STTH1R06U
  • Share:

STMicroelectronics STTH1R06U

Manufacturer No:
STTH1R06U
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH1R06U, produced by STMicroelectronics, is a Turbo 2 ultrafast high voltage rectifier diode. This device is specifically designed using ST Turbo 2 600 V technology, making it highly suitable for use as a boost diode in power factor correction circuitry. Additionally, it is intended for use as a free wheeling diode in power supplies and other power switching applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 600 V
Average Forward Current (IF(AV)) 1 A (Tc = 135°C, δ = 0.5 for SMB package) A
Maximum Operating Junction Temperature (Tj) 175 °C
Reverse Recovery Time (trr) 25 ns (max) ns
Forward Voltage Drop (VF) 1.0 V (typ) at IF = 1 A V
Reverse Leakage Current (IR) 75 µA (max) at Tj = 150°C, VR = VRRM µA
Surge Non-Repetitive Forward Current (IFSM) 20 A (max) for SMB package, tp = 10ms sinusoidal A
Storage Temperature Range (Tstg) -65 to +175 °C
Junction to Lead Thermal Resistance (Rth(j-l)) 25 °C/W for SMB package °C/W
Junction to Ambient Thermal Resistance (Rth(j-a)) 70 °C/W for SMB package °C/W

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching and conduction losses

Applications

The STTH1R06U is particularly suited for use in:

  • Power factor correction circuitry as a boost diode
  • Power supplies as a free wheeling diode
  • Other power switching applications

Q & A

  1. What is the repetitive peak reverse voltage of the STTH1R06U?

    The repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current rating for the STTH1R06U?

    The average forward current (IF(AV)) is 1 A for the SMB package at Tc = 135°C, δ = 0.5.

  3. What is the maximum operating junction temperature for the STTH1R06U?

    The maximum operating junction temperature (Tj) is 175°C.

  4. What is the reverse recovery time of the STTH1R06U?

    The reverse recovery time (trr) is up to 25 ns.

  5. What is the typical forward voltage drop of the STTH1R06U?

    The typical forward voltage drop (VF) is 1.0 V at IF = 1 A.

  6. What is the reverse leakage current of the STTH1R06U?

    The reverse leakage current (IR) is up to 75 µA at Tj = 150°C, VR = VRRM.

  7. What is the surge non-repetitive forward current rating for the STTH1R06U?

    The surge non-repetitive forward current (IFSM) is up to 20 A for the SMB package, tp = 10ms sinusoidal.

  8. What is the storage temperature range for the STTH1R06U?

    The storage temperature range (Tstg) is -65 to +175°C.

  9. What are the typical applications of the STTH1R06U?

    The STTH1R06U is used in power factor correction circuitry, power supplies, and other power switching applications.

  10. What are the key features of the STTH1R06U?

    The key features include ultrafast switching, low reverse recovery current, low thermal resistance, and reduced switching and conduction losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):45 ns
Current - Reverse Leakage @ Vr:1 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.58
321

Please send RFQ , we will respond immediately.

Same Series
STTH1R06RL
STTH1R06RL
DIODE GEN PURP 600V 1A DO41
STTH1R06
STTH1R06
DIODE GEN PURP 600V 1A DO41
STTH8L06G
STTH8L06G
DIODE GEN PURP 600V 8A D2PAK

Similar Products

Part Number STTH1R06U STTH2R06U STTH1L06U STTH1R02U STTH1R04U STTH1R06 STTH1R06A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 1A 2A 1A 1.5A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1.7 V @ 2 A 1.3 V @ 1 A 1 V @ 1.5 A 1.5 V @ 1 A 1.7 V @ 1 A 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 45 ns 50 ns 80 ns 30 ns 30 ns 45 ns 45 ns
Current - Reverse Leakage @ Vr 1 µA @ 600 V 2 µA @ 600 V 1 µA @ 600 V 3 µA @ 200 V 5 µA @ 400 V 1 µA @ 600 V 1 µA @ 600 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-204AL, DO-41, Axial DO-214AC, SMA
Supplier Device Package SMB SMB SMB SMB SMB DO-41 SMA
Operating Temperature - Junction 175°C (Max) -40°C ~ 175°C 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB