STPSC20065D
  • Share:

STMicroelectronics STPSC20065D

Manufacturer No:
STPSC20065D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 20A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC20065D is an ultra-high performance power Schottky silicon carbide (SiC) diode manufactured by STMicroelectronics. This diode is designed using a silicon carbide substrate, which allows for a 650 V rating and superior performance characteristics. The SiC material enables the diode to operate with no reverse recovery charge and minimal capacitive turn-off behavior, independent of temperature. This makes it particularly suited for applications in hard switching conditions, such as Power Factor Correction (PFC).

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 20 A
VRRM Repetitive peak reverse voltage 650 V
Tj (max.) Maximum operating junction temperature 175 °C
VF (typ.) Forward voltage drop at IF = 20 A 1.30 V
IFRM Repetitive peak forward current 87 A (TO-220AC), 83 A (TO-220AC Ins) A
IFSM Surge non-repetitive forward current 90 A (tp = 10 ms, TC = 25 °C) A
Tstg Storage temperature range -55 to +175 °C
Rth(j-c) Junction to case thermal resistance 0.60 to 0.90 °C/W (TO-220AC), 1.60 to 2.50 °C/W (TO-220AC Ins) °C/W

Key Features

  • No reverse recovery charge in application current range.
  • Switching behavior independent of temperature.
  • Dedicated to PFC applications.
  • Insulated package (TO-220AC Ins) with insulated voltage of 2500 V rms and typical package capacitance of 7 pF.
  • High forward surge capability.
  • ECOPACK®2 compliant component.
  • Maximum operating junction temperature of 175 °C.

Applications

The STPSC20065D is especially suited for use in Power Factor Correction (PFC) applications due to its high performance and robustness in hard switching conditions. It is also suitable for other high-power applications requiring minimal recovery time and high reliability.

Q & A

  1. What is the maximum operating junction temperature of the STPSC20065D?

    The maximum operating junction temperature is 175 °C.

  2. What is the repetitive peak reverse voltage rating of the STPSC20065D?

    The repetitive peak reverse voltage rating is 650 V.

  3. What is the average forward current rating of the STPSC20065D?

    The average forward current rating is 20 A.

  4. Does the STPSC20065D have any reverse recovery charge?

    No, the STPSC20065D has no reverse recovery charge in its application current range.

  5. What is the typical forward voltage drop of the STPSC20065D at 20 A?

    The typical forward voltage drop at 20 A is 1.30 V.

  6. Is the STPSC20065D environmentally compliant?
  7. What are the package options available for the STPSC20065D?

    The package options include TO-220AC, TO-220AC Ins, and DO-247.

  8. What is the storage temperature range for the STPSC20065D?

    The storage temperature range is -55 to +175 °C.

  9. What is the surge non-repetitive forward current rating of the STPSC20065D?

    The surge non-repetitive forward current rating is 90 A for a 10 ms sinusoidal pulse at 25 °C.

  10. Is the STPSC20065D suitable for high-power applications?

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:300 µA @ 650 V
Capacitance @ Vr, F:1250pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$7.07
17

Please send RFQ , we will respond immediately.

Same Series
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number STPSC20065D STPSC20065DI STPSC20065DY STPSC20065W STPSC10065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 20A 20A 20A 20A 10A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 300 µA @ 650 V 300 µA @ 650 V 150 µA @ 600 V 300 µA @ 650 V 130 µA @ 650 V
Capacitance @ Vr, F 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 670pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Insulated, TO-220AC TO-220-2 DO-247-2 (Straight Leads) TO-220-2
Supplier Device Package TO-220AC TO-220AC ins TO-220AC DO-247 TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK