BC847A RFG
  • Share:

Taiwan Semiconductor Corporation BC847A RFG

Manufacturer No:
BC847A RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847A RFG is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation. It is designed for a wide range of applications, including switching and amplification. The transistor is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage, Emitter Open VCBO 50 V
Collector-Emitter Voltage, Base Open VCEO 45 V
Emitter-Base Voltage, Collector Open VEBO 6 V
Collector Current, DC IC 0.1 A
Junction Temperature TJ -55 to +150 °C
Storage Temperature TSTG -55 to +150 °C
Power Dissipation PD 200 mW
DC Current Gain hFE 110 to 220 -
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V
Base-Emitter Saturation Voltage VBE(sat) -1.1 V
Transition Frequency fT 100 MHz

Key Features

  • Low power loss, high efficiency
  • Ideal for automated placement due to its SOT23 package
  • High surge current capability
  • Moisture sensitivity level: level 1
  • Halogen-free (indicated by 'RFG' suffix)
  • Three different gain selections available (A, B, C)

Applications

The BC847A RFG transistor is versatile and can be used in various applications, including:

  • General-purpose switching and amplification
  • Automotive systems (AEC-Q101 qualified)
  • Industrial and consumer electronics
  • Mobile and wearable devices
  • Power and computing applications

Q & A

  1. What is the collector-base voltage of the BC847A transistor?

    The collector-base voltage (VCBO) of the BC847A transistor is 50 V.

  2. What is the maximum collector current of the BC847A transistor?

    The maximum collector current (IC) of the BC847A transistor is 0.1 A.

  3. What is the junction temperature range of the BC847A transistor?

    The junction temperature range of the BC847A transistor is -55°C to +150°C.

  4. What is the power dissipation of the BC847A transistor?

    The power dissipation (PD) of the BC847A transistor is 200 mW.

  5. What are the gain selections available for the BC847A transistor?

    The BC847A transistor is available in three different gain selections: A, B, and C.

  6. Is the BC847A transistor suitable for automotive applications?
  7. What package type is used for the BC847A transistor?

    The BC847A transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  8. Is the BC847A RFG transistor halogen-free?
  9. What is the transition frequency of the BC847A transistor?

    The transition frequency (fT) of the BC847A transistor is 100 MHz.

  10. What are the typical applications of the BC847A transistor?

    The BC847A transistor is used in general-purpose switching and amplification, as well as in automotive, industrial, and consumer electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.03
8,987

Please send RFQ , we will respond immediately.

Same Series
BC847B RFG
BC847B RFG
TRANS NPN 45V 0.1A SOT23
BC846B RFG
BC846B RFG
TRANS NPN 65V 0.1A SOT23
BC846A RFG
BC846A RFG
TRANS NPN 65V 0.1A SOT23
BC847C RFG
BC847C RFG
TRANS NPN 45V 0.1A SOT23
BC848A RFG
BC848A RFG
TRANS NPN 30V 0.1A SOT23
BC848B RFG
BC848B RFG
TRANS NPN 30V 0.1A SOT23
BC848C RFG
BC848C RFG
TRANS NPN 30V 0.1A SOT23

Similar Products

Part Number BC847A RFG BC847B RFG BC847AW RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 500mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-23 SOT-323

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB

Related Product By Brand

BAT54S RFG
BAT54S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT23
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR160SH
MUR160SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4001GHR0G
1N4001GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BC807-25 RFG
BC807-25 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC847A RFG
BC847A RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323