STPSC10065D
  • Share:

STMicroelectronics STPSC10065D

Manufacturer No:
STPSC10065D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10065D is an ultra-high performance power Schottky silicon carbide (SiC) diode manufactured by STMicroelectronics. This 10 A, 650 V diode is designed using a silicon carbide substrate, which enables it to operate at high voltages and currents efficiently. The device is characterized by its low forward voltage drop, high forward surge capability, and negligible reverse recovery, making it highly suitable for various high-power applications.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 650 V
IF(AV) (Average forward current) 10 A
IFSM (Surge non-repetitive forward current) 48 (tp = 10 ms, Tc = 25 °C) A
VF(typ.) (Forward voltage drop) 1.30 V
Tj(max.) (Operating junction temperature range) -40 to +175 °C
Rth(j-c) (Junction to case thermal resistance) 1.4 (typ.), 2.0 (max.) °C/W
Cj (Total capacitance) 670 pF (VR = 0 V, Tc = 25 °C, F = 1 MHz) pF

Key Features

  • Ultra-high performance power Schottky silicon carbide diode.
  • Low forward voltage drop (VF = 1.30 V typical).
  • No or negligible reverse recovery and minimal capacitive turn-off behavior.
  • High forward surge capability and temperature-independent switching behavior.
  • Qualified in low profile PowerFLAT 8x8 HV package, enabling low drop forward voltage and high surge capabilities in a compact space.
  • ECOPACK2 compliant, meeting environmental requirements.

Applications

  • Boost PFC (Power Factor Correction) applications.
  • Bootstrap diode functions.
  • LLC (Inductor-Inductor-Capacitor) clamping functions.
  • High frequency inverter applications.
  • Solar energy conversion and EV/HEV charging stations.
  • Telecom, network, industrial, and renewable energy domains.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC10065D?

    The maximum repetitive peak reverse voltage (VRRM) is 650 V.

  2. What is the average forward current rating of the STPSC10065D?

    The average forward current (IF(AV)) is 10 A.

  3. What is the typical forward voltage drop of the STPSC10065D?

    The typical forward voltage drop (VF(typ.)) is 1.30 V.

  4. What is the operating junction temperature range of the STPSC10065D?

    The operating junction temperature range (Tj(max.)) is -40 to +175 °C.

  5. What are the key applications of the STPSC10065D?

    The STPSC10065D is used in boost PFC, bootstrap diode functions, LLC clamping functions, high frequency inverter applications, solar energy conversion, and EV/HEV charging stations.

  6. What package type is the STPSC10065D available in?

    The STPSC10065D is available in the PowerFLAT 8x8 HV package.

  7. Is the STPSC10065D environmentally compliant?

    Yes, the STPSC10065D is ECOPACK2 compliant, meeting environmental requirements.

  8. What is the thermal resistance of the STPSC10065D?

    The junction to case thermal resistance (Rth(j-c)) is 1.4 °C/W (typ.) and 2.0 °C/W (max.).

  9. What is the total capacitance of the STPSC10065D?

    The total capacitance (Cj) is 670 pF at VR = 0 V, Tc = 25 °C, and F = 1 MHz.

  10. Does the STPSC10065D have any reverse recovery characteristics?

    No, the STPSC10065D has negligible reverse recovery and minimal capacitive turn-off behavior.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:130 µA @ 650 V
Capacitance @ Vr, F:670pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$3.53
164

Please send RFQ , we will respond immediately.

Same Series
EFL1K0AF39
EFL1K0AF39
BATTERY RECHARGE LITH THIN FILM
STF4N90K5
STF4N90K5
MOSFET N-CH 900V 4A TO220FP
STL35N75LF3
STL35N75LF3
MOSFET N-CH 75V 32A POWERFLAT
STL100N12F7
STL100N12F7
MOSFET N-CH 120V 100A POWERFLAT
STUSB4710ADTR
STUSB4710ADTR
IC USB CONTROLLER I2C 16SO
HVLED001
HVLED001
IC LED DRIVER OFFL PWM 10SSOP
HVLED001TR
HVLED001TR
IC LED DRIVER OFFL PWM 10SSOP
A6985F3V3TR
A6985F3V3TR
IC REG BUCK 3.3V 500MA 16HTSSOP
A6985FTR
A6985FTR
IC REG BUCK ADJ 500MA 16HTSSOP
A6985F5V
A6985F5V
IC REG BUCK 5V 500MA 16HTSSOP

Similar Products

Part Number STPSC10065D STPSC10065DY STPSC1006D STPSC20065D STPSC10H065D STPSC12065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 600 V 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A 20A 10A 12A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 10 A 1.45 V @ 10 A 1.75 V @ 10 A 1.45 V @ 20 A 1.75 V @ 10 A 1.45 V @ 12 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 130 µA @ 650 V 130 µA @ 650 V 300 µA @ 600 V 300 µA @ 650 V 100 µA @ 650 V 150 µA @ 650 V
Capacitance @ Vr, F 670pF @ 0V, 1MHz 670pF @ 0V, 1MHz 650pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 480pF @ 0V, 1MHz 750pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA