STPSC10H065G-TR
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STMicroelectronics STPSC10H065G-TR

Manufacturer No:
STPSC10H065G-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SILICON 650V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10H065G-TR is a high-performance silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. This 10 A, 650 V diode is designed using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with superior electrical characteristics. The device is particularly suited for applications requiring high efficiency, low losses, and robust performance under hard switching conditions.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 650 V
IF(AV) (Average Forward Current) 10 A
IF(RMS) (Forward RMS Current) 22 A
IFRM (Repetitive Peak Forward Current) 41 A
IFSM (Surge Non-Repetitive Forward Current) 90 (tp = 10 ms, Tc = 25 °C) A
Tstg (Storage Temperature Range) -55 to +175 °C
Tj (Operating Junction Temperature Range) -40 to +175 °C
Rth(j-c) (Junction to Case Thermal Resistance) 1.25 (Typ), 1.5 (Max) °C/W
VF (Forward Voltage Drop) 1.56 (Typ), 1.75 (Max) at IF = 10 A, Tj = 25 °C V
IR (Reverse Leakage Current) 9 (Min), 100 (Max) at Tj = 25 °C, VR = VRRM µA

Key Features

  • No reverse recovery charge in the application current range, reducing switching losses.
  • Switching behavior independent of temperature, ensuring consistent performance across a wide temperature range.
  • High forward surge capability, providing robustness during transient phases.
  • Insulated package options (TO-220AC Ins), with an insulated voltage of 2500 VRMS and typical package capacitance of 7 pF.
  • Power-efficient design, minimizing conduction losses.
  • ECOPACK®2 compliant, meeting environmental standards.

Applications

  • Switch-mode power supplies.
  • Power Factor Correction (PFC) circuits.
  • DC-DC converters.
  • LLC (Inductor-Inductor-Capacitor) topologies.
  • Boost diode applications.

Q & A

  1. What is the repetitive peak reverse voltage of the STPSC10H065G-TR?

    The repetitive peak reverse voltage (VRRM) is 650 V.

  2. What is the average forward current rating of this diode?

    The average forward current (IF(AV)) is 10 A.

  3. What are the typical and maximum junction to case thermal resistances?

    The typical junction to case thermal resistance (Rth(j-c)) is 1.25 °C/W, and the maximum is 1.5 °C/W.

  4. What is the forward voltage drop at 10 A and 25 °C?

    The forward voltage drop (VF) at 10 A and 25 °C is typically 1.56 V and maximally 1.75 V.

  5. Is the STPSC10H065G-TR environmentally compliant?

    Yes, it is ECOPACK®2 compliant, meeting environmental standards.

  6. What are the common applications for this diode?

    Common applications include switch-mode power supplies, PFC circuits, DC-DC converters, LLC topologies, and boost diode applications.

  7. What is the storage temperature range for this component?

    The storage temperature range (Tstg) is -55 to +175 °C.

  8. What is the operating junction temperature range?

    The operating junction temperature range (Tj) is -40 to +175 °C.

  9. Does the diode have any special packaging options?

    Yes, it is available in insulated packages (TO-220AC Ins) with an insulated voltage of 2500 VRMS.

  10. How does the diode perform in terms of switching behavior?

    The switching behavior is independent of temperature, ensuring consistent performance across a wide temperature range.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:480pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
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Same Series
STPSC10H065G-TR
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STPSC10H065B-TR
STPSC10H065B-TR
DIODE SCHOTTKY 650V 10A DPAK
STPSC10H065DI
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Similar Products

Part Number STPSC10H065G-TR STPSC10H065GY-TR STPSC10H065B-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V 100 µA @ 650 V 100 µA @ 650 V
Capacitance @ Vr, F 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D²PAK D²PAK DPAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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