STPSC10H065G-TR
  • Share:

STMicroelectronics STPSC10H065G-TR

Manufacturer No:
STPSC10H065G-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SILICON 650V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10H065G-TR is a high-performance silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. This 10 A, 650 V diode is designed using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with superior electrical characteristics. The device is particularly suited for applications requiring high efficiency, low losses, and robust performance under hard switching conditions.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 650 V
IF(AV) (Average Forward Current) 10 A
IF(RMS) (Forward RMS Current) 22 A
IFRM (Repetitive Peak Forward Current) 41 A
IFSM (Surge Non-Repetitive Forward Current) 90 (tp = 10 ms, Tc = 25 °C) A
Tstg (Storage Temperature Range) -55 to +175 °C
Tj (Operating Junction Temperature Range) -40 to +175 °C
Rth(j-c) (Junction to Case Thermal Resistance) 1.25 (Typ), 1.5 (Max) °C/W
VF (Forward Voltage Drop) 1.56 (Typ), 1.75 (Max) at IF = 10 A, Tj = 25 °C V
IR (Reverse Leakage Current) 9 (Min), 100 (Max) at Tj = 25 °C, VR = VRRM µA

Key Features

  • No reverse recovery charge in the application current range, reducing switching losses.
  • Switching behavior independent of temperature, ensuring consistent performance across a wide temperature range.
  • High forward surge capability, providing robustness during transient phases.
  • Insulated package options (TO-220AC Ins), with an insulated voltage of 2500 VRMS and typical package capacitance of 7 pF.
  • Power-efficient design, minimizing conduction losses.
  • ECOPACK®2 compliant, meeting environmental standards.

Applications

  • Switch-mode power supplies.
  • Power Factor Correction (PFC) circuits.
  • DC-DC converters.
  • LLC (Inductor-Inductor-Capacitor) topologies.
  • Boost diode applications.

Q & A

  1. What is the repetitive peak reverse voltage of the STPSC10H065G-TR?

    The repetitive peak reverse voltage (VRRM) is 650 V.

  2. What is the average forward current rating of this diode?

    The average forward current (IF(AV)) is 10 A.

  3. What are the typical and maximum junction to case thermal resistances?

    The typical junction to case thermal resistance (Rth(j-c)) is 1.25 °C/W, and the maximum is 1.5 °C/W.

  4. What is the forward voltage drop at 10 A and 25 °C?

    The forward voltage drop (VF) at 10 A and 25 °C is typically 1.56 V and maximally 1.75 V.

  5. Is the STPSC10H065G-TR environmentally compliant?

    Yes, it is ECOPACK®2 compliant, meeting environmental standards.

  6. What are the common applications for this diode?

    Common applications include switch-mode power supplies, PFC circuits, DC-DC converters, LLC topologies, and boost diode applications.

  7. What is the storage temperature range for this component?

    The storage temperature range (Tstg) is -55 to +175 °C.

  8. What is the operating junction temperature range?

    The operating junction temperature range (Tj) is -40 to +175 °C.

  9. Does the diode have any special packaging options?

    Yes, it is available in insulated packages (TO-220AC Ins) with an insulated voltage of 2500 VRMS.

  10. How does the diode perform in terms of switching behavior?

    The switching behavior is independent of temperature, ensuring consistent performance across a wide temperature range.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:480pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$4.02
196

Please send RFQ , we will respond immediately.

Same Series
STPSC10H065G-TR
STPSC10H065G-TR
DIODE SILICON 650V 10A D2PAK
STPSC10H065B-TR
STPSC10H065B-TR
DIODE SCHOTTKY 650V 10A DPAK
STPSC10H065DI
STPSC10H065DI
DIODE SCHOTTKY 650V 10A TO220AC

Similar Products

Part Number STPSC10H065G-TR STPSC10H065GY-TR STPSC10H065B-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V 100 µA @ 650 V 100 µA @ 650 V
Capacitance @ Vr, F 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D²PAK D²PAK DPAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
M74HC174RM13TR
M74HC174RM13TR
STMicroelectronics
IC FF D-TYPE SNGL 6BIT 16SOP
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC