STPSC10H065G-TR
  • Share:

STMicroelectronics STPSC10H065G-TR

Manufacturer No:
STPSC10H065G-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SILICON 650V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10H065G-TR is a high-performance silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. This 10 A, 650 V diode is designed using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with superior electrical characteristics. The device is particularly suited for applications requiring high efficiency, low losses, and robust performance under hard switching conditions.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 650 V
IF(AV) (Average Forward Current) 10 A
IF(RMS) (Forward RMS Current) 22 A
IFRM (Repetitive Peak Forward Current) 41 A
IFSM (Surge Non-Repetitive Forward Current) 90 (tp = 10 ms, Tc = 25 °C) A
Tstg (Storage Temperature Range) -55 to +175 °C
Tj (Operating Junction Temperature Range) -40 to +175 °C
Rth(j-c) (Junction to Case Thermal Resistance) 1.25 (Typ), 1.5 (Max) °C/W
VF (Forward Voltage Drop) 1.56 (Typ), 1.75 (Max) at IF = 10 A, Tj = 25 °C V
IR (Reverse Leakage Current) 9 (Min), 100 (Max) at Tj = 25 °C, VR = VRRM µA

Key Features

  • No reverse recovery charge in the application current range, reducing switching losses.
  • Switching behavior independent of temperature, ensuring consistent performance across a wide temperature range.
  • High forward surge capability, providing robustness during transient phases.
  • Insulated package options (TO-220AC Ins), with an insulated voltage of 2500 VRMS and typical package capacitance of 7 pF.
  • Power-efficient design, minimizing conduction losses.
  • ECOPACK®2 compliant, meeting environmental standards.

Applications

  • Switch-mode power supplies.
  • Power Factor Correction (PFC) circuits.
  • DC-DC converters.
  • LLC (Inductor-Inductor-Capacitor) topologies.
  • Boost diode applications.

Q & A

  1. What is the repetitive peak reverse voltage of the STPSC10H065G-TR?

    The repetitive peak reverse voltage (VRRM) is 650 V.

  2. What is the average forward current rating of this diode?

    The average forward current (IF(AV)) is 10 A.

  3. What are the typical and maximum junction to case thermal resistances?

    The typical junction to case thermal resistance (Rth(j-c)) is 1.25 °C/W, and the maximum is 1.5 °C/W.

  4. What is the forward voltage drop at 10 A and 25 °C?

    The forward voltage drop (VF) at 10 A and 25 °C is typically 1.56 V and maximally 1.75 V.

  5. Is the STPSC10H065G-TR environmentally compliant?

    Yes, it is ECOPACK®2 compliant, meeting environmental standards.

  6. What are the common applications for this diode?

    Common applications include switch-mode power supplies, PFC circuits, DC-DC converters, LLC topologies, and boost diode applications.

  7. What is the storage temperature range for this component?

    The storage temperature range (Tstg) is -55 to +175 °C.

  8. What is the operating junction temperature range?

    The operating junction temperature range (Tj) is -40 to +175 °C.

  9. Does the diode have any special packaging options?

    Yes, it is available in insulated packages (TO-220AC Ins) with an insulated voltage of 2500 VRMS.

  10. How does the diode perform in terms of switching behavior?

    The switching behavior is independent of temperature, ensuring consistent performance across a wide temperature range.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:480pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$4.02
196

Please send RFQ , we will respond immediately.

Same Series
STPSC10H065G-TR
STPSC10H065G-TR
DIODE SILICON 650V 10A D2PAK
STPSC10H065B-TR
STPSC10H065B-TR
DIODE SCHOTTKY 650V 10A DPAK
STPSC10H065DI
STPSC10H065DI
DIODE SCHOTTKY 650V 10A TO220AC

Similar Products

Part Number STPSC10H065G-TR STPSC10H065GY-TR STPSC10H065B-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V 100 µA @ 650 V 100 µA @ 650 V
Capacitance @ Vr, F 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D²PAK D²PAK DPAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3