STPSC20065D
  • Share:

STMicroelectronics STPSC20065D

Manufacturer No:
STPSC20065D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 20A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC20065D is an ultra-high performance power Schottky silicon carbide (SiC) diode manufactured by STMicroelectronics. This diode is designed using a silicon carbide substrate, which allows for a 650 V rating and superior performance characteristics. The SiC material enables the diode to operate with no reverse recovery charge and minimal capacitive turn-off behavior, independent of temperature. This makes it particularly suited for applications in hard switching conditions, such as Power Factor Correction (PFC).

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 20 A
VRRM Repetitive peak reverse voltage 650 V
Tj (max.) Maximum operating junction temperature 175 °C
VF (typ.) Forward voltage drop at IF = 20 A 1.30 V
IFRM Repetitive peak forward current 87 A (TO-220AC), 83 A (TO-220AC Ins) A
IFSM Surge non-repetitive forward current 90 A (tp = 10 ms, TC = 25 °C) A
Tstg Storage temperature range -55 to +175 °C
Rth(j-c) Junction to case thermal resistance 0.60 to 0.90 °C/W (TO-220AC), 1.60 to 2.50 °C/W (TO-220AC Ins) °C/W

Key Features

  • No reverse recovery charge in application current range.
  • Switching behavior independent of temperature.
  • Dedicated to PFC applications.
  • Insulated package (TO-220AC Ins) with insulated voltage of 2500 V rms and typical package capacitance of 7 pF.
  • High forward surge capability.
  • ECOPACK®2 compliant component.
  • Maximum operating junction temperature of 175 °C.

Applications

The STPSC20065D is especially suited for use in Power Factor Correction (PFC) applications due to its high performance and robustness in hard switching conditions. It is also suitable for other high-power applications requiring minimal recovery time and high reliability.

Q & A

  1. What is the maximum operating junction temperature of the STPSC20065D?

    The maximum operating junction temperature is 175 °C.

  2. What is the repetitive peak reverse voltage rating of the STPSC20065D?

    The repetitive peak reverse voltage rating is 650 V.

  3. What is the average forward current rating of the STPSC20065D?

    The average forward current rating is 20 A.

  4. Does the STPSC20065D have any reverse recovery charge?

    No, the STPSC20065D has no reverse recovery charge in its application current range.

  5. What is the typical forward voltage drop of the STPSC20065D at 20 A?

    The typical forward voltage drop at 20 A is 1.30 V.

  6. Is the STPSC20065D environmentally compliant?
  7. What are the package options available for the STPSC20065D?

    The package options include TO-220AC, TO-220AC Ins, and DO-247.

  8. What is the storage temperature range for the STPSC20065D?

    The storage temperature range is -55 to +175 °C.

  9. What is the surge non-repetitive forward current rating of the STPSC20065D?

    The surge non-repetitive forward current rating is 90 A for a 10 ms sinusoidal pulse at 25 °C.

  10. Is the STPSC20065D suitable for high-power applications?

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:300 µA @ 650 V
Capacitance @ Vr, F:1250pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$7.07
17

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number STPSC20065D STPSC20065DI STPSC20065DY STPSC20065W STPSC10065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 20A 20A 20A 20A 10A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 300 µA @ 650 V 300 µA @ 650 V 150 µA @ 600 V 300 µA @ 650 V 130 µA @ 650 V
Capacitance @ Vr, F 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 670pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Insulated, TO-220AC TO-220-2 DO-247-2 (Straight Leads) TO-220-2
Supplier Device Package TO-220AC TO-220AC ins TO-220AC DO-247 TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN