Overview
The STPSC10065DY is a high-performance silicon carbide (SiC) Schottky diode manufactured by STMicroelectronics. This 10 A, 650 V diode is designed to offer ultra-high performance, particularly in power factor correction (PFC) applications and other high-frequency switching environments. The SiC substrate allows for a wide band gap material, enabling the diode to operate with minimal reverse recovery and negligible ringing patterns, making it ideal for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VRRM (Repetitive peak reverse voltage) | 650 | V |
| IF(AV) (Average forward current) | 10 | A |
| IFRM (Repetitive peak forward current) | 42 | A |
| IFSM (Surge non-repetitive forward current) | 48 (tp = 10 ms, Tc = 25 °C) | A |
| Tj (Operating junction temperature) | -40 to +175 | °C |
| Tstg (Storage temperature range) | -65 to +175 | °C |
| VF (typ.) (Forward voltage drop) | 1.30 (Tj = 25 °C, IF = 10 A) | V |
| Rth(j-c) (Junction to case thermal resistance) | 1.0 to 1.5 | °C/W |
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- Operating junction temperature range from -40 °C to 175 °C
- ECOPACK2 compliant component
- D²PAK HV package with a creepage distance (anode to cathode) of 5.38 mm min.
Applications
- DC/DC converters
- High frequency inverters
- Snubbers
- Boost PFC functions
- Charging stations for electric vehicles (EV) and hybrid electric vehicles (HEV)
- Solar energy conversion systems
Q & A
- What is the maximum repetitive peak reverse voltage of the STPSC10065DY?
The maximum repetitive peak reverse voltage is 650 V. - What is the average forward current rating of the STPSC10065DY?
The average forward current rating is 10 A. - What is the typical forward voltage drop at 25 °C and 10 A?
The typical forward voltage drop is 1.30 V. - What is the operating junction temperature range of the STPSC10065DY?
The operating junction temperature range is from -40 °C to 175 °C. - Is the STPSC10065DY suitable for high-frequency applications?
Yes, it is suitable for high-frequency applications due to its minimal reverse recovery and negligible ringing patterns. - What package types are available for the STPSC10065DY?
The diode is available in TO-220AC and D²PAK HV packages. - What is the creepage distance between the anode and cathode in the D²PAK HV package?
The minimum creepage distance is 5.38 mm. - Is the STPSC10065DY environmentally compliant?
Yes, it is ECOPACK2 compliant. - What are some typical applications of the STPSC10065DY?
Typical applications include DC/DC converters, high frequency inverters, snubbers, and boost PFC functions. - How does the SiC substrate benefit the performance of the STPSC10065DY?
The SiC substrate allows for a wide band gap material, enabling the diode to operate with minimal reverse recovery and negligible ringing patterns, which enhances its performance in high-frequency switching environments.
