BC848BW RFG
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Taiwan Semiconductor Corporation BC848BW RFG

Manufacturer No:
BC848BW RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848BW RFG is a bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation. This NPN transistor is designed for general-purpose applications and is known for its reliability and performance in a variety of electronic circuits. The BC848BW RFG is packaged in a surface-mount SOT-323 format, making it suitable for modern PCB designs that require compact components.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Breakdown Voltage VCBO 30 V
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V
Emitter-Base Breakdown Voltage VEBO 5 V
Collector Current IC 0.1 A
Peak Collector Current ICM 0.2 A
Power Dissipation PD 200 mW
Junction Temperature Range TJ -55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
Transition Frequency fT 100 MHz
DC Current Gain hFE 200 - 450 -
Collector-Emitter Saturation Voltage VCE(sat) 0.25 - 0.60 V
Base Emitter Voltage VBE 0.58 - 0.77 V
Package Type - SOT-323 -

Key Features

  • General Purpose NPN Transistor: Suitable for a wide range of applications including amplifiers, switches, and voltage regulators.
  • High Transition Frequency: 100 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: Surface-mount SOT-323 package, ideal for modern PCB designs requiring minimal space.
  • Reliable Performance: Robust electrical specifications ensure consistent performance across various operating conditions.
  • Halogen-Free: The 'RFG' suffix indicates that the component is made with halogen-free materials, which is beneficial for environmental and health considerations.

Applications

  • Amplifiers and Switches: The BC848BW RFG can be used in various amplifier and switching circuits due to its high current gain and low saturation voltage.
  • Voltage Regulators: It can be employed in voltage regulator circuits to provide stable output voltages.
  • Audio and RF Circuits: Its high transition frequency makes it suitable for audio and RF applications.
  • Automotive and Industrial Electronics: The transistor's robust specifications and compact packaging make it a good choice for automotive and industrial electronic systems.

Q & A

  1. What is the collector-base breakdown voltage of the BC848BW RFG?

    The collector-base breakdown voltage (VCBO) is 30 V.

  2. What is the maximum collector current for the BC848BW RFG?

    The maximum collector current (IC) is 0.1 A.

  3. What is the transition frequency of the BC848BW RFG?

    The transition frequency (fT) is 100 MHz.

  4. What is the package type of the BC848BW RFG?

    The package type is SOT-323.

  5. Is the BC848BW RFG halogen-free?
  6. What is the typical DC current gain (hFE) of the BC848BW RFG?

    The typical DC current gain (hFE) is between 200 and 450.

  7. What are the junction and storage temperature ranges for the BC848BW RFG?

    The junction temperature range is -55 to +150°C, and the storage temperature range is also -55 to +150°C.

  8. Can the BC848BW RFG be used in high-frequency applications?
  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BC848BW RFG?

    The collector-emitter saturation voltage (VCE(sat)) ranges from 0.25 to 0.60 V.

  10. What are some common applications of the BC848BW RFG?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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In Stock

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Similar Products

Part Number BC848BW RFG BC848CW RFG BC849BW RFG BC848AW RFG BC848B RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-23

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