Overview
The STL100N12F7 is an N-channel Power MOSFET developed by STMicroelectronics using the 7th generation of STripFET™ DeepGATE™ technology. This device features a new gate structure that results in the lowest RDS(on) in all packages. It is housed in a PowerFLAT 5x6 package, which is RoHS compliant and classified under the Ecopack2 grade.
The STL100N12F7 is designed to offer high performance and efficiency, making it suitable for a variety of power management applications. It is part of STMicroelectronics' extensive portfolio of power MOSFETs, which includes a broad range of breakdown voltages from 100 V to 1700 V.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Part Number | STL100N12F7 | |
| Package | PowerFLAT 5x6 | |
| Drain-Source Voltage (VDS) | 120 V | V |
| Gate-Source Voltage (VGS) | ± 20 V | V |
| Continuous Drain Current (ID) at TC = 25 °C | 100 A | A |
| Continuous Drain Current (ID) at TC = 100 °C | 70 A | A |
| Pulsed Drain Current (IDM) | 150 A | A |
| Total Dissipation at TC = 25 °C | 100 W | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.0073 Ω (max), 0.0062 Ω (typ.) | Ω |
| Operating Junction Temperature | -55 to 175 °C | °C |
| Thermal Resistance Junction-Case | 1.56 °C/W | °C/W |
Key Features
- Ultra Low On-Resistance: The STL100N12F7 features the lowest RDS(on) in all packages, enhancing efficiency and reducing power losses.
- Advanced Technology: Developed using the 7th generation of STripFET™ DeepGATE™ technology with a new gate structure.
- High Current Capability: Supports continuous drain currents up to 100 A at TC = 25 °C.
- 100% Avalanche Tested: Ensures robustness and reliability under various operating conditions.
- RoHS Compliant: Ecopack2 compliant, making it environmentally friendly.
Applications
- Switching Applications: Ideal for high-frequency switching applications due to its low on-resistance and fast switching times.
- Power Management Systems: Suitable for use in power management systems, including DC-DC converters, battery chargers, and power supplies.
- Industrial Applications: Used in various industrial applications requiring high power handling and efficiency.
Q & A
- What is the STL100N12F7?
The STL100N12F7 is an N-channel Power MOSFET developed by STMicroelectronics using the 7th generation of STripFET™ DeepGATE™ technology.
- What is the maximum drain-source voltage of the STL100N12F7?
The maximum drain-source voltage (VDS) is 120 V.
- What is the typical on-resistance of the STL100N12F7?
The typical static drain-source on-resistance (RDS(on)) is 0.0062 Ω.
- What is the maximum continuous drain current at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 100 A.
- Is the STL100N12F7 RoHS compliant?
Yes, the STL100N12F7 is RoHS compliant and classified under the Ecopack2 grade.
- What is the operating junction temperature range of the STL100N12F7?
The operating junction temperature range is -55 to 175 °C.
- What are the typical applications of the STL100N12F7?
The STL100N12F7 is typically used in switching applications, power management systems, and various industrial applications.
- What is the thermal resistance junction-case of the STL100N12F7?
The thermal resistance junction-case is 1.56 °C/W.
- Is the STL100N12F7 100% avalanche tested?
Yes, the STL100N12F7 is 100% avalanche tested.
- What is the package type of the STL100N12F7?
The STL100N12F7 is housed in a PowerFLAT 5x6 package.
