STPSC20065D
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STMicroelectronics STPSC20065D

Manufacturer No:
STPSC20065D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 20A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC20065D is an ultra-high performance power Schottky silicon carbide (SiC) diode manufactured by STMicroelectronics. This diode is designed using a silicon carbide substrate, which allows for a 650 V rating and superior performance characteristics. The SiC material enables the diode to operate with no reverse recovery charge and minimal capacitive turn-off behavior, independent of temperature. This makes it particularly suited for applications in hard switching conditions, such as Power Factor Correction (PFC).

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 20 A
VRRM Repetitive peak reverse voltage 650 V
Tj (max.) Maximum operating junction temperature 175 °C
VF (typ.) Forward voltage drop at IF = 20 A 1.30 V
IFRM Repetitive peak forward current 87 A (TO-220AC), 83 A (TO-220AC Ins) A
IFSM Surge non-repetitive forward current 90 A (tp = 10 ms, TC = 25 °C) A
Tstg Storage temperature range -55 to +175 °C
Rth(j-c) Junction to case thermal resistance 0.60 to 0.90 °C/W (TO-220AC), 1.60 to 2.50 °C/W (TO-220AC Ins) °C/W

Key Features

  • No reverse recovery charge in application current range.
  • Switching behavior independent of temperature.
  • Dedicated to PFC applications.
  • Insulated package (TO-220AC Ins) with insulated voltage of 2500 V rms and typical package capacitance of 7 pF.
  • High forward surge capability.
  • ECOPACK®2 compliant component.
  • Maximum operating junction temperature of 175 °C.

Applications

The STPSC20065D is especially suited for use in Power Factor Correction (PFC) applications due to its high performance and robustness in hard switching conditions. It is also suitable for other high-power applications requiring minimal recovery time and high reliability.

Q & A

  1. What is the maximum operating junction temperature of the STPSC20065D?

    The maximum operating junction temperature is 175 °C.

  2. What is the repetitive peak reverse voltage rating of the STPSC20065D?

    The repetitive peak reverse voltage rating is 650 V.

  3. What is the average forward current rating of the STPSC20065D?

    The average forward current rating is 20 A.

  4. Does the STPSC20065D have any reverse recovery charge?

    No, the STPSC20065D has no reverse recovery charge in its application current range.

  5. What is the typical forward voltage drop of the STPSC20065D at 20 A?

    The typical forward voltage drop at 20 A is 1.30 V.

  6. Is the STPSC20065D environmentally compliant?
  7. What are the package options available for the STPSC20065D?

    The package options include TO-220AC, TO-220AC Ins, and DO-247.

  8. What is the storage temperature range for the STPSC20065D?

    The storage temperature range is -55 to +175 °C.

  9. What is the surge non-repetitive forward current rating of the STPSC20065D?

    The surge non-repetitive forward current rating is 90 A for a 10 ms sinusoidal pulse at 25 °C.

  10. Is the STPSC20065D suitable for high-power applications?

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:300 µA @ 650 V
Capacitance @ Vr, F:1250pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC20065D STPSC20065DI STPSC20065DY STPSC20065W STPSC10065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 20A 20A 20A 20A 10A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 20 A 1.45 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 300 µA @ 650 V 300 µA @ 650 V 150 µA @ 600 V 300 µA @ 650 V 130 µA @ 650 V
Capacitance @ Vr, F 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 1250pF @ 0V, 1MHz 670pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Insulated, TO-220AC TO-220-2 DO-247-2 (Straight Leads) TO-220-2
Supplier Device Package TO-220AC TO-220AC ins TO-220AC DO-247 TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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