1.7 V @ 2 A 1.3 V @ 1 A 1 V @ 1.5 A 1.5 V @ 1 A 1.7 V @ 1 A 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 45 ns 50 ns 80 ns 30 ns 30 ns 45 ns 45 ns
Current - Reverse Leakage @ Vr 1 µA @ 600 V 2 µA @ 600 V 1 µA @ 600 V 3 µA @ 200 V 5 µA @ 400 V 1 µA @ 600 V 1 µA @ 600 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-204AL, DO-41, Axial DO-214AC, SMA
Supplier Device Package SMB SMB SMB SMB SMB DO-41 SMA
Operating Temperature - Junction 175°C (Max) -40°C ~ 175°C 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
MC34063ABD
MC34063ABD
STMicroelectronics
IC REG BUCK BST ADJ 1.5A 8SO
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP