BAT43-TAP
  • Share:

Vishay General Semiconductor - Diodes Division BAT43-TAP

Manufacturer No:
BAT43-TAP
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 30V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT43-TAP is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is known for its very low turn-on voltage and fast guard ring protection against excessive voltage, such as electrostatic discharges. The BAT43-TAP is packaged in a DO-35 (DO-204AH) case, making it suitable for a variety of electronic circuits requiring efficient rectification and switching.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)30V
Forward Continuous Current (IF)200mA
Repetitive Peak Forward Current (IFRM)500mA
Surge Forward Current (IFSM)4A
Power Dissipation (Ptot)200mW
Thermal Resistance Junction to Ambient Air (RthJA)300K/W
Junction Temperature (Tj)125°C
Ambient Operating Temperature Range (Tamb)-65 to +125°C
Storage Temperature Range (Tstg)-65 to +150°C
Reverse Breakdown Voltage (V(BR))30V
Leakage Current (IR) at VR = 25 V0.5 μAμA
Forward Voltage (VF) at IF = 200 mA330 mVmV
Diode Capacitance (CD) at VR = 1 V, f = 1 MHz7 pFpF
Reverse Recovery Time (trr)5 nsns

Key Features

  • Very low turn-on voltage, making it ideal for low-voltage applications.
  • Fast guard ring protection against excessive voltage, such as electrostatic discharges.
  • Available in DO-35 (DO-204AH) package, suitable for through-hole mounting.
  • High rectification efficiency with a low forward voltage drop.
  • Low diode capacitance, which is beneficial for high-frequency applications.
  • Wide operating temperature range from -65°C to +125°C.

Applications

The BAT43-TAP Schottky diode is versatile and can be used in various applications, including:

  • General-purpose rectification and switching circuits.
  • Polarity protection in electronic devices.
  • Signal switching and detection in high-frequency circuits.
  • Automotive, industrial, and consumer electronics where low-voltage and high-efficiency rectification are required.

Q & A

  1. What is the repetitive peak reverse voltage of the BAT43-TAP?
    The repetitive peak reverse voltage (VRRM) of the BAT43-TAP is 30 V.
  2. What is the maximum forward continuous current for the BAT43-TAP?
    The maximum forward continuous current (IF) for the BAT43-TAP is 200 mA.
  3. What is the surge forward current rating of the BAT43-TAP?
    The surge forward current (IFSM) rating of the BAT43-TAP is 4 A.
  4. What is the thermal resistance junction to ambient air for the BAT43-TAP?
    The thermal resistance junction to ambient air (RthJA) for the BAT43-TAP is 300 K/W.
  5. What is the junction temperature limit for the BAT43-TAP?
    The junction temperature (Tj) limit for the BAT43-TAP is 125°C.
  6. What is the storage temperature range for the BAT43-TAP?
    The storage temperature range (Tstg) for the BAT43-TAP is -65°C to +150°C.
  7. What is the typical forward voltage drop at 200 mA for the BAT43-TAP?
    The typical forward voltage drop (VF) at 200 mA for the BAT43-TAP is 330 mV.
  8. What is the diode capacitance of the BAT43-TAP at 1 V and 1 MHz?
    The diode capacitance (CD) of the BAT43-TAP at 1 V and 1 MHz is 7 pF.
  9. What is the reverse recovery time of the BAT43-TAP?
    The reverse recovery time (trr) of the BAT43-TAP is 5 ns.
  10. In what package is the BAT43-TAP available?
    The BAT43-TAP is available in a DO-35 (DO-204AH) package.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:450 mV @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:7pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.40
1,148

Please send RFQ , we will respond immediately.

Same Series
BAT42-TR
BAT42-TR
DIODE SCHOTTKY 30V 200MA DO35
BAT43-TAP
BAT43-TAP
DIODE SCHOTTKY 30V 200MA DO35
BAT43-TR
BAT43-TR
DIODE SCHOTTKY 30V 200MA DO35

Similar Products

Part Number BAT43-TAP BAT46-TAP BAT41-TAP BAT42-TAP
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 100 V 100 V 30 V
Current - Average Rectified (Io) 200mA (DC) 150mA (DC) 100mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 450 mV @ 15 mA 1 V @ 250 mA 1 V @ 200 mA 650 mV @ 50 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns - - 5 ns
Current - Reverse Leakage @ Vr 500 nA @ 25 V 5 µA @ 75 V 100 nA @ 100 V 500 nA @ 25 V
Capacitance @ Vr, F 7pF @ 1V, 1MHz 6pF @ 1V, 1MHz 2pF @ 1V, 1MHz 7pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH)
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK

Related Product By Brand

SM6T68CA-M3/52
SM6T68CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
1N4148W-HE3-08
1N4148W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
1N4007GPEHE3/91
1N4007GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX84C16-HE3-08
BZX84C16-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3