STPSC1006D
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STMicroelectronics STPSC1006D

Manufacturer No:
STPSC1006D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 600V 10A TO220AC
Delivery:
Payment:
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Product Introduction

Overview

The STPSC1006D is a high-performance Silicon Carbide (SiC) Schottky diode produced by STMicroelectronics. This diode is designed to offer superior physical characteristics compared to standard silicon diodes, making it ideal for various high-power applications. The STPSC1006D is packaged in a TO-220AC configuration, which is widely used in industrial and power electronics.

Key Specifications

ParameterValue
TechnologySilicon Carbide (SiC) Schottky
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)10 A
Voltage - Forward (Vf) (Typ)Not specified, but generally lower than standard silicon diodes
Package TypeTO-220AC
Reverse Recovery TimeNot specified, but SiC diodes are known for fast recovery times
Junction Capacitance12 nC

Key Features

  • Ultra-high performance power Schottky rectifier with superior characteristics over standard silicon diodes.
  • Lower forward voltage drop compared to standard silicon diodes, enhancing efficiency.
  • Fast switching times and low reverse recovery charge, making it suitable for high-frequency applications.
  • High thermal stability and reliability due to the use of Silicon Carbide technology.
  • TO-220AC package for easy mounting and thermal management.

Applications

The STPSC1006D is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • High-frequency switching circuits.
  • Industrial power electronics and automation systems.

Q & A

  1. What is the maximum DC reverse voltage of the STPSC1006D?
    The maximum DC reverse voltage is 600 V.
  2. What is the average rectified current rating of the STPSC1006D?
    The average rectified current rating is 10 A.
  3. What package type is the STPSC1006D available in?
    The STPSC1006D is available in the TO-220AC package.
  4. What are the benefits of using Silicon Carbide (SiC) technology in the STPSC1006D?
    SiC technology offers lower forward voltage drop, faster switching times, and higher thermal stability compared to standard silicon diodes.
  5. What are some common applications for the STPSC1006D?
    Common applications include power supplies, motor drives, renewable energy systems, high-frequency switching circuits, and industrial power electronics.
  6. How does the STPSC1006D compare to standard silicon diodes in terms of performance?
    The STPSC1006D offers superior performance with lower forward voltage drop and faster recovery times compared to standard silicon diodes.
  7. What is the junction capacitance of the STPSC1006D?
    The junction capacitance is 12 nC.
  8. Is the STPSC1006D suitable for high-frequency applications?
    Yes, the STPSC1006D is suitable for high-frequency applications due to its fast switching times and low reverse recovery charge.
  9. What is the thermal stability of the STPSC1006D?
    The STPSC1006D has high thermal stability and reliability due to the use of Silicon Carbide technology.
  10. Where can I purchase the STPSC1006D?
    The STPSC1006D can be purchased from various electronic component distributors such as Digi-Key, Mouser, and Farnell.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:300 µA @ 600 V
Capacitance @ Vr, F:650pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC1006D STPSC1206D STPSC10065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 650 V
Current - Average Rectified (Io) 10A 12A 10A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.7 V @ 12 A 1.45 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 300 µA @ 600 V 150 µA @ 600 V 130 µA @ 650 V
Capacitance @ Vr, F 650pF @ 0V, 1MHz 750pF @ 0V, 1MHz 670pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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