PMZB290UN,315
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Nexperia USA Inc. PMZB290UN,315

Manufacturer No:
PMZB290UN,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 1A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PMZB290UN,315 is a single N-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed for high-performance applications, leveraging Trench MOSFET technology to offer fast switching and low threshold voltage. It is packaged in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained designs. The device is suitable for various applications across automotive, industrial, and consumer electronics due to its robust and efficient characteristics.

Key Specifications

Parameter Value Unit
Type N-channel enhancement mode Field-Effect Transistor (FET)
Package DFN1006B-3 (SOT883B)
VDS (max) 20 V
VGS (max) ±8 V
RDSon (max) @ VGS = 4.5 V 350
RDSon (max) @ VGS = 2.5 V 450
Tj (max) 150 °C
ID (max) @ 25°C 1 A
QGD (typ) 0.18 nC
QG(tot) (typ) @ VGS = 4.5 V 0.89 nC
Ptot (max) 0.36 W (Ta), 2.7 W (Tc) W
VGSth (typ) 950 mV @ 250 µA V
Ciss (typ) 45 pF pF
Coss (typ) 11 pF pF
ESD Protection 2 kV HBM

Key Features

  • Fast Switching: The PMZB290UN,315 offers fast switching capabilities, making it suitable for high-speed applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • Low Threshold Voltage: Features a low threshold voltage, which enhances the device's switching characteristics.
  • Ultra Thin Package Profile: Packaged in a leadless ultra small DFN1006B-3 (SOT883B) package with a height of 0.37 mm, ideal for space-constrained designs.
  • ESD Protection: Provides 2 kV HBM ElectroStatic Discharge (ESD) protection, ensuring robustness against static discharge.

Applications

  • Relay Driver: Suitable for driving relays in various applications.
  • High-Speed Line Driver: Ideal for high-speed line driving due to its fast switching capabilities.
  • Low-Side Load Switch: Can be used as a low-side load switch in power management circuits.
  • Switching Circuits: Applicable in various switching circuits requiring fast and efficient switching.
  • Automotive and Industrial: Used in automotive and industrial applications due to its robust and reliable performance.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMZB290UN,315?

    The maximum drain-source voltage (VDS) is 20 V.

  2. What is the maximum gate-source voltage (VGS) for the PMZB290UN,315?

    The maximum gate-source voltage (VGS) is ±8 V.

  3. What is the typical threshold voltage (VGSth) of the PMZB290UN,315?

    The typical threshold voltage (VGSth) is 950 mV at 250 µA.

  4. What is the maximum on-resistance (RDSon) at VGS = 4.5 V?

    The maximum on-resistance (RDSon) at VGS = 4.5 V is 350 mΩ.

  5. What is the maximum continuous drain current (ID) at 25°C?

    The maximum continuous drain current (ID) at 25°C is 1 A.

  6. What is the maximum junction temperature (Tj) for the PMZB290UN,315?

    The maximum junction temperature (Tj) is 150°C.

  7. Does the PMZB290UN,315 have ESD protection?

    Yes, it has 2 kV HBM ElectroStatic Discharge (ESD) protection.

  8. What is the package type of the PMZB290UN,315?

    The package type is DFN1006B-3 (SOT883B), a leadless ultra small package.

  9. What are some common applications of the PMZB290UN,315?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and various switching circuits.

  10. Is the PMZB290UN,315 suitable for automotive applications?

    Yes, it is suitable for automotive and industrial applications due to its robust performance.

  11. Where can I find more detailed technical information about the PMZB290UN,315?

    You can find detailed technical information in the datasheet available on Nexperia's official website or through authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
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Same Series
PMZB290UN,315
PMZB290UN,315
MOSFET N-CH 20V 1A DFN1006B-3

Similar Products

Part Number PMZB290UN,315 PMZB290UNE,315
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 10 V 83 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case 3-XFDFN SC-101, SOT-883

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