NTLJF4156NTAG
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onsemi NTLJF4156NTAG

Manufacturer No:
NTLJF4156NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 2.5A 6WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NTLJF4156NTAG is a single N-channel MOSFET produced by onsemi, designed for compact and efficient designs. It is housed in a 6-WDFN (2x2) package, making it suitable for applications where space is limited. This MOSFET is part of onsemi's portfolio of power management solutions, offering high performance and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Drain Current)2.5 A (Tj), 3.7 A (Ta)
PD (Power Dissipation)710 mW (Ta)
RDS(ON) (On-Resistance)12 mΩ (typical at VGS = 10 V)
Package6-WDFN (2x2 mm)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 12 mΩ (typical at VGS = 10 V), reducing power losses.
  • Compact 6-WDFN (2x2 mm) package, ideal for space-constrained designs.
  • High drain current capability of up to 3.7 A.
  • Integrated Schottky diode for improved efficiency and reduced switching losses.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The NTLJF4156NTAG MOSFET is suitable for a variety of applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power management in consumer electronics and industrial equipment.
  • Automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the NTLJF4156NTAG MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance of the NTLJF4156NTAG?
    The typical on-resistance (RDS(ON)) is 12 mΩ at VGS = 10 V.
  3. What is the package type of the NTLJF4156NTAG?
    The package type is 6-WDFN (2x2 mm).
  4. What is the maximum drain current of the NTLJF4156NTAG?
    The maximum drain current (ID) is 2.5 A (Tj) and 3.7 A (Ta).
  5. Does the NTLJF4156NTAG have an integrated Schottky diode?
    Yes, it has an integrated Schottky diode for improved efficiency.
  6. What is the operating temperature range of the NTLJF4156NTAG?
    The operating temperature range is from -55°C to 150°C.
  7. What are some common applications of the NTLJF4156NTAG?
    Common applications include DC-DC converters, motor control systems, power management in consumer electronics, and automotive systems.
  8. Where can I find detailed specifications and datasheets for the NTLJF4156NTAG?
    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Digi-Key, Mouser, and Farnell.
  9. Is the NTLJF4156NTAG suitable for high-power applications?
    Yes, it is designed for high-power applications due to its high drain current and low on-resistance.
  10. What is the power dissipation capability of the NTLJF4156NTAG?
    The power dissipation (PD) is 710 mW at ambient temperature (Ta).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:427 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):710mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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Same Series
NTLJF4156NTAG
NTLJF4156NTAG
MOSFET N-CH 30V 2.5A 6WDFN

Similar Products

Part Number NTLJF4156NTAG NTLJF4156NT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tj) 2.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 4.5V 70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 4.5 V 6.5 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 427 pF @ 15 V 427 pF @ 15 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 710mW (Ta) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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