STPSC10065D
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STMicroelectronics STPSC10065D

Manufacturer No:
STPSC10065D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10065D is an ultra-high performance power Schottky silicon carbide (SiC) diode manufactured by STMicroelectronics. This 10 A, 650 V diode is designed using a silicon carbide substrate, which enables it to operate at high voltages and currents efficiently. The device is characterized by its low forward voltage drop, high forward surge capability, and negligible reverse recovery, making it highly suitable for various high-power applications.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 650 V
IF(AV) (Average forward current) 10 A
IFSM (Surge non-repetitive forward current) 48 (tp = 10 ms, Tc = 25 °C) A
VF(typ.) (Forward voltage drop) 1.30 V
Tj(max.) (Operating junction temperature range) -40 to +175 °C
Rth(j-c) (Junction to case thermal resistance) 1.4 (typ.), 2.0 (max.) °C/W
Cj (Total capacitance) 670 pF (VR = 0 V, Tc = 25 °C, F = 1 MHz) pF

Key Features

  • Ultra-high performance power Schottky silicon carbide diode.
  • Low forward voltage drop (VF = 1.30 V typical).
  • No or negligible reverse recovery and minimal capacitive turn-off behavior.
  • High forward surge capability and temperature-independent switching behavior.
  • Qualified in low profile PowerFLAT 8x8 HV package, enabling low drop forward voltage and high surge capabilities in a compact space.
  • ECOPACK2 compliant, meeting environmental requirements.

Applications

  • Boost PFC (Power Factor Correction) applications.
  • Bootstrap diode functions.
  • LLC (Inductor-Inductor-Capacitor) clamping functions.
  • High frequency inverter applications.
  • Solar energy conversion and EV/HEV charging stations.
  • Telecom, network, industrial, and renewable energy domains.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC10065D?

    The maximum repetitive peak reverse voltage (VRRM) is 650 V.

  2. What is the average forward current rating of the STPSC10065D?

    The average forward current (IF(AV)) is 10 A.

  3. What is the typical forward voltage drop of the STPSC10065D?

    The typical forward voltage drop (VF(typ.)) is 1.30 V.

  4. What is the operating junction temperature range of the STPSC10065D?

    The operating junction temperature range (Tj(max.)) is -40 to +175 °C.

  5. What are the key applications of the STPSC10065D?

    The STPSC10065D is used in boost PFC, bootstrap diode functions, LLC clamping functions, high frequency inverter applications, solar energy conversion, and EV/HEV charging stations.

  6. What package type is the STPSC10065D available in?

    The STPSC10065D is available in the PowerFLAT 8x8 HV package.

  7. Is the STPSC10065D environmentally compliant?

    Yes, the STPSC10065D is ECOPACK2 compliant, meeting environmental requirements.

  8. What is the thermal resistance of the STPSC10065D?

    The junction to case thermal resistance (Rth(j-c)) is 1.4 °C/W (typ.) and 2.0 °C/W (max.).

  9. What is the total capacitance of the STPSC10065D?

    The total capacitance (Cj) is 670 pF at VR = 0 V, Tc = 25 °C, and F = 1 MHz.

  10. Does the STPSC10065D have any reverse recovery characteristics?

    No, the STPSC10065D has negligible reverse recovery and minimal capacitive turn-off behavior.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:130 µA @ 650 V
Capacitance @ Vr, F:670pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC10065D STPSC10065DY STPSC1006D STPSC20065D STPSC10H065D STPSC12065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 600 V 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A 20A 10A 12A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 10 A 1.45 V @ 10 A 1.75 V @ 10 A 1.45 V @ 20 A 1.75 V @ 10 A 1.45 V @ 12 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 130 µA @ 650 V 130 µA @ 650 V 300 µA @ 600 V 300 µA @ 650 V 100 µA @ 650 V 150 µA @ 650 V
Capacitance @ Vr, F 670pF @ 0V, 1MHz 670pF @ 0V, 1MHz 650pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 480pF @ 0V, 1MHz 750pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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