BC848B RFG
  • Share:

Taiwan Semiconductor Corporation BC848B RFG

Manufacturer No:
BC848B RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848B RFG is a bipolar junction transistor (BJT) produced by Taiwan Semiconductor Corporation. It is an NPN type transistor, packaged in the SOT-23 format, making it suitable for surface mount applications. This transistor is designed for general-purpose use, particularly in small signal amplifier circuits and audio frequency applications.

Key Specifications

ParameterValueUnit
Package CodeTO-236AB (SOT-23)-
Number of Terminals3-
PolarityNPN-
Collector Power Dissipation (PC)0.2W
Collector-Emitter Voltage (VCEO)30V
Collector Current (IC)0.1A
DC Current Gain (hFE)200 to 450-
Transition Frequency (fT)100MHz
Storage Temperature (TSTG)-55 to +150°C
Package Size2.9x2.4 (t=1.2)mm

Key Features

  • Low power loss and high efficiency.
  • Ideal for automated placement due to its SOT-23 package.
  • High surge current capability.
  • Moisture sensitivity level: level 1.
  • Collector-Emitter voltage (VCEO) of 30V, making it suitable for a variety of applications.
  • DC current gain (hFE) ranging from 200 to 450.

Applications

The BC848B RFG transistor is widely used in small signal amplifier circuits, particularly in audio frequency applications. It is also suitable for general-purpose use in electronic devices requiring low power and high efficiency. Additionally, its compact SOT-23 package makes it ideal for surface mount technology (SMT) in various electronic assemblies.

Q & A

  1. What is the package type of the BC848B RFG transistor?
    The BC848B RFG transistor is packaged in the SOT-23 format.
  2. What is the collector-emitter voltage (VCEO) of the BC848B RFG transistor?
    The collector-emitter voltage (VCEO) is 30V.
  3. What is the maximum collector current (IC) of the BC848B RFG transistor?
    The maximum collector current (IC) is 0.1 A.
  4. What is the DC current gain (hFE) range of the BC848B RFG transistor?
    The DC current gain (hFE) ranges from 200 to 450.
  5. What is the transition frequency (fT) of the BC848B RFG transistor?
    The transition frequency (fT) is 100 MHz.
  6. What are the storage temperature limits for the BC848B RFG transistor?
    The storage temperature limits are -55°C to +150°C.
  7. Is the BC848B RFG transistor suitable for surface mount technology (SMT)?
    Yes, the BC848B RFG transistor is suitable for SMT due to its SOT-23 package.
  8. What are some common applications of the BC848B RFG transistor?
    The BC848B RFG transistor is commonly used in small signal amplifier circuits and audio frequency applications.
  9. Does the BC848B RFG transistor have high surge current capability?
    Yes, the BC848B RFG transistor has high surge current capability.
  10. What is the moisture sensitivity level of the BC848B RFG transistor?
    The moisture sensitivity level is level 1.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.03
22,932

Please send RFQ , we will respond immediately.

Same Series
BC847B RFG
BC847B RFG
TRANS NPN 45V 0.1A SOT23
BC846B RFG
BC846B RFG
TRANS NPN 65V 0.1A SOT23
BC846A RFG
BC846A RFG
TRANS NPN 65V 0.1A SOT23
BC847C RFG
BC847C RFG
TRANS NPN 45V 0.1A SOT23
BC848A RFG
BC848A RFG
TRANS NPN 30V 0.1A SOT23
BC848B RFG
BC848B RFG
TRANS NPN 30V 0.1A SOT23
BC848C RFG
BC848C RFG
TRANS NPN 30V 0.1A SOT23

Similar Products

Part Number BC848B RFG BC848C RFG BC848BW RFG BC848A RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 500mV @ 5mA, 100mA 600mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23 SOT-323 SOT-23

Related Product By Categories

PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

1.5KE120A R0G
1.5KE120A R0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR420SHR7G
MUR420SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B22 L0G
BZV55B22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B3V0 L0G
BZV55B3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZX585B6V8 RSG
BZX585B6V8 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZV55B30 L1G
BZV55B30 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX585B9V1 RKG
BZX585B9V1 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323