BAT43-TAP
  • Share:

Vishay General Semiconductor - Diodes Division BAT43-TAP

Manufacturer No:
BAT43-TAP
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 30V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT43-TAP is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is known for its very low turn-on voltage and fast guard ring protection against excessive voltage, such as electrostatic discharges. The BAT43-TAP is packaged in a DO-35 (DO-204AH) case, making it suitable for a variety of electronic circuits requiring efficient rectification and switching.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)30V
Forward Continuous Current (IF)200mA
Repetitive Peak Forward Current (IFRM)500mA
Surge Forward Current (IFSM)4A
Power Dissipation (Ptot)200mW
Thermal Resistance Junction to Ambient Air (RthJA)300K/W
Junction Temperature (Tj)125°C
Ambient Operating Temperature Range (Tamb)-65 to +125°C
Storage Temperature Range (Tstg)-65 to +150°C
Reverse Breakdown Voltage (V(BR))30V
Leakage Current (IR) at VR = 25 V0.5 μAμA
Forward Voltage (VF) at IF = 200 mA330 mVmV
Diode Capacitance (CD) at VR = 1 V, f = 1 MHz7 pFpF
Reverse Recovery Time (trr)5 nsns

Key Features

  • Very low turn-on voltage, making it ideal for low-voltage applications.
  • Fast guard ring protection against excessive voltage, such as electrostatic discharges.
  • Available in DO-35 (DO-204AH) package, suitable for through-hole mounting.
  • High rectification efficiency with a low forward voltage drop.
  • Low diode capacitance, which is beneficial for high-frequency applications.
  • Wide operating temperature range from -65°C to +125°C.

Applications

The BAT43-TAP Schottky diode is versatile and can be used in various applications, including:

  • General-purpose rectification and switching circuits.
  • Polarity protection in electronic devices.
  • Signal switching and detection in high-frequency circuits.
  • Automotive, industrial, and consumer electronics where low-voltage and high-efficiency rectification are required.

Q & A

  1. What is the repetitive peak reverse voltage of the BAT43-TAP?
    The repetitive peak reverse voltage (VRRM) of the BAT43-TAP is 30 V.
  2. What is the maximum forward continuous current for the BAT43-TAP?
    The maximum forward continuous current (IF) for the BAT43-TAP is 200 mA.
  3. What is the surge forward current rating of the BAT43-TAP?
    The surge forward current (IFSM) rating of the BAT43-TAP is 4 A.
  4. What is the thermal resistance junction to ambient air for the BAT43-TAP?
    The thermal resistance junction to ambient air (RthJA) for the BAT43-TAP is 300 K/W.
  5. What is the junction temperature limit for the BAT43-TAP?
    The junction temperature (Tj) limit for the BAT43-TAP is 125°C.
  6. What is the storage temperature range for the BAT43-TAP?
    The storage temperature range (Tstg) for the BAT43-TAP is -65°C to +150°C.
  7. What is the typical forward voltage drop at 200 mA for the BAT43-TAP?
    The typical forward voltage drop (VF) at 200 mA for the BAT43-TAP is 330 mV.
  8. What is the diode capacitance of the BAT43-TAP at 1 V and 1 MHz?
    The diode capacitance (CD) of the BAT43-TAP at 1 V and 1 MHz is 7 pF.
  9. What is the reverse recovery time of the BAT43-TAP?
    The reverse recovery time (trr) of the BAT43-TAP is 5 ns.
  10. In what package is the BAT43-TAP available?
    The BAT43-TAP is available in a DO-35 (DO-204AH) package.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:450 mV @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:7pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.40
1,148

Please send RFQ , we will respond immediately.

Same Series
BAT42-TR
BAT42-TR
DIODE SCHOTTKY 30V 200MA DO35
BAT42-TAP
BAT42-TAP
DIODE SCHOTTKY 30V 200MA DO35
BAT43-TR
BAT43-TR
DIODE SCHOTTKY 30V 200MA DO35

Similar Products

Part Number BAT43-TAP BAT46-TAP BAT41-TAP BAT42-TAP
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 100 V 100 V 30 V
Current - Average Rectified (Io) 200mA (DC) 150mA (DC) 100mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 450 mV @ 15 mA 1 V @ 250 mA 1 V @ 200 mA 650 mV @ 50 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns - - 5 ns
Current - Reverse Leakage @ Vr 500 nA @ 25 V 5 µA @ 75 V 100 nA @ 100 V 500 nA @ 25 V
Capacitance @ Vr, F 7pF @ 1V, 1MHz 6pF @ 1V, 1MHz 2pF @ 1V, 1MHz 7pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH)
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

SM6T10AHE3_A/H
SM6T10AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T100A-E3/5B
SM6T100A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM15T30A-M3/57T
SM15T30A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T39AHE3/52
SM6T39AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T12AHE3_A/H
SM15T12AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T200AHM3/H
SM15T200AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
BAW56-E3-08
BAW56-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BAT54WS-HE3-08
BAT54WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BZX384C16-HE3-08
BZX384C16-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323
BZX84B18-E3-08
BZX84B18-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384B3V0-HE3-18
BZX384B3V0-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323